LTV844S-V - Lite-On Technology Corporation

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

FEATURES

1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option.

2. Applicable Models (Business dealing name)

* Dual-in-line package :

LTV814-V : 1-channel type / LTV824-V : 2-channel type /

LTV844-V : 4-channel type

* Wide lead spacing package :

LTV814M-V : 1-channel type / LTV824M-V : 2-channel type /

LTV844M-V : 4-channel type

* Surface mounting package :

LTV814S-V : 1-channel type / LTV824S-V : 2-channel type /

LTV844S-V : 4-channel type

* Tape and reel packaging :

LTV814STA1-V, LTV824STA1-V

3. The relevant models are the models Approved by VDE

according to DIN VDE 0884:1992-06

Approved Model No.: LTV-814 / LTV-824 / LTV-844 / LTV-814M / LTV-824M /

LTV-844M / LTV-814S / LTV-824S / LTV-844S

VDE approved No.: 094722

(According to the specification DIN VDE 0884:1992-06)

* Operating isolation voltage VIORM : 850V (Peak)

* Transient voltage VTR : 6000V (Peak)

* Pollution : 2 (According to VDE 0110-1 : 1997-04)

* Clearances distance (Between input and output) : 7.0mm (MIN.)

* Creepage distance (Between input and output) : 7.0mm (MIN.)

* Isolation thickness between input and output : 0.4mm (MIN.)

* Safety limit values Current (Isi) : 400mA (Diode side)

Power (Psi) : 700mW (Phototransistor side)

Temperature(Tsi) : 175oC

In order to keep safety electric isolation of photocoupler, please set the protective

circuit to keep within safety limit values when the actual application equipment

troubled.

* I ndication of VDE 0884 approval prints "4" for 4-pin and " " for 8 & 16 pin on sleeve

package.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 1 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV814-V :

LTV824-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 2 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV844-V :

LTV814M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 3 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV824M-V :

LTV844M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 4 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV814S-V :

LTV824S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 5 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV844S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 6 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

TAPING DIMENSIONS

LTV814STA1-V :

LTV824STA1-V :

Description Symbol Dimensions in mm ( inches )

Tape wide W 16 ± 0.3 ( .63 )

Pitch of sprocket holes P0 4 ± 0.1 ( .15 )

Distance of compartment F

P2 7.5 ± 0.1 ( .295 )

2 ± 0.1 ( .079 )

Distance of compartment to compartment P1 12 ± 0.1 ( .472 )

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 7 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ABSOLUTE MAXIMUM RATING

( Ta = 25°C )

PARAMETER SYMBOL RATING UNIT

Forward Current IF ±50 mA

INPUT Power Dissipation P 70 mW

Collector - Emitter Voltage VCEO 35 V

Emitter - Collector Voltage VECO 6 V

Collector Current IC 50 mA

OUTPUT

Collector P ower Dissipation PC 150 mW

T otal Power Dissipation Ptot 200 mW

*1 Isolation Voltage Viso 5,000 Vrms

Operating Temperature Topr -30 ~ +100 °C

Storage Temperature Tstg -55 ~ +125 °C

*2 Soldering Temperature Tsol 260 °C

*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and

emitter on the secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 8 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ELECTRICAL - OPTICAL CHARACTERISTICS

( Ta = 25°C )

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

Forward Voltage VF — 1.2 1.4 V

IF=±20mA

INPUT Terminal Capacitance Ct — 50 250 pF V=0, f=1KHz

Collector Dark Current ICEO — — 100 nA VCE=20V, IF=0

Collector-Emitter

Breakd own Voltage BVCEO 35 — — V

IC=0.1mA

IF=0

OUTPUT

Emitter-Collector

Breakd own Voltage BVECO 6 — — V

IE=10µA

IF=0

Collector Current IC 0.2 — 3 mA

* Current Transfer Ratio CTR 20 — 300 %

IF=±1mA

VCE=5V

Collector-Emitter

Saturation Voltage VCE(sat) — 0.1 0.2 V

IF=±20mA

IC=1mA

Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V

40 ~ 60% R.H.

Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz

Cut-Off Frequency fc 15 80 — kHz

VCE=5V, IC=2mA

RL=100Ω, -3dB

Response Time (Rise) tr — 4 18

µs

TRANSFER

CHARACTERISTICS

Response Time (Fall) tf — 3 18

µs

VCE=2V, IC=2mA

RL=100Ω

* CTR I

I100%

C

F

=×

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 9 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

RANK TABLE OF CURRENT TRANSFER RATIO CTR

MODEL NO. RANK MARK CTR ( % )

A 50 ~ 150

LTV-814 A or No mark 20 ~ 300

CONDITIONS

IF = ±1 mA

VCE = 5 V

Ta = 25 °C

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 10 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ISOLATION SPECIFICATION ACCORDING TO VDE 0884

Parameter Symbol Conditions Rating Unit Remark

Class of environmental test - DIN IEC68 30/100/21 -

Pollution - DIN VDE0110 2 -

Maximum Operati ng

Isolation Voltage VIORM - 850 VPEAK

Diagram 1 tp=60s, qc<5pC 1275 VPEAK

Partial Discharge Test

Voltage (Between

Input and Output) Diagram 2 Vpr tp=1s, qc<5pC 1594 VPEAK

Maximum Over-voltage VINITIAL tINI = 10s 6000 VPEAK

Refer to the

Diagram 1, 2

Safety Maximum Ratings

1) Case Temperature Tsi IF = 0, Pc = 0 130 oC

2) Input Current Isi Pc=0 55 mA

3) Electric Power (Output or

Total Power Issipation) Psi - 160 mW

Refer to the

Figure 1, 3

Ta=Tsi MIN.109

Ta=Topr(MAX.) MIN.1011

Isolation Resistance

(Test Voltage Between

Input and Output : DC500V) RISO

Ta=25 oC MIN.1012

Ω

Precautions in performing isolation test

* Partial discharge test methods shall be the ones according to the specifications of

VDE 0884:1992-06

* Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates

isolation characteristics by partial discharge due to applying high voltage

(ex. VINITIAL ). And there is possibility that this product occurs partial discharge in

operating isolation voltage (VIORM)

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 11 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

PARTIAL DISCHARGE TEST METHOD

t2t3

tini

t1 tp

tb t4

VVINTIAL

pr

V

IORM

V

t

t3 tp

tb t4

V

pr

V

IORM

V

t

Meth od (A ) for ty pe testing and random testing.

Meth od (B) for rou tine te sti ng.

t1, t2 = 1 to 10s

t3, t4 = 1s

tp (P artial Discharge Measuring Time)= 60s

tb = 6 2s

tini = 10s

t3, t4 = 0.1s

tp (P artial Discharge Measuring Time)= 1s

tb = 1 .2s

The partial discharge level shall not exceed 5 pC during the partial discharge measuring time

interval tp under the test conditions shown above.

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 12 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

Fig.1 Forward Current vs. Ambient Fig.2 Collector Power Dissipation vs.

Ambient Temperature

Fig.3 Collector-emitter Saturation Voltage Fig.4 Forward Current vs.

Fig.5 Current Transfer Ratio vs. Fig.6 Collector Current vs.

Collector-emitter Voltage

F

0-30

Ta= 75 C

50 C 25 C

0 C

-25 C

V = 5V

Ta= 25 C T a= 25 C

I = 30mA

Pc(MAX.)

5mA

10mA

1mA

F

20mA

Forward Current

Temperature

Ic= 0.5mA

1mA

3mA

Ta= 25 C

7mA

5mA

vs. Forward Current

Forward current I (mA)

Collector power dissipation Pc (mW)

Forward current I (mA)

Collector current Ic (mA)

Current transfer ratio CTR (%)Collector-emitter saturation voltage

V (sat) (V)

Ambient temperature T a ( C) Ambient temperature Ta ( C)

Forward voltage V (V)

Forward current I (mA)

F

Forward current I (mA) Collector-emitter voltage V (V )

o

-30 0 25 50 75 100 125

10

20

30

40

50

60

-30

00 12525 50 10075

50

100

150

200

0

02.5 5.0 7.5 10.0 12.5 15.0

1

2

3

4

5

6

0

10.51015202530

2

5

10

20

50

100

200

500

00.1 0.2 0.5 1 2 5 10 20 50 100

20

40

60

80

100

120

140

0

10

20

30

40

50

12345678910

o

oo

o

Forward Voltage

O

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 13 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

F

Ic= 1mA

I = 20mA

CE

V = 2V

Ic= 2mA

Ta= 25 C tr tf

ts

td

0-30

I = 1mA

V = 5V

CE

F

Load resistance R (k )

L

Response time ( s)

Relative current transfer ratio (%)

Ambient temperature T a ( C)

Fig.7 Relative Current Transfer Ratio

vs. Am bient Temperature Fig.8 Co lle cto r-emitte r Sat ura tio n Vo lta ge

vs. Amb i en t Temperature

Ambient temperature Ta ( C)

Fig.10 Response Time vs.

Collector-emitter saturation voltage

V (sat) (V)

10-12

Fig.9 Collector Dark Current vs.

vs. Am bient Temperature

Collector Dark Current I (A)

Ambient Temperature Ta ( C)

Fig.11 Frequency Response

Frequency f (kHz)

Voltage gain Av (dB)

R = 10k

L1k 100

V = 2 V

Ic= 2mA

Ta= 25 C

-20

o

0 255075100

50

100

150

o-30

0

o

0 20406080100

0.02

0.04

0.06

0.08

0.10

0.1

-30 0.1 0.2 0.5 1 2 5 10

0.2

0.5

1

2

5

10

20

50

100

o

0 204060 10080

o

10

-11

-10

-9

-8

-7

-6

0.2

-10

0

1520.5

Load Resistance

Input ROutput

Input

R

DOutput

L

Vcc

td

tr tf

ts 90%

10%

Output

RDL

R

Vcc

Test Circuit for Response Time

Test Circuit for Frequency Response

100010010

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 14 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)

Unit : mm

4 PIN 8 PIN

16 PIN

Part No. : LTV814 / 824 / 844 (M, S, STA1)-V Page : 15 of 15

BNS-OD-C131/A4