2002. 6. 18 1/2
SEMICONDUCTOR
TECHNICAL DATA
BCV71/72, BCW71/72
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING.
FEATURES
Super Mini Packaged Transistor for Hybrid Circuits.
For Complementary with PNP Type BCW69/70/89.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
MARK SPEC
Type Name
Marking
Lot No.
TYPE MARK
BCW71 K 1
BCW72 K 2
BCV71 K 7
BCV72 K 8
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BCW71/72 VCBO
50
V
BCV71/72 60
Collector-Emitter
Voltage
BCW71/72 VCEO
45
V
BCV71/72 60
Emitter-Base Voltage VEBO 5 V
Collector Current IC100 mA
Emitter Current IE-100 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -65～150 ℃
2002. 6. 18 2/2
BCV71/72, BCW71/72
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BCW71/72 V(BR)CEO IC=2mA, IB=0 45 - -
V
BCV71/72 60 - -
Collector-Base
Breakdown Voltage
BCW71/72 V(BR)CBO IC=10μA, IE=0
50 - -
V
BCV71/72 60 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 5.0 - - V
Collector Cut-off Current ICBO
VCB=20V, IE=0 - - 100 nA
Ta=100℃, VCB=20V, IE=0 - - 10 μA
DC Current Gain
BCV71/BCW71
hFE
VCE=5V, IC=10μA
- 100 -
BCV72/BCW72 - 160 -
BCV71/BCW71 VCE=5V, IC=2mA 110 - 220
BCV72/BCW72 200 - 450
Base-Emitter Voltage VBE(ON) VCE=5V, IC=2mA 550 - 700 mV
Base-Emitter Saturation Voltage VBE(sat)
IC=10mA, IB=0.5mA - 750 -
mV
IC=50mA, IB=2.5mA - 870 -
Collector-Emitter Saturation Voltage VCE(sat)
IC=10mA, IB=0.5mA - - 250
mV
IC=50mA, IB=2.5mA - 230 -
Transition Frequency fTIC=10mA, VCE=5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 4.0 pF
Noise Figure NF IC=0.2mA, VCE=5V, Δf=200Hz
Rg=2kΩ, f=1kHz - - 10 dB
