SCHOTTKY RECTIFIER 2.1 Amp
10MQ100N
Bulletin PD-20520 rev. I 03/03
1
Major Ratings and Characteristics
I FDC 2.1 A
VRRM 100 V
IFSM @ tp = 5 µs sine 120 A
VF@ 1.5Apk, TJ=125°C 0.68 V
TJrange - 55 to 150 °C
Characteristics 10MQ100N Units The 10MQ100N surface mount Schottky rectifier has been de-
signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 M AX. )
5.53 (.218)
1.27 MIN.
(.050 M IN.)
1.47 MIN.
(.058 MI N.)
SOLD ERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
Device Marking: IR1J
SMA
Outline SMA Similar to D-64
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
10MQ100N
Bulletin PD-20520 rev. H 05/02
2www.irf.com
Part number 10MQ100N
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ 1A
0.68 V @ 1.5A
IRM Max. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
VF(TO) Threshold Voltage 0.52 V TJ = TJ max.
rtForward Slope Resistance 78.4 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1J
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
Absolute Maximum Ratings
IF(AV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 126 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IAR Repetitive Avalanche Current 0.5 A
Parameters 10MQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
10MQ100N
Bulletin PD-20520 rev. H 05/02
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
In stantan e ous Forward Curren t - I (A )
F
FM
T = 150°C
T = 125°C
T = 2 5 °C
J
J
J
Forward Voltage Dr op - V (V)
0
0.0001
0.001
0.01
0.1
1
020406080100
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Cu rrent - I ( mA)
T = 150°C
J
Reverse V oltage - V (V)
1
10
100
020406080100
T = 25°C
J
R
T
Jun ction C apacitance - C (pF)
Rev erse V oltage - V (V)
10MQ100N
Bulletin PD-20520 rev. H 05/02
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
1
10
100
10 100 1000 10000
FSM
Non-Repetitive Surge Curr ent - I (A)
At Any Rated Load Condi tion
And Wi th Rated V Applied
Following Surge
RRM
p
Square Wave Pulse Dur ation - t (microsec)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.4 0.8 1.2 1.6 2 2.4
DC
Average Power Loss - (Watts)
F(AV)
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Aver age Forward Cur rent - I (A)
90
100
110
120
130
140
150
0 0.4 0.8 1.2 1.6 2 2.4
DC
All owable Case Temper atu r e - (° C)
F(AV)
se e note (2)
Square wave (D = 0.50)
80 % Rated V applied
R
Aver age Forwar d Curr ent - I (A)
D = 0. 20
D = 0. 25
D = 0. 33
D = 0. 50
D = 0. 75
10MQ100N
Bulletin PD-20520 rev. H 05/02
5
www.irf.com
IR LOGO
YEAR
CURRENT
IR1J VOLTAGE
YYWWX
WEEK
SITE ID
Marking & Identification Ordering Information
10MQ SERIES - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 7500
PIECES).
EXAMPLE: 10MQ100NTR - 15000 PIECES
10MQ SERIES - BULK QUANTITIES
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 1000
PIECES).
EXAMPLE: 10MQ100N - 2000 PIECES
Tape & Reel Information
Dimensions in millimeters and (inches)
NOTE:
1. OUTLINE CONFORMS TO EIA-481.
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
10MQ100N
Bulletin PD-20520 rev. H 05/02
6www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
