AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 4 x .0 6 2 x 4 5 2X B OD C E F FEATURES: G * Internal Input/Output Matching Networks * PG = 7.7 dB at 300 W/1090 MHz * OmnigoldTM Metalization System H L I J K P M MAXIMUM RATINGS IC 20 A VCC 65 V PDISS 1166 W @ TC = 25 C TJ -65 C to +250 C TSTG -65 C to +200 C JC 0.15 C/W N M A X IM U M D IM M IN IM U M inches / m m inches / m m A .0 2 0 / 0 .5 1 .0 3 0 / 0 .7 6 B .1 0 0 / 2 .5 4 C .3 7 6 / 9 .5 5 D .1 1 0 / 2 .7 9 .1 3 0 / 3 .3 0 E .3 9 5 / 1 0 .0 3 .4 0 7 / 1 0 .3 4 .3 9 6 / 1 0 .0 6 F .1 9 3 / 4 .9 0 G .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 H I .6 4 0 / 1 6 .2 6 J .8 9 0 / 2 2 .6 1 .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 K .3 9 5 / 1 0 .0 3 .4 1 5 / 1 0 .5 4 L .0 0 4 / 0 .1 0 .0 0 7 / 0 .1 8 M .0 5 2 / 1 .3 2 .0 7 2 / 1 .8 3 N .1 1 8 / 3 .0 0 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 P ORDER CODE: ASI10572 CHARACTERISTICS TC = 25 C NONETEST CONDITIONS SYMBOL RBE = 10 BVCES IC = 50 mA BVEBO IE = 25 mA ICES VCE = 50 V hFE VCE = 5.0 V IC = 1.0 A GP C VCC = 50 V POUT = 300 W MINIMUM TYPICAL MAXIMUM 65 V 2.0 V 10 f = 960 - 1215 MHz UNITS 6.5 45 25 mA 120 --dB % Pulse Width = 10 sec, Duty Cycle 10 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/3 AVF300 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/3 AVF300 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 3/3