BIPOLAR ANALO G INTEG RATED CIRCUITS
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
Document No. P12771EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
DATA SHEET
The mark shows major revised poi nts.
DESCRIPTION
The
µ
PC2757TB and
µ
PC2758TB are silicon monolithic integrated circuit designed as 1st frequency down-
converter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The
µ
PC2757TB features low current consumption and the
µ
PC2758TB features improved intermodulation. From these
two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller
package than conventional T suffix ICs contribute to reduce your system size.
The
µ
PC2757TB and
µ
PC2758TB are manufactured using Renesas 20 GHz fT NESAT™III silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from
external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFout = 20 to 300 MHz
High-density surface mounting : 6-pin super minimold package
Low current consumption : ICC = 5.6 mA TYP. @
µ
PC2757TB
ICC = 11 mA TYP. @
µ
PC2758TB
Supply voltage : VCC = 2.7 to 3.3 V
Minimized carrier leakage : Due to double balanced mixer
Equable output impedance : Single-end push-pull IF amplifier
Built-in power save function
APPLICATIONS
Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on):
µ
PC2758TB
Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on):
µ
PC2757TB
ORDERING INFORMATION
Part Number Package Markings Supplyi ng Form Product Type
µ
PC2757TB-E3 C1X Low current c ons umption
µ
PC2758TB-E3
6-pin
super
minimold C1Y
Embossed tape 8 mm wi de.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel. High OIP3
Remark To order evaluation samples, please contact your nearby sales office (Part number for sample order:
µ
PC2757TB-A,
µ
PC2758TB-A).
Caution Electro-static sensitive devices
DISCONTINUED
Data Sheet P12771EJ3V0DS00
2
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
CONTENTS
1. PIN CONNECTIONS.............................................................................................................................................3
2. PRODUCT LINE-UP.............................................................................................................................................3
3. INTERNAL BLOCK DIAGRAM...........................................................................................................................4
4. SYSTEM APPLICATION EXAMPLE...................................................................................................................4
5. PIN EXPLANATION .............................................................................................................................................5
6. ABSOLUTE MAXIMUM RATINGS......................................................................................................................6
7. RECOMMENDED OPERATING RANGE............................................................................................................6
8. ELECTRICAL CHARACTERISTICS....................................................................................................................6
9. STANDARD CHARACTERISTICS FOR REFERENCE .....................................................................................7
10. TEST CIRCUIT .....................................................................................................................................................8
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD.................................8
12. TYPICAL CHARACTERISTICS............................................................................................................................9
12.1
µ
µµ
µ
PC2757TB..................................................................................................................................................9
12.2
µ
µµ
µ
PC2758TB................................................................................................................................................11
13. S-PARAMETERS ................................................................................................................................................13
13.1
µ
µµ
µ
PC2757TB................................................................................................................................................13
13.2
µ
µµ
µ
PC2758TB................................................................................................................................................14
14. PACKAGE DIMENSIONS....................................................................................................................................15
15. NOTE ON CORRECT USE................................................................................................................................16
16. RECOMMENDED SOLDERING CONDITIONS..................................................................................................16
DISCONTINUED
Data Sheet P12771EJ3V0DS00 3
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
1. PIN CONNECTIONS
µ
PC2757TB,
µ
PC2758TB in common
Pin No. Pin Name
1 RFinput
2GND
3 LOinput
4PS
5V
CC
6 IFoutput
2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50
)
Items
Part No.
No RF
ICC
(mA)
900 MHz
SSB · NF
(dB)
1.5 GHz
SSB · NF
(dB)
1.9 GHz
SSB · NF
(dB)
900 MHz
CG
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
µ
PC2757T
µ
PC2757TB 5.6101013151513
14 14 12
µ
PC2758T
µ
PC2758TB 11 9 1013191817
13 12 11
µ
PC8112T
µ
PC8112TB 8.5 9 11 11 15 13 13 10 97
Items
Part No.
900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
IF Output
Configuration Packages
µ
PC2757T 6-pin mini m ol d
µ
PC2757TB 3−−
8−−− 6-pin super minimol d
µ
PC2758T 6-pin mini m ol d
µ
PC2758TB +1 −−
4−−−
Emitter follower
6-pin super mini m ol d
µ
PC8112T 6-pin mini m ol d
µ
PC8112TB 2.5 3380 57 55 Open collec tor 6-pin super mini m ol d
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Cautions 1. The
µ
µµ
µ
PC2757 and
µ
µµ
µ
PC2758’s IIP3 are calculated with
IM3 = 3 which is the same IM3
inclination as
µ
µµ
µ
PC8112. On the other hand, OIP3 of Standard characteristics in page 7 is
cross point IP.
2. This document is to be specified for
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB. The other part number
mentioned in this document should be referred to the data sheet of each part number.
(Top View)
3
2
1
4
5
6
(Bottom View)
4
5
6
3
2
1
Example marking is for PC2757TB
µ
C1X
DISCONTINUED
Data Sheet P12771EJ3V0DS00
4
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
3. INTERNAL BLOCK DIAGRAM (
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB in common)
RF
input IF
output
POWER
SAVE
GNDV
CC
LO
input
4. SYSTEM APPLICATION EXAMPLE
DIGITAL CELLULAR TELEPHONE
PC2758TB
µ
÷N PLLVCO
SW
PA
RX
TX
DEMOD.
Low noise Tr.
Driver
PLL
90˚
I
Q
I
Q
φ
DISCONTINUED
Data Sheet P12771EJ3V0DS00 5
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
5. PIN EXPLANATION (Both
µ
µµ
µ
PC2757TB, 2758TB)
Pin
No. Pin
Name Applied
Voltage (V ) Pin Voltage
(V)Note Functi on and A ppl i cation Internal E qui valent Circuit
1 RFinput 1.2 This pin i s RF input f or m i xer
designed as doubl e bal ance type.
This ci rcuit c ontributes to suppress
spurious signal wit h m i ni mum LO
and bias power consumption.
Also this symmetrical circuit can
keep spec i f i ed performance i nsensi-
tive t o process -c ondi tion
distribution.
1
V
CC
To IF
Amp.
From
LO
2 GND GND This pin is ground of IC.
Must be connected to the system
ground with mini m um i nductanc e.
Ground pattern on the board should
be formed as wi de as possi bl e.
(Track length should be k ept as
short as pos sible. )
3 LOinput 1.3 This pin is LO input f or l ocal buff er
designed as di fferenti al am pl i fier.
Recommendable i nput level i s –15
to 0 dBm. Also this symmetrical
circui t can keep specif i ed
performance i nsensit i ve to process-
conditi on di stribut i on.
V
CC
3
Mixer
4PSV
CC or GND This pin is for power-save function.
This pin can control ON/ OFF
operation wit h bi as as foll ows;
Rise time/fall time using this pin are
approximat el y 10
µ
s.
V
CC
4
5V
CC 2.7 to 3.3 Supply v ol tage 3.0 ±0.3 V for
operation. M ust be connected
bypass capacit or. (example: 1 000
pF) to minim i ze ground impedanc e.
6 IFoutput 1.7 This pin is output from IF buff er
amplifi er designed as s i ngl e-ended
push-pull t ype. This pi n i s assi gned
for emitter follower output with low-
impedance. In the case of
connect i ng t o hi gh-i m pedance
stage, pl ease attach external
matchi ng circuit.
V
CC
6
Note Each pin voltage is measured at VCC = 3.0 V
Bias: V Operation
VPS 2.5 ON
0 to 0.5 OFF
DISCONTINUED
Data Sheet P12771EJ3V0DS00
6
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
6. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
Supply V ol tage VCC TA = +25°C 5.5 V
Power Diss i pation of P ackage Al l owance PDMounted on 50 × 50 × 1. 6 m m
double sided c opper clad epoxy
glass board at TA = +85°C
270 mW
Operating Am bi ent Tem perature TA–40 to +85 °C
Storage Temperat ure Tstg –55 to +150 °C
PS Pin Voltage V PS TA = +25°C 5.5 V
7. RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit
Supply V ol tage VCC 2.7 3.0 3.3 V
Operating Am bi ent Tem perature TA–40 +25 +85 °C
LO Input Power PLOin –15 –10 0 dBm
8. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm,
ZS = ZL = 50
)
µ
PC2757TB
µ
PC2758TB
Parameter Symbol Conditions MIN. TYP. MAX. MIN. TYP. MAX. Unit
Circuit Current ICC No input s i gnal 3.7 5.6 7.7 6.6 11 14.8 mA
RF Input Frequency fRFin CG (CG1 –3 dB)
fIFout = 130 M Hz constant 0.1 2.0 0.1 2.0 GHz
IF Output Frequency fIFout CG (CG1 –3 dB)
fRFin = 0.8 GHz c onstant 20 300 20 300 MHz
Conversion Gai n 1 CG1 fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –40 dBm, Upper local 12 15 18 16 19 22 dB
Conversion Gai n 2 CG2 fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –40 dBm, Lower local 10 13 16 14 17 20 dB
SSB Noise Figure 1 SSB • NF1
f
RFin
= 0.8 GHz, f
IFout
= 130 MHz,
SSB mode,
Upper local 10 13 912dB
SSB Noise Figure 2 SSB • NF2
f
RFin
= 2.0 GHz, f
IFout
= 250 MHz,
SSB mode, Lower local 13 16 13 15 dB
Saturated Output
Power 1 PO(sat) 1f
RFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –10 dBm, Upper l ocal –11 –3 –7 +1 dBm
Saturated Output
Power 2 PO(sat) 2f
RFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –10 dBm, Lower l ocal –11 –8 –7 –4 dBm
DISCONTINUED
Data Sheet P12771EJ3V0DS00 7
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
9. STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50
)
Reference Val ue
Parameter Symbol Conditions
µ
PC2757TB
µ
PC2758TB Unit
3rd Order Distort i on Output
Intercept Point OIP3fRFin = 0. 8 to 2.0 GHz, fIFout = 0.1 GHz ,
Cross point IP +5 +11 dBm
LO Leakage at RF pin LOrf fLOin = 0.8 to 2.0 GHz –35 –30 dBm
LO Leakage at IF pi n LOif fLOin = 0.8 to 2.0 GHz –23 –15 dBm
Circuit Current at P ower S a ve
Mode ICC(PS) VPS = 0.5 V 0.1 0.1
µ
A
DISCONTINUED
Data Sheet P12771EJ3V0DS00
8
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
10. TEST CIRCUIT
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
C
1
1 000 pF
C
2
3
2
1
4
5
6
LOinput
GND
RFinput
PS
V
CC
IFoutput
(Top View)
Signal Generator
Signal Generator
3 300 pF
C
4
C
3
3 V
3 300 pF
POWER
SAVE
50
1 000 pF
50 50
Spectrum Analyzer
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
LO
input
RF
input
PS bias
Voltage supply
IF
output
GND
C
2
C
1
V
CC
PS
C
4
C
5
C
3
Component List
No. Value
C1, C21 000 pF
C3 to C53 300 pF
Notes 1. 35 × 42 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4. °{: Through holes
Application explanation
This IC is guaranteed on the test circuit constructed with 50 equipment and transmission line.
This IC, however, does not have 50 input/output impedance, but electrical characteristics such as conversion
gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you
should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of
RF input with external circuit (50 termination or impedance matching.)
DISCONTINUED
Data Sheet P12771EJ3V0DS00 9
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
12. TYPICAL CHARACTERISTICS (TA = +25°
°°
°C, on Measurement Circuit)
12.1
µ
µµ
µ
PC2757TB
20
18
16
14
12
10
8
60 0.5 1.0 1.5 2.0 2.5
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
IFout
= 130 MHz
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
RFin
= 800 MHz
Conversion Gain CG (dB)
RF Input Frequency f
RFin
(GHz)
IF Output Frequency f
IFout
(MHz)
15
14
13
12
11
10
9
7
8
6
1.4 1.6 1.8 2.0 2.2 2.4 2.6
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
IFout
= 130 MHz
SSB Noise Figure SSB • NF (dB)
RF Input Frequency f
RFin
(GHz)
9
8
7
6
5
4
3
2
1
00123456
No input signal
V
CC =
V
PS
Circuit Current I
CC
(mA)
Supply Voltage V
CC
(V)
20
18
16
14
12
10
8
60 100 200 300 400 500 700600
Conversion Gain CG (dB)
V
CC
= V
PS
= 3.0 V
f
RFin
= 900 MHz
f
LOin
= 800 MHz
P
RFin
= –40 dBm
LO Input Power P
LOin
(dBm)
25
20
15
10
0
5
–5
–50 –40 –30 –20 –10 0 10
Conversion Gain CG (dB)
V
CC
= V
PS
= 3.0 V
f
RFin
= 2.0 GHz
f
LOin
= 1.9 GHz
P
RFin
= –40 dBm
LO Input Power P
LOin
(dBm)
25
20
15
10
0
5
–5
–50 –40 –30 –20 –10 0 10
Conversion Gain CG (dB)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CONVERSION GAIN vs. RF INPUT FREQUENCY
SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY
CONVERSION GAIN vs. LO INPUT POWER CONVERSION GAIN vs. LO INPUT POWER
DISCONTINUED
Data Sheet P12771EJ3V0DS00
10
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
IM
3
RF Input Power P
RFin
(dBm)
20
10
0
–10
–20
–30
–40
–60
–50
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
f
RFin
= 800 MHz
f
LOin
= 930 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
LO Input Frequency f
LOin
(GHz)
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–600 0.5 1 1.5 2 2.5
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intemodulation Distortion IM
3
(dBm)
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intemodulation Distortion IM
3
(dBm)
RF Input Power P
RFin
(dBm)
20
10
0
–10
–20
–30
–40
–60
–50
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
f
RFin
= 2 GHz
f
LOin
= 1.75 GHz
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
P
out
P
out
IM
3
LO Leakage at RF Pin LO
rf
(dBm)
LO Leakage at IF Pin LO
if
(dBm)
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
LO Input Frequency f
LOin
(GHz)
–10
–15
–20
–25
–30
–35
–40
–450 0.5 1 1.5 2 2.5
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
LO LEAKAGE AT RF PIN vs.
LO INPUT FREQUENCY LO LEAKAGE AT IF PIN vs.
LO INPUT FREQUENCY
Remark The graphs indicate nominal characteristics.
DISCONTINUED
Data Sheet P12771EJ3V0DS00 11
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
12.2
µ
µµ
µ
PC2758TB
24
22
20
18
16
14
12
100 0.5 1.0 1.5 2.0 3.02.5
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
IFout
= 130 MHz
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
RFin
= 800 MHz
Conversion Gain CG (dB)
RF Input Frequency f
RFin
(GHz)
IF Output Frequency f
IFout
(MHz)
20
15
10
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
CC
= V
PS
= 3.0 V
P
RFin
= –40 dBm
P
LOin
= –10 dBm
f
IFout
= 130 MHz
SSB Noise Figure SSB • NF (dB)
RF Input Frequency f
RFin
(GHz)
20
15
10
5
00123456
No input signal
V
CC
= V
PS
Circuit Current I
CC
(mA)
Supply Voltage V
CC
(V)
20
18
17
15
13
11
19
16
14
12
100 100 200 300 400 500 600
Conversion Gain CG (dB)
V
CC
= V
PS
= 3.0 V
f
RFin
= 800 MHz
f
LOin
= 930 MHz
P
RFin
= –40 dBm
LO Input Power P
LOin
(dBm)
25
20
15
10
0
5
–5
–50 –40 –30 –20 –10 0 10
Conversion Gain CG (dB)
V
CC
= V
PS
= 3.0 V
f
RFin
= 2.0 GHz
f
LOin
= 1.9 GHz
P
RFin
= –40 dBm
LO Input Power P
LOin
(dBm)
25
20
15
10
0
5
–5
–50 –40 –30 –20 –10 0 10
Conversion Gain CG (dB)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE CONVERSION GAIN vs. RF INPUT FREQUENCY
SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY
CONVERSION GAIN vs. LO INPUT POWERCONVERSION GAIN vs. LO INPUT POWER
DISCONTINUED
Data Sheet P12771EJ3V0DS00
12
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
RF Input Power P
RFin
(dBm)
20
10
0
–10
–20
–30
–40
–60
–50
–80
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
LO Input Frequency f
LOin
(GHz)
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
RF Input Power P
RFin
(dBm)
20
10
0
–10
–20
–30
–40
–60
–50
–80
–70 –70
–50 –40 –30 –20 –10 0 10–50 –40 –30 –20 –10 0 10
f
RF1
= 2.0 GHz
f
RF2
= 2.005 GHz
f
LO
= 1.9 GHz
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
f
RF1
= 800 MHz
f
RF2
= 805 MHz
f
LO
= 900 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
LO Leakage at RF Pin LO
rf
(dBm)
LO Leakage at IF Pin LO
if
(dBm)
P
LOin
= –10 dBm
V
CC
= V
PS
= 3.0 V
LO Input Frequency f
LOin
(GHz)
0
–10
–20
–30
–40
–50
–60
0
–10
–20
–30
–40
–50
–60 0 0.5 1.0 1.5 2.0 3.02.50 0.5 1.0 1.5 2.0 3.02.5
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
LO LEAKAGE AT RF PIN vs.
LO INPUT FREQUENCY LO LEAKAGE AT IF PIN vs.
LO INPUT FREQUENCY
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
Remark The graphs indicate nominal characteristics.
DISCONTINUED
Data Sheet P12771EJ3V0DS00 13
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
13. S-PARAMETERS
13.1
µ
µµ
µ
PC2757TB
Calibrated on pin of DUT
START 0.050000000 GHz
STOP 3.000000000 GHz
RF PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 56.422 -j275.59
2:900 MHz 38.68 -j152.71
3:1 500 MHz 31.699 -j88.102
4:1 900 MHz 29.209 -j65.926
5:2 500 MHz 29.209 -j44.758
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
RF PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 104.03 -j413.42
2:900 MHz 74.82 -j243.06
3:1 500 MHz 59.266 -j154.98
4:1 900 MHz 51.227 -j124.55
5:2 500 MHz 43.996 -j95.117
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
LO PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 90.969 -j243.41
2:900 MHz 67.828 -j150.32
3:1 500 MHz 51.488 -j97.273
4:1 900 MHz 44.621 -j77.352
5:2 500 MHz 39.627 -j56.738
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
LO PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 114.16 -j400.03
2:900 MHz 75.133 -j242.73
3:1 500 MHz 53.516 -j154.21
4:1 900 MHz 44.789 -j124.74
5:2 500 MHz 37.004 -j93.828
MARKER 1
500.0 MHz
5432
1
1
1.0 Units
200.0 mUnits/
56.422 –275.59
S
11
REF
hp
1
1.0 Units
200.0 mUnits/
104.03 –413.42
S
11
REF
hp
1
1.0 Units
200.0 mUnits/
90.969 –243.41
S
11
REF
hp
1
1.0 Units
200.0 mUnits/
114.16 –400.03
S
11
REF
hp
ZZ
ZZ
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
V
CC
= V
PS
= 3.0V
1:130 MHz 19.146 -j7.2041
2:250 MHz 22.73 -j12.909
MARKER 1
130.0 MHz
2
1
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
V
CC
= 3.0V V
PS
= GND
1:130 MHz 66.38 -j1.3174 k
2:250 MHz 88.281 -j725.41
MARKER 1
130.0 MHz
2
1
1
1.0 Units
200.0 mUnits/
19.146 7.2041
S
22
REF
hp
1
1.0 Units
200.0 mUnits/
066.38 –1.3174 k
S
22
REF
hp
ZZ
DISCONTINUED
Data Sheet P12771EJ3V0DS00
14
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
13.2
µ
µµ
µ
PC2758TB
Calibrated on pin of DUT
START 0.050000000 GHz
STOP 3.000000000 GHz
RF PORT
VCC = VPS = 3.0V
1:500 MHz 63.312 -j261.34
2:900 MHz 40.227 -j142.36
3:1 500 MHz 32.441 -j79.68
4:1 900 MHz 31.107 -j58.273
5:2 500 MHz 30.871 -j39.08
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 107.13 -j395.56
2:900 MHz 78.711 -j234.41
3:1 500 MHz 61.922 -j148.82
4:1 900 MHz 52.629 -j119.55
5:2 500 MHz 44.766 -j90.578
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
LO PORT
VCC = VPS = 3.0V
1:500 MHz 73.398 -j188.13
2:900 MHz 64.551 -j112.66
3:1 500 MHz 53.133 -j72.941
4:1 900 MHz 48.111 -j57.307
5:2 500 MHz 44.541 -j41.564
MARKER 1
500.0 MHz
5432
1
START 0.050000000 GHz
STOP 3.000000000 GHz
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 100.31 -j374.75
2:900 MHz 73.148 -j223.07
3:1 500 MHz 57.719 -j144.02
4:1 900 MHz 50.738 -j119.52
5:2 500 MHz 41.836 -j90.25
MARKER 1
500.0 MHz
5432
1
11.0 Units
200.0 mUnits/
63.312 –261.34
S11
REF
hp
11.0 Units
200.0 mUnits/
107.13 –395.56
S11
REF
hp
11.0 Units
200.0 mUnits/
73.398 –188.13
S11
REF
hp
11.0 Units
200.0 mUnits/
100.31 –374.75
S11
REF
hp
ZZ
ZZ
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = VPS = 3.0V
1:130 MHz 15.696 -j9.5811
2:250 MHz 21.4 -j16.331
MARKER 1
130.0 MHz
2
1
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = 3.0V VPS = GND
1:130 MHz 106.69 -j1.3425 k
2:250 MHz 83.75 -j711.47
MARKER 1
130.0 MHz
2
1
11.0 Units
200.0 mUnits/
15.696 9.5011
S22
REF
hp
11.0 Units
200.0 mUnits/
106.69 –1.3425 k
S22
REF
hp
ZZ
DISCONTINUED
Data Sheet P12771EJ3V0DS00 15
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
14. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
2.0±0.2
1.3
0.650.65
0.2
+0.1
–0.05
2.1±0.1
1.25±0.1
0.1 MIN.
DISCONTINUED
Data Sheet P12771EJ3V0DS00
16
µ
µµ
µ
PC2757TB,
µ
µµ
µ
PC2758TB
15. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) The DC cut capacitor must be attached to input pin.
16. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method Soldering Condition Recommended Condition Sy m bol
Infrared Refl ow Package peak t emperature: 235° C or bel ow
Time: 30 s econds or les s (at 210°C)
Count: 3, Exposure l i m i t: NoneNote
IR35-00-3
VPS Package peak temperature: 215°C or below
Time: 40 s econds or les s (at 200°C)
Count: 3, Exposure l i m i t: NoneNote
VP15-00-3
Wave Solderi ng Solderi ng bath temperat ure: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure l i m i t: NoneNote
WS60-00-1
Partial Heating Pin temperature: 300° C
Time: 3 s econds or les s (per side of device)
Exposure l i mit: NoneNote
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
DISCONTINUED
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
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the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
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DISCONTINUED
Mouser Electronics
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