TYPES TIP41, TIP41A, TIP41B, TIP41C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP42, TiP42A, TIP42B, TIP42C @ 65 W at 25C Case Temperature e 6A Rated Collector Current Min fT of 3 MHz at 10 V,500 mA mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB MECHANICAL INTERCHANGEABILITY OF TIP4t PLASTIC PACKAGE WITH TO.66 OUTLINE Se THIS PORTION OF LEADS, st FREE OF FLASH ~~ - oa 5 coutecton 2 aed ol 2820 z EMITTER st pope gaze | [ [. Lazta ane an 890 05 o.o18 3 LEADS 0.378 0.190 - oor Pat om fates Te, + 9.890, 4 0.115 9.088, 0570 086 CASE TEMPERATURE (70-66 DIMENSIONS} O210 0.0: a.i86 MEASUREMENT POINT RAO (3 PLACES} ALL DIMENSIONS ARE (INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted) NOTES: Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage : Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current . Safe Operating Region at (or below) 25 c Case Temperature Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3) Continuous Device Dissipation at (or below) 25 C Free- Air Temperature (See Note 4} Unclamped. Inductive Load Energy (See Note 5) Operating Collector Junction Temperature Range Storage Temperature Range Lead Temperature 1/8 Inch from Case for 10 Seconds This value applies when the base-emitter diode is open-circuited. . This value applies for ty, < 0.3 ms, duty cycle < 10%, . Derate linearly to 150C free-air temperature at the rate of 16 MW/C. . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2, L = 20 mH, Reg2 = 100 2, Vep2 = 9 V, Rg = 0.1 9. Vec = 10 V. Energy I2L/2. 1 2 3. Derate tinearly to 150C case temperature at the rate of 0.52 W/C. 4. 5, TIP41 =TIPA1A TIP&4iB TIP41C 40V 60V 80 V 100 V 40V 60 V 80V 100 V <._ 5V ___ <<. 6A _ <?-__- 110A _~_____ a 3A _ <?_ See Figure 5 --> <_ 65 W ______> <+.<\____ 2w ______ <?_ 62.5 ms ___ < -65C to 150C __ < 65C to 150C __ <_- 260C ____ TEXAS INSTRUMENTS 2-201TYPES TIP41, TIP41A, TIP41B, TIP41C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS mPa TIPAIA TIPATB TIPAIC UNIT MIN MAX |MIN MAX|MIN MAX|MIN MAX v Collector-Emitter { =30mA, tg =0, 40 60 80 100 Vv {BRICEO Breakdown Voltage See Note 6 Collector Cutoff VceE =30V, Ip =0 0.7 0.7 ceo mA Current Vce =60V, Ip =0 0.7 0.7 Vce =40V, Vee =0 04 Collector Cutoff Voce = 60V, Vee =0 0.4 Ices collector Cuto CE BE mA Current Voce = 80V, Vee =0 0.4 Voce = 100 V, Vee =0 0.4 Emitter Cutoff | Vep=5V, Ic =0 1 1 1 + | mA EBO Current EB Voce =4V, Ic 203A, Static Forward ce c 30 30 30 30 See Notes 6 and 7 bre Current Transfer , Voce =4V. Ic=3A, Ratio 15 75 | 15 75 |) 15 75 15 75 See Notes 6 and 7 Base-E mitt: Voce =4V, Ic =6A, VBE ase minter cE c 2 2 2 2iv Voltage See Notes 6 and 7 Collector-E mitter Ip=O6A ic =6A, Vv : 1.5 15 15 18 | Vv CE (sat) Saturation Voltage See Notes 6 and 7 Small-Signal Comi -E mitt Voce =10V, Ic = 0.54, hte mons miter ce c 20 20 20 20 Forward Current f=1kHz Transfer Ratio Small-Signal Common-E mitter Voce = 10V, Ic = 0.5 A, bre | of 3 3 3 3 Forward Current f=1MHz Transfer Ratio NOTES: 6, These parameters must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%, 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts, thermal characteristics PARAMETER MAX _[UNIT Regc Junction-to-Case Thermal Resistance 1.92 eo Resa Junction-to-Free-Air Thermal Resistance 62.5 switching characteristics at 25C case temperature PARAMETER TEST CONDITIONSt TYP | UNIT ton Turn-On Time Ic =6A, 'B(1) = 0.64, Ip(2) = -O.6A, 0.6 ; toff Turn-Off Time VBE(off} =-4V. RL =52, See Figure 1 1 Mm tT Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2-202 TEXAS INSTRUMENTSTYPES TIP41, TIP41A, TIP41B, TIP41C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION @) iNPUT . MONITOR IN Xo OUTPUT inota MONITOR Rag1= 1082 TuT + OOO nS 862 oT SOS 2N5385 1N914-1N974_ N14 1 Rep2= 102 RU=5 a 210 pF 882 30.9 - 1 uF Vea2= = aya } Vgen Ba2-4Vv = Te + + Vep1*= 16V ADJUST FOR T- Von= 14 VAT INPUT MONITOR TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A, Voen is a 30-V pulse (from 0 V) into a 50-2 termination. B. The Vag, waveform Is supplied by a generator with the following characteristics: tr < 15 ns, ty < 18 ns, Zou, = 50 2, ty = 20 us, duty cycle = 2%. C, Waveforms are monitored on an oscilloscope with the following characteristics: ty < 15 ns, Rip 2 10 M2, Cin < 11.5 pF. 9 . Resistors must be noninductive types. E, The d-c power supplies may require additional bypassing in order to minimize ringing. FIGURE 1 INDUCTIVE LOAD SWITCHING ty Sms He cee Note 8) o INPUT VOLTAGE -8V- t f~ 100ms } 2NS3B5 Reet 5082 200 INPUT COLLECTOR CURRENT a Reag2= 1000 ] 7 I MONITOR VipnicerR COLLECTOR = VOLTAGE R,7 0.12 Vpp1= 10V I - TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTES: A. 11 and L2 are 10 mH, 0.11 2, Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until Icy = 2.5 A. FIGURE 2 TEXAS INSTRUMENTS 2-203TYPES TIP41, TIP41A, TIP41B, TIP41C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 1000 700 Voce =4 To = 25C 400 | See Notes 6 and 7 200 100 70 40 20 hfe Static Forward Current Ratio 1 0.01 0.020.04 0.1 0.2 04 0.71 2 4 !oCollector CurrentA 710 FIGURE 3 NOTES: 6. These parameters must be measured using pulse techniquas. ty, = 300 ps, duty cycle < 2%. 7. These parameters are measured with voltage- sensing contacts separate from the current- carrying contacts. THERMAL INFORMATION DISSIPATION DERATING CURVE P7Maximum Continuous Device Dissipation-W 50 75 100 125 150 TcCase TemperatureC FIGURE 4 MAXIMUM SAFE OPERATING REGION 0.4 0.2 0.1 1 2 4 7 10 40 20 10 < 7 e & 5 To < 26C 6 6 2 8 = 300 us, d= 0.1 = 10% 5 1 = 1ms,d=0.1 = 10% 9 07 10 ms,d=0.1=1 2 . OPERA Pai P4 P41B 20 40 70100 200 400 VceCollector-E mitter VoltageV FIGURE 5 NOTE 8: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive Joad, 2-204 TEXAS INSTRUMENTS Ti connot assume ony responsibility for any circuits shown of represent that they ase free from potent infringement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIM (N ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLL3-6 Prot @ Typ To = 25 9C VCEO \cp hFE @ Ic type (100 C) min max min max NPN PNP Ww A A TIP 35B TIP 368 30 80 25 25 100 1,5 TIP 35 C TIP 36 90 7100 25 25 100 15 TIP 41 TIP 42 65 40 6 15 75 3 TIP41A TIP 424 65 60 6 15 75 3 TIP 41B TIP 42B 65 80 6 15 75 3 TIP 416 TIP 42C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70 15 20 4 BD 633 BD 634 30 45 2 25 1 BD 635 BD 636 30 60 2 25 1 BD 637 BD 638 30 80 2 25 1 BD 733 BD 734 40 32 4 50 2 BD 735 BD 736 40 32 4 50 2 BD 737 BD738 40 45 4 40 2 TIP 110 TIP 115 50 60 2 1000 1 TIP 1141 TIP 116 50 80 2 1000 1 TIP 112 TIP 117 50 100 2 1000 1 TIP 120 TIP 125 65 60 5 1000 3 TIP 121 TIP 126 65 80 5 1000 3 TIP 122 TIP 127 65 100 5 1000 3 TIP 140 TIP 145 125 60 10 1000 5 TIP 141 TIP 146 125 80 10 1000 5 TIP 142 TIP 147 125 100 10 1000 5 Prot @ Typ Ta = 25C To = 25 9C VCEO Icb hee @ le type (100 C} (100 C} min max min max Ww Ww Vv A A 2N 4915 4 87,5 80 5 25 100 2,5 2N 4998 2 (20) 80 2 30 90 1 2N 5000 2 (20) 80 2 70 200 1 2N 5002 (33,3) 80 5 30 90 2,5 2N 5004 (33,3) 80 5 70 200 2,5 2N 5038 5 140 90 20 20 100 12 2N 5039 5 140 76 20 20 100 10 2N 6148 1 (4) 80 2 30 30 1 2N 5150 1 (4) 80 2 70 200 1 2N 5152 (6,7) 80 2 30 90 2,5 2N 5154 (6,7) 80 2 70 200 25 2N 5301 5 200 40 20 40 60 1 2N 5302 5 200 60 20 40 60 1 2N 5303 5 200 80 20 40 60 1 TEXAS INSTRUMENTSfT Ices @ VcE Gehause Anwendungen min (IcEQ) package applications, remarks MHz BA Vv 3 700 80 TO-3P Verstarker, Schalter, komplementar zu TIP 36 B amplifier, switch, complementary to TIP 36 B 3 700 100 TO-66P Verstarker, Schalter, komplementar zu TIP 36 C amplifier, switch, complementary to TIP 36 C 3 400 40 TO-66P Verstarker, Schalter, komplementar zu TIP 42 amplifier, switch, complementary to TIP 42 3 400 60 TO-66P Verstarker, Schalter, komplementar zu TIP 42 A amplifier, switch, complementary to TIP 42 A 3 400 80 TO-66P Verstarker, Schalter, komplementar zu TIP 42 B amplifier, switch, complementary to TIP 42 B 3 400 100 TO-66P Verstarker, Schalter, komplementar zu TIP 42 C amplifier, switch, complementary to TIP 42 C TO-3P TO-66 Kompiementar TO-66 Endstufen TO-66 for complementary output stages TO-66 TO-66 TO-66 TO-66P TO-66P Darlington TO-66P TO-66P Verstarker, Schalter . TO-66P amplifier, switch Darlington TO-66P TO-3P TO-3P Darlington TO-3P fT ICES @ VE Gehause Anwendungen, Bemerkungen min (IcEO) package applications, remarks MHz HA v 4 (1000) 80 TO-3 Verstarker, Schalter amplifier, switch 50 (0,05) 40 TO-59 Fir Computeranwendung 60 (0,05) 40 TO-59 komplementar zu 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 (0,05) 40 TO-59 computer application 70 (0,05) 40 TO-59 complementary to 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 50 140 TO-3 Verstarker und schnelle Schalter 60 50 110 TO-3 amplifier and high-speed switch 50 (0,05) 40 TO-39 Fur Computeranwendung 60 (0,05) 40 TO-39 komplementar zu 2N 5147, 2N 5149, 2N 5151, 2N 5153 60 (0,05) 40 TO-39 computer application 70 (0,05) 40 TO-39 complementary to 2N 5147, 2N 5149, 2N 5151, 2N 5153 4 (5) 40 TO-3 Verstarker, Schalter 4 (5) 60 TO-3 amplifier, switch 4 (5) 80 TO-3 TEXAS INSTRUMENTS 37