PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET(R) Power MOSFET D RDS(on) = 13.5m G Description This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS = 55V ID = 51A S TO-220AB IRLZ44ZPbF D2Pak IRLZ44ZSPbF TO-262 IRLZ44ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range d c g i Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) www.irf.com W 0.53 16 78 110 See Fig.12a, 12b, 15, 16 W/C V mJ A mJ C Thermal Resistance ik A -55 to + 175 Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw k h Units 51 36 204 80 ik jk 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Typ. Max. Units --- 1.87 C/W 0.50 --- --- 62 --- 40 1 10/01/10 IRLZ44Z/S/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- 0.05 11 --- --- --- --- --- --- --- --- 24 7.5 12 14 160 25 42 4.5 --- --- 13.5 20 22.5 3.0 --- 20 250 200 -200 36 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 1620 230 130 860 180 280 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V gfs IDSS IGSS V V/C m m m Conditions 55 --- --- --- --- 1.0 27 --- --- --- --- --- --- --- --- --- --- --- --- V V A nA nC ns nH pF VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 31A VGS = 5.0V, ID = 30A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250A VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V ID = 31A VDS = 44V VGS = 5.0V VDD = 50V ID = 31A RG = 7.5 VGS = 5.0V D Between lead, e e e e e G f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 51 ISM (Body Diode) Pulsed Source Current --- --- 204 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 21 16 1.3 32 24 2 c Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 25C, IF = 31A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRLZ44Z/S/LPbF 1000 1000 ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 3.0V 1 60s PULSE WIDTH Tj = 25C TOP ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 0.1 100 BOTTOM 10 3.0V 60s PULSE WIDTH Tj = 175C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 Gfs, Forward Transconductance (S) 1000.0 ID, Drain-to-Source Current () VGS 15V 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V T J = 25C 100.0 T J = 175C 10.0 VDS = 20V 60s PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 T J = 175C 40 T J = 25C 20 VDS = 10V 380s PULSE WIDTH 0 0 10 20 30 40 50 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRLZ44Z/S/LPbF 2500 VGS, Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1500 1000 500 Coss Crss VDS= 44V VDS= 28V VDS= 11V 10 8 6 4 2 0 0 1 ID= 31A 10 0 100 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.0 T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 0.2 0.6 1.0 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec 0.1 0.1 4 10 1.8 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLZ44Z/S/LPbF 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 60 ID , Drain Current (A) 50 40 30 20 10 0 ID = 30A VGS = 5.0V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 T J , Junction Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 0.02 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri 0.01 R3 R3 3 C 3 Ri (C/W) i (sec) 0.736 0.000345 0.687 0.00147 0.449 0.007058 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLZ44Z/S/LPbF DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 320 15V ID 3.7A 5.7A BOTTOM 31A TOP 240 160 80 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 3.0 VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K VCC VGS(th) Gate threshold Voltage (V) 10 V 2.5 ID = 250A 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRLZ44Z/S/LPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 31A 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRLZ44Z/S/LPbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. + VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRLZ44Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" Note: "P" inass embly line position indicates "Lead - Free" INTERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLZ44Z/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS SEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNATES LEAD - F REE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLZ44Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS SEMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRLZ44Z/S/LPbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.166mH This value determined from sample failure population. 100% RG = 25, IAS = 31A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/2010 12 www.irf.com