Preliminary Datasheet BCR10PM-12LB Triac R07DS0105EJ0300 (Previous: REJ03G0462-0200) Medium Power Use Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904 IT (RMS) : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA) Note5 Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay, copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Page 1 of 7 BCR10PM-12LB Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 5 0.5 10 2 - 40 to +150 - 40 to +150 2.0 2000 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 110C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note5 30Note5 30Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 -- -- -- -- 3.5 V C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 -- -- V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 5.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR10PM-12LB Preliminary Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150C 101 7 5 3 2 Tj = 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 5 3 2 VGM = 10V Gate Voltage (V) 80 0 100 4.0 101 7 5 3 V = 1.5V 2 GT 100 7 5 3 2 IRGT I PGM = 5W PG(AV) = 0.5W IGM = 2A IFGT I, IRGT III 10-1 7 VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 7 5 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Rated Surge On-State Current 103 Typical Example 7 5 3 2 102 7 5 IRGT I, IRGT III IFGT I 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR10PM-12LB Preliminary 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 Case Temperature (C) 8 6 4 2 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 120 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 160 16 140 All fins are black painted aluminum and greased 120 120 x 120 x t2.3 100 x 100 x t2.3 100 60 x 60 x t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 12 360 Conduction Resistive, 10 inductive loads Conduction Time (Cycles at 60Hz) Curves apply regardless of conduction angle 140 14 0 Ambient Temperature (C) 160 Ambient Temperature (C) 16 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Transient Thermal Impedance (C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 7 Typical Example 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Page 4 of 7 BCR10PM-12LB Preliminary 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution 102 T2+, G- Typical Example 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 100 -40 0 40 80 120 160 Junction Temperature (C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 125C 140 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) Commutation Characteristics (Tj=125C) 160 140 Typical Example Tj = 150C 120 100 80 60 40 III Quadrant 20 I Quadrant 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 7 5 Typical Example Tj = 125C 3 IT = 4A 2 = 500s VD = 200V f = 3Hz 101 7 Minimum 5 Characteristics 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Value I Quadrant III Quadrant 100 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR10PM-12LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Commutation Characteristics (Tj=150C) Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant III Quadrant 3 2 Minimum Characteristics Value 100 7 100 5 7 101 2 3 2 3 5 7 102 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6 6 Load C1 A 6V V Test Procedure I R1 A 6V 330 V 330 Test Procedure II C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100 6 A 6V V 330 Test Procedure III R07DS0105EJ0300 Rev.3.00 Sep 13, 2010 Page 6 of 7 BCR10PM-12LB Preliminary Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 3.20.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR10PM-12LB BCR10PM-12LB-A8 Note : Please confirm the specification about the shipping in detail. 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