R07DS0105EJ0300 Rev.3.00 Page 1 of 7
Sep 13, 2010
Preliminary Datasheet
BCR10PM-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150C)
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA) Note5
Viso : 2000 V
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
Outline
2
13
2
13
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
RENESAS Package code:
PRSS0003AA-A
(Package name:
TO-220F)
Applications
Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as
TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay,
copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices
Warning
1. Refer to the recommended circuit value s around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
R07DS0105EJ0300
(Previous: REJ03G0462-0200)
Rev.3.00
Sep 13, 2010
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 2 of 7
Sep 13, 2010
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 10 A
Commercial frequency, sine full wave
360° conduction, Tc = 110C
Surge on-state current ITSM 100 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 41.6 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM — — 1.5 V
Tc = 25C, ITM = 15 A,
Instantaneous measurement
V
FGT — — 1.5 V
V
RGT — — 1.5 V
Gate trigger voltageNote2
V
RGT — — 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 30Note5 mA
I
RGT — — 30Note5 mA
Gate trigger currentNote2
I
RGT — — 30Note5 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125C/150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 3.5 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 10/1 — — V/s Tj = 125C/150C
Notes: 2. Measurement using th e gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 3 of 7
Sep 13, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
2510
1
40
20
3710
2
425374
60
80
100
30
10
50
70
90
0
1.5 2.5 3.51.00.5 2.03.04.0
10
2
7
5
3
2
10
1
7
5
7
5
3
2
10
0
10
0
2310
1
5710
2
23 5710
3
23 5710
4
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
10
2
5
10
1
7
2
3
10
3
5
7
2
3
–60–20 20 60 100 160140–400 4080120
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60–20 20 60 100 160140–400 4080120
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
2310
2
5710
3
23 5
Tj = 25°C
Tj = 150°C
VGM = 10VPGM = 5W
IGM = 2A
VGT = 1.5V
IFGT I, IRGT IIIIRGT I VGD = 0.1V
PG(AV) =
0.5W
Typical Example
IRGT I, IRGT III
IFGT I
Typical Example
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 4 of 7
Sep 13, 2010
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)× 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
123 57 23 57
10
2
10
5
23 57 23 57
16
12
6
4
2
14
10
8
016
0248610 12 14
160
120
100
60
20
016
02 610 14
40
80
140
48
12
160
120
100
60
20
04.0
00.5 1.5 2.5 3.5
40
80
140
1.02.0 3.0
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
–60–20 20 60 100 160140–400 4080120
160
120
100
60
20
016
02 610 14
40
80
140
48
12
No Fins
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example
360° Conduction
Resistive,
inductive loads
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 5 of 7
Sep 13, 2010
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)× 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
160–400 4080120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
–60–20 20 60 100 140160–400 4080120
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)× 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
160
100
80
40
20
0
140
60
120
–60–20 20 60 100 160140–400 4080120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
1607
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
Typical Example
T
2
+, G+
T
2
–, G–Typical Example
T
2
+, G–
Typical Example
Distribution
Typical Example
Tj = 125°C
Typical Example
III Quadrant
I Quadrant
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
I
T
= 4A
τ = 500μs
V
D
= 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 6 of 7
Sep 13, 2010
C
1
= 0.1 to 0.47μF
R
1
= 47 to 100Ω
C
0
= 0.1μF
R
0
= 100Ω
Gate Trigger Characteristics Test CircuitsRecommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC)× 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
3710
2
4
4
42537
4
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500μs
V
D
= 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
I
RGT III
I
RGT I
I
FGT I
Load
BCR10PM-12LB Preliminary
R07DS0105EJ0300 Rev.3.00 Page 7 of 7
Sep 13, 2010
Package Dimensions
SC-67 2.0g
MASS[Typ.]
⎯PRSS0003AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
TO-220F
5.2
10.5Max
5.0
17
3.6
13.5Min
8.51.2
0.8
2.542.540.52.6
4.5
2.8
1.3Max
φ3.2±0.2
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name BCR10PM-12LB
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR10PM-12LB-A8
Note : Please confirm the specification about the shipping in detail.
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