2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Applications 1.5 0.2 Unit: mm 6.5 0.2 5.2 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) 1.6 (VGS = -10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) 2.3 1 Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k) VDGR -60 V Gate-source voltage VGSS 20 V 0.8 MAX. 2.3 2 3 2.3 0.2 Absolute Maximum Ratings (Ta = 25C) 0.6 0.15 1.1 MAX. 0.6 0.15 1. GATE 2. DRAIN HEAT SINK 3. SOURCE 2 1 (Note 1) ID -5 A Pulse (Note 1) IDP -20 A Drain power dissipation PD 20 W JEDEC Single pulse avalanche energy (Note 2) EAS 40.5 mJ JEITA Avalanche current IAR -5 A Repetitive avalenche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain current 0.6 MAX. 5.7 4.1 0.2 z Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) DC 1.1 0.2 0.9 z Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Characteristics 5.5 0.2 z 4-V gate drive TOSHIBA 3 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 C / W Thermal resistance, channel to ambient Rth (ch-a) 125 C / W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 2.2 mH, RG = 25 , IAR = -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-03-01 2SJ681 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V -- -- 10 A Drain cut-off current IDSS VDS = -60 V, VGS = 0 V -- -- -100 A V (BR) DSS ID = -10 mA, VGS = 0 V -60 -- -- V V (BR) DSX ID = -10 mA, VGS = 20 V -35 -- -- V Vth VDS = -10 V, ID = -1 mA -0.8 -- -2.0 V VGS = -4 V, ID = -2.5 A -- 0.16 0.25 VGS = -10 V, ID = -2.5 A -- 0.12 0.17 VDS = -10 V, ID = -2.5 A 2.5 5.0 -- -- 700 -- -- 60 -- -- 90 -- -- 14 -- -- 24 -- -- 14 -- -- 95 -- -- 15 -- -- 11 -- -- 4 -- Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr VDS = -10 V, VGS = 0 V, f = 1 MHz ID = -2.5 A 0V VGS Output S pF -10 V Turn-on time Fall time Turn-off time Total gate charge (Gate-source plus gate-drain) ton 4.7 Switching time RL = 12 tf toff Duty 1%, tw = 10 s VDD -30 V Qg Gate-source charge Qgs Gate-drain ("miller") charge Qgd ns VDD -48 V, VGS = -10 V, ID = -5 A nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR -- -- -- -5 A Pulse drain reverse current (Note 1) IDRP -- -- -- -20 A Forward voltage (diode) VDSF Reverse recovery time trr Reverse recovery charge Qrr IDR = -5 A, VGS = 0 V -- -- 1.7 V IDR = -5 A, VGS = 0 V dlDR / dt = 50 A / s -- 40 -- ns -- 32 -- nC Marking J681 Part No. (or abbreviation code) Lot No. Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-03-01 2SJ681 ID - VDS -5 -10 -6 -4. ID - VDS -3.5 Common source Tc = 25C Pulse test -8 -4 -8 ID -3 Drain current -2.8 -2 VGS = -2.5V -1 0 0 -0.4 -0.8 -1.2 Drain-source voltage -1.6 VDS -10 -6 -4 -8 -3.5 -6 -4 -3 -2 0 -2.0 VGS = -2.5 V 0 (V) -2 -4 ID - VGS -8 VDS (V) Common source VDS = -10 V Pulse test -6 Drain-source voltage (A) ID Drain current VDS 25 -4 -2 100 0 -1 -2 Tc = -55C -3 -4 10 VGS -1.2 -0.8 -5 -0.4 -2.5 ID = -1.2 A 0 (V) -4 -8 Common source VDS = -10 V Pulse test Tc = -55C 25 1 Drain current -10 ID -16 VGS -20 (V) RDS (ON) - ID 0.5 -1 -12 Gate-source voltage 100 0.1 -0.1 (V) Common source Tc = 25C Pulse test -1.6 0 -5 Drain-source ON resistance RDS (ON) () Yfs 100 -10 VDS - VGS Yfs - ID (S) -8 -2.0 Gate-source voltage Forward transfer admittance -6 Drain-source voltage -10 0 Common source Tc = 25C Pulse test (A) -3 (A) ID Drain current -10 Common source Tc = 25C Pulse test 0.4 0.3 0.2 -4 V 0.1 VGS = -10V 0 -100 0 (A) 3 -2 -4 -6 Drain current ID -8 -10 (A) 2010-03-01 2SJ681 RDS (ON) - Tc IDR - VDS -10 Common source Tc = 25C Pulse test (A) Common source Pulse test 0.3 -3 IDR ID = -5 A -10 -5 -2.5 Drain reverse current Drain-source ON resistance RDS (ON) () 0.4 -1.2 0.2 -5 VGS = -4 V -1.2 -2.5 0.1 VGS = -10 V -0.1 0 -80 -40 0 40 80 Case temperature 120 Tc -1 -1 160 0 (C) 0.2 0.4 VGS = 0 V 0.6 0.8 Drain-source voltage 1.0 VDS 1.2 (V) Capacitance - VDS Vth - Tc Common source -2.0 Vth (V) VGS = 0 V Tc = 25C 1000 Coss Crss -1 -10 Drain-source voltage -40 0 40 80 VDS (V) Drain-source voltage 30 20 10 -25 80 120 Case temperature 160 Tc 200 Common source ID = -5 A -40 Ta = 25C -15 -12V -20 4 -10 -24V VDD = -48 V -10 -5 VGS 0 5 10 15 Total gate charge (C) -20 Pulse test -30 0 40 160 (C) Dynamic Input/Output Characteristics VDS 0 120 Tc -50 (W) PD -0.4 (V) PD - Tc Drain power dissipation -0.8 Case temperature 40 0 -1.2 0 -80 -100 VDS -1.6 (V) 10 -0.1 Common source VDS = -10 V ID = -1 mA Pulse test 20 Qg 25 30 VGS Capacitance 100 Gate threshold voltage Ciss C (pF) f = 1 MHz Gate-source voltage 10000 0 (nC) 2010-03-01 2SJ681 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 Single pulse PDM 0.1 0.1 t 0.05 T 0.02 0.01 0.01 10 Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m Pulse width 100 m tw 1 (s) Safe Operating Area EAS - Tch 50 Avalanche energy EAS (mJ) -100 Drain current ID (A) ID max (pulsed) * -10 ID max (continuous) 100 s * 1 ms * DC operation Tc = 25C -1 10 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 Drain-source voltage VDSS max -10 40 30 20 10 0 25 -100 50 75 100 125 150 Channel temperature (initial) Tch (C) VDS (V) BVDSS 0V IAR -15 V VDS VDD Waveform Test circuit RG = 25 VDD = -25 V, L = 2.2 mH 5 AS = 1 B VDSS L I2 B 2 - V VDSS DD 2010-03-01 2SJ681 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-03-01