2N1183A Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (oC)100o I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.60 @I(C) (A) (Test Condition)400m @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq500k| @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 t(r) Max. (s) Rise time t(f) Max. (s) Fall time. Package StyleTO-8