BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.3 1
August 2015
BC857S
PNP, Multi-Chip, General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be op era-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Figure 1. Device Package Figure 2. Internal Connections
Part Number Top Mark Package Packing Method
BC857S 3C SC70 6L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -45 V
VCES Collector-Base V oltage -50 V
VCBO Collector-Base V oltage -50 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
C1
B2
E2
E1
B1
C2
pin #1
SC70-6
Mark: 3C
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
E2
B2
C1
C2
B1
E1
Description
This device is designed for general-purpose amplifier
applications at collector currents to 200 mA. Sourced
from Process 68.
BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.3 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Max. Unit
PDTotal Device Dissipation 300 mW
Derate Above 25°C2.4mW/°C
RθJA Thermal Resistance, Junction to Ambient 415 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -45 V
V(BR)CES Col lector-Base Breakdown Vo ltage IC = -10 μA, IE = 0 -50 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -50 V
V(BR)EBO Emitter-Base Breakdown V o ltage IE = -10 μA, IC = 0 -5 V
ICBO Collector Cut-Off Curr ent VCB = -30 V -15 nA
VCB = -30 V, TA = 150 °C-4μA
hFE DC Current Gain IC = -2.0 mA, VCE = -5.0 V 125 630
VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -0.30 V
IC = -100 mA, IB = -5.0 mA -0.65
VBE(on) Base-Emitter On Voltage IC = -2.0 mA, VCE = -5.0 V -0.60 -0.75 V
IC = -10 mA, VCE = -5.0 V -0.82
fTCurrent Gain-Bandwidth Product IC = -10 mA, VCE = -5.0 V,
f = 100 MHz 200 MHz
Cob Output Capacitance VCB = -10 V, f = 1.0 MHz 3.5 pF
NF Noise Figure IC = -0.2 mA, VCE = -5.0 V,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz 2.5 dB
BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.3 3
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gai n vs.
Collector Current Figure 4. Colle ctor-Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 7. Collect or Cut-Off Current vs.
Ambient Temperature Figure 8. Collector-Emitter Breakdown Voltage with
Resistance between Emitter-Base
0.01 0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
0. 1 1 1 0 10 0 30 0
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLECTOR EM ITTE R VOLTA GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
0. 1 1 1 0 10 0 30 0
0
0. 2
0. 4
0. 6
0. 8
1
1. 2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
0. 1 1 1 0 10 0 20 0
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40
°C
125 °C
25 50 75 100 125
0.01
0.1
1
10
10 0
T - A MBI E NT T EMP ER ATUR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 50V
CB
ΩΩ
CER
0.1 1 10 100 1000
70
75
80
85
90
95
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.3 4
Typical Performance Characteristics (Continued)
Figure 9. Collector Saturation Region Figure 10. Input and Output Capacitance vs.
Revers e Vol t age
Figure 11. Gain Bandwidth Product vs.
Collector Current Figure 12. Switching Times vs. Collector Current
Figure 13. Power Dissipation vs.
Ambient Temperature
100 300 700 2000 4000
0
1
2
3
4
I - BASE CURRENT (uA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CE
B
50 mA 300 mA
100 uA
Ta = 25° C
Ic =
0.1 1 10 100
10
100
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
Cib
Cob
f = 1.0 MHz
CE
1102050100150
0
10
20
30
40
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
ce
10 20 30 50 100 200 300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
0 255075100125150
0
10 0
20 0
30 0
40 0
50 0
TE MPE RATU R E ( C )
P - POWER DISSIPATION (W)
°
D
SC70-6
BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.3 5
Physical Dimensions
Figure 14. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE
SCALE: 60X
B
1.90
2.00±0.20
0.50 MIN
1.00
0.80
1.10
0.80
0.10 C
0.25
0.10
0.46
0.26
0.20
GAGE
PLANE (R0.10)
30°
0°
SEATING
PLANE
C0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6
2.10±0.30
0.10 A B
0.65
1.30
(0.25) 0.30
0.15
1
1.25±0.10
3
1.30
0.40 MIN
SEE DETAIL A
LAND PATTERN RECOMMENDATION
6
A
4
C
0.65
L
SYMM
PIN ONE
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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The datasheet is for reference information only.
Rev. I76
®
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BC857S