A Business Partner of Renesas Electronics Corporation. Preliminary PS8551L4 Data Sheet R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 ANALOG OUTPUT TYPE OPTICAL COUPLED ISOLATION AMPLIFIER DESCRIPTION The PS8551L4 is an optically coupled isolation amplifier that uses an IC with a high-accuracy sigma-delta A/D converter and a GaAIAs light-emitting diode with high-speed response and high luminance efficiency on the input side, and an IC with a high-accuracy D/A converter on the output side. The PS8551L4 is designed specifically for high common mode transient immunity (CMTI) and high linearity (non- linearity). The PS8551L4 is suitable for current sensing in motor drives. FEATURES PIN CONNECTION (Top View) * High common mode transient immunity (CMTI = 10 kV/s MIN.) - * Package: 8-pin DIP lead bending type (Gull-wing) for long creepage distance for surface mount (L4) * Embossed tape product: PS8551L4-E3 : 1 000 pcs/reel 6 + Gain: 8 V/V TYP. 7 1 - * Gain tolerance (G = 7.76 to 8.24 (3%)) 8 + * High isolation voltage (BV = 5 000 Vr.m.s.) 2 3 5 SHIELD * Non-linearity (NL200 = 0.35% MAX.) 4 1. VDD1 2. VIN+ 3. VIN- 4. GND1 5. GND2 6. VOUT- 7. VOUT+ 8. VDD2 * Pb-Free product * Safety standards * UL approved: No. E72422 * CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) * SEMKO approved: No. 1111155 * DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40019182 (Option) APPLICATIONS * AC Servo, inverter * Measurement equipment The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 1 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Long Creepage Distance For Surface Mount (L4) +0.5 9.25-0.25 10.050.4 +0.5 3.50.2 0.50.15 2.54 3.70.35 6.5-0.1 0.20.15 1.01 +0.4 -0.2 0.620.25 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 8 mm Outer Creepage Distance 8 mm Isolation Distan ce R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 0.4 mm Page 2 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title MARKING EXAMPLE No. 1 pin Mark R 8551 NT131 Company Initial Type Number Assembly Lot N T 1 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code (T: Pb-Free) Rank Code ORDERING INFORMATION Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval PS8551L4 PS8551L4-AX Pb-Free Magazine case 50 pcs Standard products PS8551L4-E3 PS8551L4-E3-AX (Ni/Pd/Au) Embossed Tape 1 000 pcs/reel (UL, CSA, SEMKO PS8551L4-V PS8551L4-V-AX Magazine case 50 pcs DIN EN60747-5-2 PS8551L4-V-E3 PS8551L4-V-E3-AX Embossed Tape 1 000 pcs/reel (VDE0884 Part2) Application Part 1 Number* PS8551L4 approved) Approved (Option) *1 For the application of the Safety Standard, following part number should be used. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 3 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings Unit Operating Ambient Temperature TA -40 to 85 C Storage Temperature Tstg -55 to125 C VDD1, VDD2 0 to 5.5 V Input Voltage VIN+, VIN- -2 to VDD10.5 V 2 Seconds Transient Input Voltage VIN+, VIN- -6 to VDD10.5 V VOUT+, VOUT- -0.5 to VDD20.5 V BV 5 000 Vr.m.s. Supply Voltage Output Voltage Isolation Voltage *1 *1 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-4 shorted together, 5-8 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Operating Ambient Temperature Supply Voltage Input Voltage (Accurate and Linear) *1 Symbol MIN. MAX. Unit TA -40 85 C VDD1, VDD2 4.5 5.5 V VIN+, VIN- -200 200 mV *1 Using VIN- = 0 V (to be connected to GND1) is recommended. Avoid using VIN- of 2.5 V or more, because the internal test mode is activated when the voltage VIN- reaches more than 2.5 V. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 4 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title ELECTRICAL CHARACTERISTICS (DC Characteristics) (TYP.: TA = 25C, VIN+ = VIN- = 0 V, VDD1 = VDD2 = 5 V, MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified) Parameter Symbol Input Offset Voltage Vos Conditions TA = 25C MIN. TYP. MAX. Unit -2 0.3 2 mV 3 -3 Input Offset Voltage Drift dVos/dTA vs. Temperature Gain G *1 Gain Drift vs. Temperature VOUT Non-linearity (200 mV) TA = 25 to +85C -200 mV VIN+ 200 mV, TA = 25C 7.76 VOUT Non-linearity (200 mV) Drift NL200 -200 mV VIN+ 200 mV *2 Maximum Input Voltage before VOUT Clipping 8.24 V/V V/VC 0.35 -100 mV VIN+ 100 mV 0.014 VIN+MAX. % %/C 0.2 308 % mV Input Supply Current IDD1 VIN+ = 400 mV 16 20 mA Output Supply Current IDD2 VIN+ = -400 mV 10 16 mA Input Bias Current IIN+ VIN+ = 0V -0.5 5 A Input Bias Current Drift vs. Temperature dIIN+/dTA 0.45 nA/C Low Level Saturated Output Voltage VOL VIN+ = -400 mV 1.29 V High Level Saturated Output Voltage VOH VIN+ = 400 mV 3.8 V Output Voltage (VIN+ = VIN- = 0 V) VOCM VIN+ = VIN- = 0 V 2.2 2.55 2.8 V Output Short-circuit Current IOSC 18.6 mA Equivalent Input Resistance RIN 320 k ROUT 15 CMRRIN 76 dB VOUT Output Resistance 8 0.0002 dNL200/dTA NL100 V/C 0.021 vs. Temperature VOUT Non-linearity (100 mV) 10 0.00087 dG/dTA *2 3 Input DC Common-Mode Rejection Ratio *3 *1 The differential output voltage (VOUT+ - VOUT-) with respect to the differential input voltage (VIN+ - VIN-), where VIN+ = -200 mV to 200 mV and VIN- = 0 V) is measured under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon the resulting chart, the gain is defined as the slope of the optimum line obtained by using the method of least squares. *2 The differential output voltage (VOUT+ - VOUT-) with respect to the differential input voltage (VIN+ - VIN-) is measured under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon the resulting chart, the optimum line is obtained by using the method of least squares. Non-linearity is defined as the ratio (%) of the optimum line obtained by dividing [Half of the peak to peak value of the (residual) deviation] by [full-scale differential output voltage]. For example, if the differential output voltage is 3.2 V, and the peak to peak value of the (residual) deviation is 22.4 mV, while the input VIN+ is 200 mV, the output non-linearity is obtained as follows: NL200 = 22.4/(2 x 3 200) = 0.35% *3 CMRRIN is defined as the ratio of the differential signal gain (when the differential signal is applied between the input pins) to the common-mode signal gain (when both input pins are connected and the signal is applied). This value is indicated in dB. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 5 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title ELECTRICAL CHARACTERISTICS (AC Characteristics) (TYP.: TA = 25C, VIN+ = VIN- = 0 V, VDD1 = VDD2 = 5 V, MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified) Parameter Symbol VOUT Bandwidth (-3 dB) fC Conditions VIN+ = 200 mVp-p, sine wave MIN. TYP. MAX. 50 100 kHz mVr.m.s. VOUT Noise NOUT VIN+ = 0 V 31.5 VIN to VOUT Signal Delay (50 to 10%) tPD10 VIN+ = 0 to 150 mV step 2.03 3.3 VIN to VOUT Signal Delay (50 to 50%) tPD50 4.01 5.6 VIN to VOUT Signal Delay (50 to 90%) tPD90 6.02 9.9 VOUT Rise Time/Fall Time (10 to 90%) tr/tf VIN+ = 0 to 150 mV step 3.53 6.6 CMTI VCM = 0.5 kV, TA = 25C PSR f = 1 MHz Common Mode Transient Immunity Power Supply Noise Rejection *2 *1 10 Unit s s 25 kV/s 100 mVr.m.s. *1 CMTI is tested by applying a pulse that rises and falls suddenly (VCM = 0.5 kV) between GND1 on the input side and GND2 on the output side (pins 4 and 5) by using the circuit shown in Fig. 9 CMTI Test Circuit. CMTI is defined at the point where the differential output voltage (VOUT+ - VOUT-) fluctuates 200 mV (>1 s) or more from the average output voltage. *2 This is the value of the transient voltage at the differential output when 1 Vp-p, 1 MHz, and 40 ns rise/fall time square wave is applied to both VDD1 and VDD2. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 6 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title TEST CIRCUIT Fig. 1 VOS Test Circuit VDD2 VDD1 1 +15 V 8 0.1 F 2 + 3 + - - 4 7 0.1 F 10 k 6 10 k 5 0.47 F 0.47 F SHIELD + AD624CD (x100) 0.1 F VOUT - 0.1 F -15 V Fig. 2 NL200, G Test Circuit VDD2 VDD1 1 VIN 0.1 F 2 404 13.2 + 3 0.01 F +15 V 8 + - - 4 7 0.1 F 10 k 6 10 k 5 0.47 F 0.47 F SHIELD + AD624CD (x4) +15 V 0.1 F - IDD1 0.1 F 0.1 F 5V 0.01 F 400 mV 3 4 + - + - 8 1 7 2 6 5 SHIELD R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 0.1 F -15 V 0.47 F Fig. 4 IDD2 Test Circuit 1 2 VOUT - -15 V 10 k Fig. 3 IDD1 Test Circuit 0.1 F + AD624CD (x10) 0.1 F 5V - 400 mV 0.01 F 3 4 8 + - IDD2 7 + - 6 5 0.1 F 5V SHIELD Page 7 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title Fig. 5 IIN+ Test Circuit 8 1 IIN+ 0.1 F 2 0.01 F 3 4 5V 7 + + - - 6 5 SHIELD Fig. 6 VOUT Test Circuit VOL 8 1 2 0.1 F 5V - 400 0.01 F 3 4 mV + - 7 + - 6 5 VOL 0.1 F 5V SHIELD VOCM 1 2 0.1 F 0.01 F 3 4 5V 8 + - 7 + - 6 5 VOCM 0.1 F 5V SHIELD VOH 8 1 2 0.1 F 5V 400 mV 0.01 F 3 4 + - 7 + - 6 5 VOH 0.1 F 5V SHIELD R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 8 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title Fig. 7 |IOSC| Test Circuit 0.1 F 0.01 F 1 8 2 7 3 4 5V + - + - 1 IOSC 6 2 0.1 F 0.1 F 5 5V 0.01 F 3 4 5V 8 7 + + - - SHIELD 6 5 IOSC 0.1 F 5V SHIELD Fig. 8 tPD Test Circuit 1 VIN 0.1 F 2 3 0.01 F 10 k VDD2 VDD1 4 +15 V 8 + + - - 7 0.1 F 2 k 6 2 k 5 VOUT NE5534 10 k SHIELD 0.1 F - + 0.1 F -15 V Fig. 9 CMTI Test Circuit 150 pF 10 k VDD2 78L05 IN 9V OUT 0.1 F 1 0.1 F 2 3 4 +15 V 8 + + - - 7 0.1 F 2 k 6 2 k 5 SHIELD + - 150 pF 10 k - PC813 + 0.1 F VOUT 0.1 F -15 V VCM R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 9 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) INPUT OFFSET VOLTAGE vs. AMBIENT TEMPERATURE 2 2 Input Offset Voltage VOS (mV) VDD1 = VDD2 = 5 V VIN+ = VIN- = 0 V 1 0 -1 -2 -3 -50 -25 0 25 50 75 1 VIN+ = VIN- = 0 V VDD2 VDD1 0.5 0 -0.5 -1 -1.5 4.75 5 5.25 Ambient Temperature TA (C) Supply Voltage VDD (V) GAIN vs. AMBIENT TEMPERATURE GAIN vs. SUPPLY VOLTAGE 0.35 Gain G (V/V) VDD1 = VDD2 = 5 V VIN+ = -200 mV to +200 mV, VIN- = 0 V Gain G (V/V) 8.24 8.2 8.16 8.12 8.08 8.04 8 7.96 7.92 7.88 7.84 7.8 7.76 -50 -25 0 25 50 75 100 VDD1 VDD2 4.75 5 5.25 NON-LINEARITY vs. AMBIENT TEMPERATURE NON-LINEARITY vs. SUPPLY VOLTAGE VDD1 = VDD2 = 5 V VIN+ = -200 mV to +200 mV, VIN- = 0 V 0.2 0.15 0.1 0.05 -25 0 25 50 75 100 Ambient Temperature TA (C) 0.35 5.5 VIN+ = -200 mV to +200 mV, VIN- = 0 V Supply Voltage VDD (V) 0.25 0 -50 8.24 8.2 8.16 8.12 8.08 8.04 8 7.96 7.92 7.88 7.84 7.8 7.76 4.5 Ambient Temperature TA (C) 0.3 Non-linearity NL200 (%) 1.5 -2 4.5 100 5.5 VIN+ = -200 mV to +200 mV, VIN- = 0 V 0.3 Non-linearity NL200 (%) Input Offset Voltage VOS (mV) 3 INPUT OFFSET VOLTAGE vs. SUPPLY VOLTAGE 0.25 0.2 0.15 0.1 VDD1 VDD2 0.05 0 4.5 4.75 5 5.25 5.5 Supply Voltage VDD (V) Remark The graphs indicate nominal characteristics. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 10 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title INPUT VOLTAGE vs. OUTPUT VOLTAGE SUPPLY CURRENT vs. INPUT VOLTAGE 20 4 Output Voltage VO (V) VOUT- 3 2.5 2 VOUT+ 1.5 1 -0.4 0 -0.2 0.2 12 10 IDD2 8 6 4 0 -0.4 0.4 IDD1 14 VDD1 = VDD2 = 5 V -0.2 0 0.2 0.4 Input Voltage VIN (V) Input Voltage VIN (V) INPUT CURRENT vs. INPUT VOLTAGE GAIN vs. FREQUENCY 5 1 4 0 3 -1 2 -2 1 0 -1 -2 -5 -0.4 -4 -5 VDD1 = VDD2 = 5 V, -7 VIN- = 0 V VIN+ = 200 mVp-p sine wave -8 10 100 1 000 10 000 100 000 VDD1 = VDD2 = 5 V VIN- = 0 V 0 -0.2 0.2 0.4 Input Voltage VIN+ (V) Frequency f (Hz) PHASE vs. FREQUENCY SIGNAL DELAY TIME vs. AMBIENT TEMPERATURE 7 Signal Delay Time PD (s) 50 0 -50 -100 -150 -3 -6 -3 -4 Phase (Deg.) 16 2 VDD1 = VDD2 = 5 V Gain GV (dB) Input Current IIN+ (A) Supply Current IDD (mA) 18 3.5 VDD1 = VDD2 = 5 V, VIN- = 0 V VIN+ = 200 mVp-p sine wave -200 10 100 1 000 10 000 100 000 1 000 000 Frequency f (Hz) 6 5 4 3 2 1 000 000 tPD90 tPD50 tr tPD10 1 VDD1 = VDD2 = 5 V, VIN- = 0 V VIN+ = 0 to 150 mV step 0 -50 -25 0 25 50 75 100 Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 11 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title 7.50.1 1.5 +0.1 -0 4.65 MAX. 10.550.1 2.00.1 4.00.1 16.00.3 Outline and Dimensions (Tape) 1.750.1 TAPING SPECIFICATIONS (UNIT: mm) 4.20.1 9.950.1 1.550.1 12.00.1 0.30.05 Tape Direction PS8551L4-E3 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 1 000 pcs/reel R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 15.9 to 19.4 Outer edge of flange Page 12 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) B C D A Part Number PS8551L4 Lead Bending lead bending type (Gull-wing) for surface mount R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 A B C D 9.0 2.54 1.7 2.0 Page 13 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of temperature higher than 220C 60 seconds or less * Time of peak reflow temperature 10 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Flux Rosin flux containing small amount of chlorine (The flux with a * Number of reflows Three maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Preheating conditions * Flux 120C or below (package surface temperature) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron * Peak Temperature (lead part temperature) * Time (each pins) * Flux 350C or below 3 seconds or less Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 14 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 F is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) Keep the pattern connected the input (VIN+, VIN-) and the output (VOUT+, VOUT-), respectively, as short as possible. (3) Do not connect any routing to the portion of the frame exposed between the pins on the package of the photocoupler. If connected, it will affect the photocoupler's internal voltage and the photocoupler will not operate normally. (4) Because the maximum frequency of the signal input to the photocoupler must be lower than the allowable frequency band, be sure to connect an anti-aliasing filter (an RC filter with R = 68 and C = 0.01 F, for example). (5) The signals output from the PS8551 include noise elements such as chopping noise and quantization noise generated internally. Therefore, be sure to restrict the output frequency to the required bandwidth by adding a low-pass filter function (an RC filter with R =10 k and C = 150 pF, for example) to the operational amplifier (post amplifier) in the next stage to the PS8551. 3. Avoid storage at a high temperature and high humidity. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 15 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Chapter Title SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Dielectric strength Spec. Unit 40/085/21 UIORM Upr 1 130 1 695 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr 2 119 Vpeak Highest pe rmissible overvoltage UTR 8 000 Vpeak maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.5 x UIORM, Pd < 5 pC Upr = 1.875 x UIORM, Pd < 5 pC Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg -55 to +125 C Operating temperature range TA -40 to +85 C Ris MIN. Ris MIN. 10 11 10 Package temperature Tsi 175 Power (output or total power dissipation) Psi 700 mW 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25C VIO = 500 V dc at TA MAX. at least 100C 12 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Current (input current IF, Psi = 0) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Isi Ris MIN. 400 9 C mA Page 16 of 17 A Business Partner of Renesas Electronics Corporation. PS8551L4 Caution Chapter Title GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. R08DS0039EJ0200 Rev.2.00 Sep 06, 2011 Page 17 of 17 Revision History PS8551L4 Data Sheet Rev. Date Page - 1.00 Sep 2007 Jun 14, 2011 - Throughout Throughout p.3 p.4 2.00 Sep 06, 2011 p.5 p.6 pp.7 to 9 pp.10, 11 p.13 p.15 p.16 p.3 p.5 Description Summary Previous No. :PN10670EJ01V0DS Preliminary Data Sheet -> Data Sheet Safety standards approved Modification of MARKING EXAMPLE Addition of ORDERING INFORMATION Modification of ABSOLUTE MAXIMUM RATINGS Modification of RECOMMENDED OPERATING CONDITIONS Modification of ELECTRICAL CHARACTERISTICS (DC Characteristics) Modification of SWITCHING CHARACTERISTICS (ADC Characteristics) Addition of TEST CIRCUIT Addition of TYPICAL CHARACTERISTICS Addition of RECOMMENDED MOUNT Modification of USAGE CAUTIONS Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Modification of MARKING EXAMPLE Modification of ELECTRICAL CHARACTERISTICS (DC Characteristics) CMRRIN All trademarks and registered trademarks are the property of their respective owners. C-1