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The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1. V
DD
1
2. V
IN+
3. V
IN
–
4. GND1
5. GND2
6. V
OUT
–
7. V
OUT+
8. V
DD
2
PIN CONNECTION
(Top View)
1 2 43
6 58 7
SHIELD
+
–
+
–
Preliminary
Data Sheet
PS8551L4
ANALOG OUTPUT TYPE
OPTICAL COUPLED ISOLATION AMPLIFIER
DESCRIPTION
The PS8551L4 is an optically coupled isolation amplifier that uses an IC with a high-accuracy sigma-delta A/D
converter and a GaAIAs light-emitting diode with high-speed response and high luminance efficiency on the input side,
and an IC with a high-accuracy D/A converter on the output side.
The PS8551L4 is designed specifically for high common mode transient immunity (CMTI) and high linearity (non-
linearity). The PS8551L4 is suitable for current sensing in motor drives.
FEATURES
• Non-linearity (NL200 = 0.35% MAX.)
• High common mode transient immunity (CMTI = 10 kV/
μ
s MIN.)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• Gain tolerance (G = 7.76 to 8.24 (±3%))
Gain: 8 V/V TYP.
• Package: 8-pin DIP lead bending type (Gull-wing) for long creepage distance for
surface mount (L4)
• Embossed tape product: PS8551L4-E3 : 1 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved: No. 1111155
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40019182 (Option)
APPLICATIONS
• AC Servo, inverter
• Measurement equipment
R08DS0039EJ0200
Rev.2.00
Sep 06, 2011
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PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Long Creepage Distance For Surface Mount (L4)
9.25
+0.5
–0.25
6.5
+0.5
–0.1
10.05±0.4
0.62±0.25
0.2±0.15
3.7±0.35
3.5±0.2
1.01
+0.4
–0.2
2.54
0.5±0.15
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
mm 8 ecnatsiD riA
Outer Creepage Distance 8 mm
mm 4.0 ecnatsiD noitalosI
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MARKING EXAMPLE
R
8551
NT131
No. 1 pin
Mark
131
Year Assembled
(Last 1 Digit)
TN
Rank Code
In-house Code
(T: Pb-Free)
Week Assembled
Assembly Lot
Type Number
Company Initial
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application Part
Number*1
PS8551L4 PS8551L4-AX Pb-Free Magazine case 50 pcs Standard products PS8551L4
PS8551L4-E3 PS8551L4-E3-AX (Ni/Pd/Au) Embossed Tape 1 000 pcs/reel (UL, CSA, SEMKO
approved)
PS8551L4-V PS8551L4-V-AX Magazine case 50 pcs DIN EN60747-5-2
PS8551L4-V-E3 PS8551L4-V-E3-AX Embossed Tape 1 000 pcs/reel (VDE0884 Part2)
Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
<R>
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Operating Ambient Temperature TA −40 to ＋85 °C
Storage Temperature Tstg −55 to＋125 °C
V egatloV ylppuS DD1, VDD2 0 to 5.5 V
V egatloV tupnI IN+, VIN− −2 to VDD1＋0.5 V
2 Seconds Transient Input Voltage VIN+, VIN− −6 to VDD1＋0.5 V
V egatloV tuptuO OUT+, VOUT− −0.5 to VDD2＋0.5 V
Isolation Voltage*1 .s.m.rV 000 5 VB
*1 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-4 shorted together, 5-8 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. MAX. Unit
Operating Ambient Temperature TA −40 85 °C
V egatloV ylppuS DD1, VDD2 4.5 5.5 V
Input Voltage
(Accurate and Linear) *1
VIN+, VIN− −200 200 mV
*1 Using VIN− = 0 V (to be connected to GND1) is recommended. Avoid using VIN− of 2.5 V or more, because the
internal test mode is activated when the voltage VIN− reaches more than 2.5 V.
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ELECTRICAL CHARACTERISTICS (DC Characteristics)
(TYP.: TA = 25°C, VIN+ = VIN− = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
V egatloV tesffO tupnI os TA = 25°C −2 0.3 2 mV
−3 3
Input Offset Voltage Drift
vs. Temperature
⏐dVos/dTA⏐ TA = 25 to +85°C 3 10
μ
V/°C
Gain *1 G −200 mV ≤ VIN+ ≤ 200 mV,
TA = 25°C
7.76 8 8.24 V/V
Gain Drift vs. Temperature ⏐dG/dTA⏐V/V 78000.0 °C
VOUT Non-linearity (200 mV) *2 NL200 −200 mV ≤ VIN+ ≤ 200 mV 0.021 0.35 %
VOUT Non-linearity (200 mV) Drift
vs. Temperature
⏐
dNL200/dTA
⏐
/% 2000.0 °C
VOUT Non-linearity (100 mV) *2 NL100 −100 mV ≤ VIN+ ≤ 100 mV 0.014 0.2 %
Maximum Input Voltage before VOUT
Clipping
⏐VIN+⏐ Vm 803 .XAM
I tnerruC ylppuS tupnI DD1 VIN+ Am 02 61 Vm 004 =
Output Supply Current IDD2 VIN+ = − Am 61 01 Vm 004
I tnerruC saiB tupnI IN+ VIN+ V0 = −0.5 5
μ
A
Input Bias Current Drift
vs. Temperature
⏐dIIN+/dTA⏐/An 54.0 °C
Low Level Saturated Output Voltage VOL VIN+ = − V 92.1 Vm 004
High Level Saturated Output Voltage VOH VIN+ V 8.3 Vm 004 =
Output Voltage (VIN+ = VIN− = 0 V) VOCM VIN+ = VIN− V 8.2 55.2 2.2 V 0 =
Output Short-circuit Current ⏐IOSC⏐ Am 6.81
Equivalent Input Resistance RIN k 023 Ω
VOUT Output Resistance ROUT 51 Ω
Input DC Common-Mode Rejection
Ratio*3
CMRRIN Bd 67
*1 The differential output voltage (VOUT+ − VOUT−) with respect to the differential input voltage (VIN+ − VIN−), where VIN+ =
−200 mV to 200 mV and VIN− = 0 V) is measured under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon
the resulting chart, the gain is defined as the slope of the optimum line obtained by using the method of least
squares.
*2 The differential output voltage (VOUT+ − VOUT−) with respect to the differential input voltage (VIN+ − VIN−) is measured
under the circuit shown in Fig. 2 NL200, G Test Circuit. Upon the resulting chart, the optimum line is obtained by
using the method of least squares. Non-linearity is defined as the ratio (%) of the optimum line obtained by dividing
[Half of the peak to peak value of the (residual) deviation] by [full-scale differential output voltage].
For example, if the differential output voltage is 3.2 V, and the peak to peak value of the (residual) deviation is 22.4
mV, while the input VIN+ is ±200 mV, the output non-linearity is obtained as follows:
NL200 = 22.4/(2 × 3 200) = 0.35%
*3 CMRRIN is defined as the ratio of the differential signal gain (when the differential signal is applied between the
input pins) to the common-mode signal gain (when both input pins are connected and the signal is applied). This
value is indicated in dB.
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ELECTRICAL CHARACTERISTICS (AC Characteristics)
(TYP.: TA = 25°C, VIN+ = VIN− = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
VOUT Bandwidth (−3 dB) fC VIN+ = 200 mVp-p, sine wave 50 100 kHz
VOUT N esioN OUT VIN+.s.m.rVm 5.13 V 0 =
VIN to VOUT Signal Delay (50 to 10%) tPD10 VIN+ = 0 to 150 mV step 2.03 3.3
μ
s
VIN to VOUT Signal Delay (50 to 50%) tPD50 6.5 10.4
VIN to VOUT Signal Delay (50 to 90%) tPD90 9.9 20.6
VOUT Rise Time/Fall Time (10 to 90%) tr/tf VIN+ = 0 to 150 mV step 3.53 6.6
μ
s
Common Mode Transient Immunity*1 CMTI VCM = 0.5 kV, TA = 25°C 10 25 kV/
μ
s
Power Supply Noise Rejection*2 .s.m.rVm 001 zHM 1 = f RSP
*1 CMTI is tested by applying a pulse that rises and falls suddenly (VCM = 0.5 kV) between GND1 on the input side
and GND2 on the output side (pins 4 and 5) by using the circuit shown in Fig. 9 CMTI Test Circuit. CMTI is
defined at the point where the differential output voltage (VOUT+ − VOUT−) fluctuates 200 mV (>1
μ
s) or more from the
average output voltage.
*2 This is the value of the transient voltage at the differential output when 1 Vp-p, 1 MHz, and 40 ns rise/fall time
square wave is applied to both VDD1 and VDD2.
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TEST CIRCUIT
Fig. 1 VOS Test Circuit
Fig. 2 NL200, G Test Circuit
Fig. 3 IDD I 4 .giFtiucriC tseT 1 DD2 Test Circuit
V
DD1
V
DD2
10 kΩ
10 kΩ
0.1 F
μ
SHIELD
+
–
+
–
0.1 F
μ
0.47 F
μ
0.47 F
μ
V
OUT
+15 V
–15 V
0.1 F
μ
0.1 F
μ
AD624CD
(x100)
V
DD1
V
IN
V
DD2
10 kΩ
10 kΩ
0.1 F
μ
SHIELD
+
–
+
–
0.1 F
μ
0.47 F
μ
0.01 F
μ
0.47 F
μ
0.47 F
μ
10 kΩ
13.2 Ω
404 Ω
+15 V
–15 V
0.1 F
μ
0.1 F
μ
AD624CD
(x4) V
OUT
+15 V
–15 V
0.1 F
μ
0.1 F
μ
AD624CD
(x10)
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
0.01 F
μ
SHIELD
+
–
+
–
1
5 V
I
DD
1
400 mV
2
3
4
8
7
6
5
0.1 F
μ
0.01 F
μ
SHIELD
+
–
+
–
1
5 V
–
400 mV
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
5 V
I
DD
2
−
+
−
+
−
+
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Fig. 5 I
IN+
Test Circuit
Fig. 6 V
OUT
Test Circuit
V
OL
V
OCM
V
OH
0.01 F
μ
SHIELD
+
–
+
–
1
–
400 mV
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
V 5V 5
0.01 F
μ
SHIELD
+
–
+
–
1
5 V
I
IN+
2
3
4
8
7
6
5
0.1 F
μ
V
OL
0.01 F
μ
SHIELD
+
–
+
–
1
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
V 5V 5
V
OCM
0.01 F
μ
SHIELD
+
–
+
–
1
400 mV
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
V 5V 5
V
OH
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Fig. 7 |I
OSC
| Test Circuit
Fig. 8 t
PD
Test Circuit
Fig. 9 CMTI Test Circuit
V
DD1
V
IN
V
DD2
2 kΩ
10 kΩ
2 kΩ
0.1 F
μ
SHIELD
+
–
+
–
0.1 F
μ
0.01 F
μ
+15 V
–15 V
0.1 F
μ
0.1 F
μ
NE5534
V
OUT
1
2
3
4
8
7
6
5
I
OSC
0.01 F
μ
SHIELD
+
–
+
–
1
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
5 V
9 V
78L05
5 V
I
OSC
0.01 F
μ
SHIELD
+
–
+
–
1
2
3
4
8
7
6
5
0.1 F
μ
0.1 F
μ
V 5V 5
10 kΩ
V
DD2
2 kΩ
2 kΩ
0.1 F
μ
0.1 F
μ
SHIELD
+
–
+
–
0.1 F
μ
PC813
V
OUT
1
2
3
4
8
7
6
5
10 kΩ
150 pF
10 kΩ
150 pF
IN OUT
V
CM
+15 V
–15 V
–+
0.1 F
μ
0.1 F
μ
μ
+
−
+
−
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TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
3
2
1
0
−1
−2
−34.5 4.7555.25 5.5–50 –25 0 25 50 75 100
–50 –25 0 25 50 75 100
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
Ambient Temperature TA (°V egatloV ylppuS)C DD (V)
Supply Voltage VDD (V)
Input Offset Voltage VOS (mV)
Input Offset Voltage VOS (mV)
INPUT OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
INPUT OFFSET VOLTAGE vs.
SUPPLY VOLTAGE
Ambient Temperature TA (°C)
Gain G (V/V)
Gain G (V/V)
EGATLOV YLPPUS .sv NIAGERUTAREPMET TNEIBMA .sv NIAG
NON-LINEARITY vs.
AMBIENT TEMPERATURE
NON-LINEARITY vs.
SUPPLY VOLTAGE
Non-linearity NL200 (%)
Supply Voltage VDD (V)Ambient Temperature TA (°C)
Non-linearity NL200 (%)
2
1.5
1
0.5
0
−0.5
−1
−1.5
−2
8.24
8.2
8.16
8.12
8.08
8.04
8
7.96
7.92
7.88
7.84
7.8
7.76
8.24
8.2
8.16
8.12
8.08
8.04
8
7.96
7.92
7.88
7.84
7.8
7.76
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
VDD1 = VDD2 = 5 V
VIN+ = −200 mV to +200 mV,
VIN− = 0 V
VDD1 = VDD2 = 5 V
VIN+ = −200 mV to +200 mV,
VIN− = 0 V
VDD1 = VDD2 = 5 V
VIN+ = VIN− = 0 V
VIN+ = VIN− = 0 V
VIN+ = −200 mV to +200 mV,
VIN− = 0 V
VIN+ = −200 mV to +200 mV,
VIN− = 0 V
VDD2
VDD1
VDD1
VDD1
VDD2
VDD2
–50 –25 0 25 50 75 100
4.5 4.7555.25 5.5
4.5 4.7555.25 5.5
Remark The graphs indicate nominal characteristics.
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4
3.5
3
2.5
2
1.5
1
−50 −25 0 25 50 75 100
10 100 1 000 10 000 100 000 1 000 000
7
6
5
4
3
2
1
0
Input Voltage VIN V egatloV tupnI)V( IN (V)
Frequency f (Hz)
Output Voltage VO (V)
Supply Current IDD (mA)
INPUT VOLTAGE vs. OUTPUT VOLTAGE SUPPLY CURRENT vs. INPUT VOLTAGE
Input Voltage VIN+ (V)
Input Current IIN+ ( A)
Gain GV (dB)
YCNEUQERF .sv NIAGEGATLOV TUPNI .sv TNERRUC TUPNI
PHASE vs. FREQUENCY
SIGNAL DELAY TIME vs.
AMBIENT TEMPERATURE
Phase (Deg.)
Ambient Temperature TA (°C)Frequency f (Hz)
Signal Delay Time PD ( s)
20
18
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
−1
−2
−3
−4
−5
1
0
−1
−2
−3
−4
−5
−6
−7
−8
50
0
−50
−100
−150
−200
VDD1 = VDD2 = 5 V
VIN− = 0 V
VDD1 = VDD2 = 5 V, VIN− = 0 V
VIN+ = 0 to 150 mV step
VDD1 = VDD2 = 5 V, VIN− = 0 V
VIN+ = 200 mVp−p sine wave
VDD1 = VDD2 = 5 V,
VIN− = 0 V
VIN+ = 200 mVp−p sine wave
VDD1 = VDD2 = 5 V
VDD1 = VDD2 = 5 V
VOUT+
IDD2
IDD1
VOUT−
−0.4 −0.2 0 0.2 0.4−0.4 −0.2 0 0.2 0.4
−0.4 −0.2 0 0.2 0.4
10 100 1 000 10 000 100 000 1 000 000
tPD10
tr
tPD50
tPD90
μ
μ
Remark The graphs indicate nominal characteristics.
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TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.65 MAX.
9.95±0.1
12.0±0.1
1.5
+0.1
–0
7.5±0.1
10.55±0.1
16.0±0.3
4.2±0.1
0.3±0.05
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Tape Direction
PS8551L4-E3
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RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
D
C
B
A
Part Number
PS8551L4
Lead Bending A
lead bending type (Gull-wing)
for surface mount 9.0
B
2.54
C
1.7
D
2.0
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NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
062 erutarepmet wolfer kaeP •°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
eerhT swolfer fo rebmuN •
a htiw xulf ehT( enirolhc fo tnuoma llams gniniatnoc xulf nisoR xulF •
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content
of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
a htiw xulf ehT( enirolhc fo tnuoma llams gniniatnoc xulf nisoR xulF •
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
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(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1
μ
F is used between VCC and GND near device. Also, ensure that the
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) Keep the pattern connected the input (VIN+, VIN−) and the output (VOUT+, VOUT−), respectively, as short as
possible.
(3) Do not connect any routing to the portion of the frame exposed between the pins on the package of the
photocoupler. If connected, it will affect the photocoupler's internal voltage and the photocoupler will not
operate normally.
(4) Because the maximum frequency of the signal input to the photocoupler must be lower than the allowable
frequency band, be sure to connect an anti-aliasing filter (an RC filter with R = 68 Ω and C = 0.01
μ
F, for
example).
(5) The signals output from the PS8551 include noise elements such as chopping noise and quantization noise
generated internally. Therefore, be sure to restrict the output frequency to the required bandwidth by adding a
low-pass filter function (an RC filter with R =10 kΩ and C = 150 pF, for example) to the operational amplifier
(post amplifier) in the next stage to the PS8551.
3. Avoid storage at a high temperature and high humidity.
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SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
tinU .cepS lobmyS retemaraP
12/580/04 )1-86006 NE NID/1-86006 CEI( ssalc tset citamilC
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
UIORM
Upr
1 130
1 695
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr 2 119 Vpeak
U egatlovrevo elbissimrep tsehgiH TR 8 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 2 )1 traP
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
a III )1 traP 0110EDV 1-46606 NE NID( puorg lairetaM
T egnar erutarepmet egarotS stg –55 to +125 °C
T egnar erutarepmet gnitarepO A –40 to +85 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
A Business Partner of Renesas Electronics Corporation.
PS8551L4 Chapter Title
71 fo 71 egaP 00.2.veR 0020JE9300SD80R
Sep 06, 2011
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
A Business Partner of Renesas Electronics Corporation.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History PS8551L4 Data Sheet
Description
Rev. Date Page Summary
− Sep 2007 − Previous No. :PN10670EJ01V0DS
1.00 Jun 14, 2011 Throughout Preliminary Data Sheet -> Data Sheet
Throughout Safety standards approved
p.3 Modification of MARKING EXAMPLE
Addition of ORDERING INFORMATION
p.4 Modification of ABSOLUTE MAXIMUM RATINGS
Modification of RECOMMENDED OPERATING CONDITIONS
p.5 Modification of ELECTRICAL CHARACTERISTICS (DC Characteristics)
p.6 Modification of SWITCHING CHARACTERISTICS (ADC Characteristics)
pp.7 to 9 Addition of TEST CIRCUIT
pp.10, 11 Addition of TYPICAL CHARACTERISTICS
p.13 Addition of RECOMMENDED MOUNT
p.15 Modification of USAGE CAUTIONS
p.16 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
2.00 Sep 06, 2011 p.3 Modification of MARKING EXAMPLE
p.5 Modification of ELECTRICAL CHARACTERISTICS (DC Characteristics) CMRRIN
