DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2S5K1585 N-CHANNEL MOS FET FOR SWITCHING The 2SK1585 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS (Unit : mm) driven by 2.5 V power supply. 45+0.1 As the MOS FET is driven by low voltage and does not require con- 1.6+0.2 15+0.1 sideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving. s| & 5 +H $ FEATURES tol o z 1 3 fal o . : . St + Directly driven by ICs having a 3 V power supply. 00 | ba6 0.42+0.06 Has | stat ist or Ys Hoe. as low on-state resistance. 3.0 0.41903 Rpston)1 = 1.2 & MAX. @ Ves = 2.5 V, Ip =0.5A , Roston)2 = 1.0 Q MAX. @ Ves =4.0 V, Ip =O0.5A Drain (D) QUALITY GRADE 1. Source 2. Drain Standard 3. Gate MARK: NE Gate (G) Please refer to Quality grade on NEC Semiconductor Devices o (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Source (S) (Diode in the figure is the parasitic diode.) ABSOLUTE MAXIMUM RATINGS (Tg = 25 c) PARAMETER SYMBOL RATINGS UNIT TEST CONDITIONS Drain to Source Voltage Voss . 16 Vv Ves =90 Gate to Source Voltage Vo6ss +16 Vv Vps=0 Drain Current Ip(pec) +1.0 A Drain Current !D(pulse) +2.0 A PW <10 ms, Duty Cycle S 50 % ae When using ceramic board of Total Power Dissipation Py 2.0 Ww 16 em? x0.7 mm Channel Temperature Teh 150 C Operating Temperature Topt 55 to +80 C Storage Temperature Tstg 5 to +150 C Document No. TC2350A (0.D.No. TC7736B) Date Published November 1994 M Printed in Japan NEC Corporation 1991NEC 2SK1585 ELECTRICAL CHARACTERISTICS (Ta = 25 C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Cut-off Current Ipss 1.0 uA Vps = 16 V, Vgsg =0 Gate Leakage Current IGss +5.0 uA VGgs 7 +16 V, Vpg = 0 Gate Cut-off Voltage VGS(off) 0.8 1.2 16 Vv Vps=5V,Ip=imA Forward Transfer Admittance Veg! 04 1.0 s Vos =5V.Ip=0.5A Drain to Source On-State Resistance Rps(on)1 06 1.2 2 V6s=2.5V,Ip=0.5A Drain to Source On-State Resistance Rps{on)2 0.3 1.0 2 V6e6s-=40V,Ip=0.5A Input Capacitance Ciss 116 pF Output Capacitance Coss 107 pF Vos =3 V. Ves = 0, f = 1 MHz Feedback Capacitance Cregg 27 pF Turn-On Delay Time td(on) 80 ns Rise Time ty 260 ns VGs(on) = 3 V, Rg = 10 2 Turn-Off Delay Time tdloff) 145 ns Roe 6 30 V.ID= 0.54 Fall Time ; te 140 ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS Ves R Gate 90 % DUT L Voltage 10% V@s(on) \ Wave- 0 - form VDD . Ip 90% Re F 90% PG. | Drain 109 D \ s Current % 410% Wave- V@s form 0 td(on) tr td(off) tf z ton toff r=l1 ys Duty Cycles1% TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 10 5 100 IN 5 ID(pulse) 45 80 ~ 1 0.5 i s 8 Nn g aL 5 wm 60 e 5 = E o2per _ _ oD a 40 } Ol oO E BD 0.05 20 N \ 0.02 [Ta=25 C N Single Pulse 0.01 0 20 40 60 80 100 120 140 160 0102 O58 1 2 5 10 20 50 100 Tc Case TemperatureC Vps Drain to Source VoltageVNEC 2SK1585 lygg|Forward Transfer AdmittancemS TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 When using ceramic board of 16 cm?x0.7 mm = : | 2.0 I cS 2 3 Roe 8 1.5 I Q 3 & Oo. 1.0 s 8 3 1 bk 0.5 o 0 30 60 90 120 150 180 TaAmbient Temperature"C TRANSFER CHARACTERISTICS 1000 Vos=5V Pulse measurement x 100 E { ~ & 2 a 10 c g a | Poi 0.1 VgsGate to Source VoitageV FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10000 Vps5.0V Pulse measurement 1000 100 10 1 3 10 30 100 300 1000 Ip Drain CurrentmA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulse 3.0V measurement 2.5V Ip Drain CurrentA 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Vps--Drain to Source VoltageV GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 3 Vps=5V Ip=1mA 7 av ao 2 2 2 9 35 o 2 ta) & aa I 1 pe] S. Oo > 0 ~30 0 30 60 90 120 150 TchChannel Temperature C ORAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 15 Ip=O.5A Pulse measurement NX RpS(on) Drain te Source On-State Resistance 0 0 5 10 15 Vas Gate to Source Voltage V2SK1585 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Vas=2.5V Pulse measurement RDS(on)~ Drain to Source On-State Resistance 0 10 30 100 300 1000 IpDrain CurrentmA CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ves=90 f=1MHz 100 10 Ciss, Cass, Crss Capacitance -- pF 0.1 0.3 1 3 10 30 100 Vps- Drain to Source VoltageV SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Ves=0 Pulse measurement 100 10 Isp Source to Drain Current mA 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Vsp- Source to Drain VoltageV RDS(on) Drain to Source On-State Resistance Q td(on), tr, td(off), tt -Switching Timens 1.5 1.0 0.5 ee DRAIN TO SOURCE ON-STATE.RESISTANCE vs. CHANNEL TEMPERATURE Ip=0.5A Pulse measurement | 25V Lee | Vos=40V te = a 30 0 30 60 90 120 150 Tch Channel Temperature C a SWITCHING CHARACTERISTICS 1000 300 100 30 10 Vpp=3V VGs=3V Rq=102 td(off) tf tr 30 100 300 1000 Ip Drain Current -mANEC 2SK1585 ~ RECOMMENDED SOLDERING CONDITIONS Mounting of this product by soldering should be done under the following conditions. Please consult our representatives about soldering methods and conditions other than these. SURFACE MOUNT TYPE For details of the recommended soldering conditions, see the information document SMT MANUAL (IEI-1207). Symbol for Soldering Method Soldering Conditions Recommended Conditions Package peak temp.: 230 C Infrared Reflow Soldering time: within 30 sec (above 210 C) 1R30-00 Soldering times: 1, Days limitation: none* Package peak temp.: 215 C Vapor Phase Soldering Soldering time: within 40 sec (above 200 C) VP15-00 Soldering times: 1, Days limitation: none* Soldering bath temp.: below 260 C Wave Soldering Soldering time: within 10 sec WS60-00 Ne Soldering times: 1, Days limitation: none* *: Stored days under storage conditions at 25 C and below 65 % R.H. after the dry-pack has been opened. _ Note 1 Combination of soldering methods should be avoided. REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TE!-1202 Quality grade on NEC semiconductor devices. 1E1-1209 Semiconductor device mounting technology manual. 1E1-1207 Semiconductor device package manual. IEH-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134NEC 2SK1585 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6