AUIRFZ44NS
AUIRFZ44NL
HEXFET® Power MOSFET
08/29/11
www.irf.com 1
S
D
G
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
GDS
Gate Drain Source
V
(BR)DSS
55V
R
DS(on)
max. 17.5mΩ
I
D
49A
D2Pak
AUIRFZ44NS
TO-262
AUIRFZ44NL
S
D
G
D
D
S
G
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally Limited)
Single Pulse Avalanche Energy
h
E
AS
(tested)
g
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.5
R
θ
JA
Junction-to-Ambient ––– 40
mJ
530
9.4
300 (1.6mm from case )
3.8
25
-55 to + 175
150
W
°C/W
94
Max.
49
35
160
0.63
±20
5.0
PD-96391A
AUIRFZ44NS/L
2www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH, RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Notes:
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 19 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 25 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– ––– 63
Q
gs
Gate-to-Source Charge ––– ––– 14 nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 23
t
d(on)
Turn-On Delay Time ––– 12 –––
t
r
Rise Time –––60–––
t
d(off)
Turn-Off Delay Time ––– 44 ––– ns
t
f
Fall Time –––45–––
L
D
Internal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance from package
and center of die contact
C
iss
Input Capacitance ––– 1470 –––
C
oss
Output Capacitance ––– 360 –––
C
rss
Reverse Transfer Capacitance ––– 88 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 63 95 ns
Q
rr
Reverse Recovery Charge ––– 170 260
n
C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
49
160
A
–––
–––
–––
–––
––––––
4.5
7.5
I
D
= 25A
R
G
= 12Ω
––– –––
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
=55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 10V, See Fig.10
f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
pF
V
DS
= 25V, I
D
= 25A
f
I
D
= 25A
V
DS
= 44V
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V,See Fig 6 and 13
V
DD
= 28V
AUIRFZ44NS/L
www.irf.com 3
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
Moisture Sensitivity Level 3L-D2
PAK MSL1
3L-TO-262
N/A
Human Body Model Class H1B(+/- 1000V )
†††
(per AEC-Q101-001)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Charged Device Model Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
RoHS Compliant Yes
ESD
Machine Model Class M3(+/- 400V )
†††
(per AEC-Q101-002)
AUIRFZ44NS/L
4www.irf.com
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20μs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 41A
D
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20μs PULSE WIDTH
T = 25°C
C
A
4.5V
TJ = 25°C
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20μs PULSE WIDTH
T = 175°C
C
TJ = 175°C
AUIRFZ44NS/L
www.irf.com 5
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
2000
2500
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 10203040506070
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
DS
DS
I = 25A
D
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRFZ44NS/L
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRFZ44NS/L
www.irf.com 7
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
QG
QGS QGD
VG
Charge
VGS
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
I
TOP 10A
18A
BOTTOM 25A
A
Starting T , Junction Temperature (°C)
V = 25V
D
DD
AUIRFZ44NS/L
8www.irf.com
Fig 14. For N-channel HEXFET® power MOSFETs
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
AUIRFZ44NS/L
www.irf.com 9
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUFZ44NS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFZ44NS/L
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUFZ44NL
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFZ44NS/L
www.irf.com 11
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRFZ44NS/L
12 www.irf.com
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFZ44NL
TO-262
Tube
50
AUIRFZ44NL
AUIRFZ44NS D2Pak Tube 50 AUIRFZ44NS
Tape and Reel Left 800 AUIRFZ44NSTRL
Tape and Reel Right 800 AUIRFZ44NSTRR
AUIRFZ44NS/L
www.irf.com 13
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the
time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105