CLA50E1200HB
Single Thyristor
High Efficiency Thyristor
2 1
3
Part number
CLA50E1200HB
Backside: anode
TAV
T
VV1.27
RRM
50
1200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20121221gData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
CLA50E1200HB
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.32
R0.25 K/W
min.
50
VV
50T = 25°C
VJ
T = °C
VJ
mA4V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
125
P
tot
500 WT = 25°C
C
50
1200
forward voltage drop
total power dissipation
Conditions Unit
1.60
T = 25°C
VJ
125
V
T0
V0.88T = °C
VJ
150
r
T
7.7 mΩ
V1.27T = °C
VJ
I = A
T
V
50
1.65
I = A100
I = A100
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA79
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
25
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
650
700
1.54
1.48
A
A
A
A
555
595
2.12
2.04
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
=0.3
di /dt A/µs;
G
=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
50 mA
T= °C-40
VJ
1.6 V
80 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 3mA
V = ⅔ V
D DRM
150
latching current T= °C
VJ
125 mAI
L
25tµs
p
=10
IA;
G
= 0.3 di /dt A/µs
G
=0.3
holding current T= °C
VJ
100 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay time T= °C
VJ
2µst
gd
25
IA;
G
= 0.3 di /dt A/µs
G
=0.3
V = ½ V
D DRM
turn-off time T= °C
VJ
200 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
=50 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 50 A
T
150
R
thCH
thermal resistance case to heatsink K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive revers e/forward blockin g volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20121221gData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
CLA50E1200HB
Ratings
000000
YYWWZ
Logo
Part Number
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
C
L
A
50
E
1200
HB
Part number
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Single Thyristor
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
150-40
TO-247
Similar Part Package Voltage class
CLA50E1200TC TO-268AA (D3Pak) (2) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
CLA50E1200HB 503748Tube 30CLA50E1200HBStandard
threshold voltage V0.88
mΩ
V
0 max
R
0 max
slope resistance * 5.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20121221gData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
CLA50E1200HB
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
2 1
3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20121221gData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
CLA50E1200HB
04080120160
0
10
20
30
40
50
60
70
80
10 100 1000
1
10
100
1000
0.01 0.1 1
100
200
300
400
500
600
0.00.51.01.52.02.5
0
30
60
90
120
150
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
I
T
[A]
t[s]
V
T
[V]
23456789011
100
1000
10000
I
2
t
[A
2
s]
t[ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
=125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
=125°C
T
VJ
=45°C
V
R
=0 V
V
G
[V]
I
G
[mA]
I
TAVM
[A]
T
case
[°C]
[K/W]
[s]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
T
Fig. 6 Max. forward current at
case temperature
Fig. 8Transient thermal impedance junction to case
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 102030
0
10
20
30
40
50
60
I
F(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
04080120160
T
amb
[°C]
T
VJ
=125°C
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=125°C
1 10 100 1000 10000
0.1
1
10
4: P
GAV
=0.5W
5: P
GM
=1W
6: P
GM
=10W
1: I
GD
,T
VJ
= 150°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
iR
thi
(K/W) t
i
(s)
1 0.075 0.0011
20.17 0.0019
3 0.057 0.0115
4 0.158 0.12
50.0105 0.5
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20121221gData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
