ES3DHE3/57T - Vishay [General Semiconductor]

ES3A thru ES3D

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Revision: 14-Mar-12 1Document Number: 88589

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 50 V to 200 V

IFSM 100 A

trr 20 ns

VF0.90 V

TJ max. 150 °C

DO-214AB (SMC)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT

Device marking code EA EB EC ED

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V

Maximum RMS voltage VRMS 35 70 105 140 V

Maximum DC blocking voltage VDC 50 100 150 200 V

Maximum average forward rectified current at TL = 100 °C IF(AV) 3.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 100 A

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

ES3A thru ES3D

www.vishay.com Vishay General Semiconductor

Revision: 14-Mar-12 2Document Number: 88589

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1) Units mounted on P.C.B. with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL ES3A ES3B ES3C ES3D UNIT

Maximum instantaneous

forward voltage 3.0 A VF (1) 0.90 V

Maximum DC reverse current at

rated DC blocking voltage

TA = 25 °C IR

10 µA

TA = 100 °C 500

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns

Maximum reverse recovery time IF = 3.0 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C trr

30 ns

TJ = 100 °C 50

Maximum stored charge IF = 3.0 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C Qrr

15 nC

TJ = 100 °C 35

Typical junction capacitance 4.0 V, 1 MHz CJ45 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT

Typical thermal resistance RJA (1) 47 °C/W

RJL (1) 12

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel

ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel

ES3DHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel

ES3DHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel

3.0

80 90 100 110 120 130 140 150

Average Forward Rectified Current (A)

Lead Temperature (°C)

2.0

1.0

Resistive or Inductive Load

P.C.B. Mounted on

0.31" x 0.31" (8.0 mm x 8.0 mm)

Copper Pad Areas

100

125

150

1 10010

Peak Forward Surge Current (A)

Number of Cycles at 60 Hz

8.3 ms Single Half Sine-Wave

at T

= 100 °C

ES3A thru ES3D

www.vishay.com Vishay General Semiconductor

Revision: 14-Mar-12 3Document Number: 88589

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.1

100

Instantaneous Forward Current (A)

= 150 °C

= 100 °C

= 25 °C

= 125 °C

0.1 0.3 0.5 0.7 0.9 1.1 1.3

Instantaneous Forward Voltage (V)

0.1

100

1000

10 000

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

0 20406080 100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

Reverse Voltage (V)

Junction Capacitance (pF)

0.1

110 100

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

Cathode Band

DO-214AB (SMC)

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

0.060 (1.52)

0.030 (0.76)

0.103 (2.62)

0.079 (2.06)

Mounting Pad Layout

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.185 (4.69) MAX.

0.320 (8.13) REF.

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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