2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 12, 2000-00
FEATURES
• Very High CTR at
I
F
=1.0 mA,
V
CE
=0.5 V
– SFH618A-2, 63–125%
– SFH618A-3, 100–200%
– SFH618A-4, 160–320%
– SFH618A-5, 250–500%
– SFH628A-2, 63–200%
– SFH628A-3, 100–320%
– SFH628A-4, 160–500%
• Specified Minimum CTR at
I
F
=0.5 mA
– SFH618A,
V
CE
=1.5 V:
≥
32% (typical 120%)
– SFH628A,
V
CE
=1.5 V:
≥
50% (typical 160%)
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage,
V
CEO
=55 V
• Isolation Test Voltage, 5300 V
RMS
• Low Coupling Capacitance
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• End-Stackable, 0.100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option — See SFH6186/6286 Data Sheet
APPLICATIONS
• Telecom
• Industrial Controls
• Battery Powered Equipment
• Office Machines
DESCRIPTION
The SFH618A/628A feature a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sili-
con planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
V
DE
SFH618A/628A
Phototransistor, 5.3 kV TRIOS
Low Current Input
Optocoupler
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)............................................................. 6.0 V
DC Forward Current (SFH628A) ..................................................±50 mA
Surge Forward Current (t
p
≤
10 µs) (SFH628A) ...............................±2.5 A
Total Power Dissipation ................................................................. 70 mW
Detector
Collector-emitter Voltage ................................................................... 55 V
Emitter-collector Voltage................................................................... 7.0 V
Collector Current ............................................................................ 50 mA
Collector Current (t
p
≤
1.0 ms) ....................................................... 100 mA
Total Power Dissipation ............................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ..................................................................... 5300 V
RMS
Creepage Distance ....................................................................
≥
7.0 mm
Clearance ...................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector ..................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ..................................................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...............................................................
≥
10
11
Ω
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................. –55 to +100
°
C
Junction Temperature......................................................................100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ..........................................260
°
C
Dimensions in Inches (mm)
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Collector
Emitter
Anode
Cathode
SFH618A
1
2
4
3
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
SFH628A
1
2
4
3
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 2 March 12, 2000-00
Characteristics
(
T
A
=25
°
C)
Description Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
—1.1 1.5 V
I
F
=5.0 mA
Reverse Current SFH618A
I
R
—.01 10
µ
A
V
R
=6.0 V
Capacitance SFH618A
SFH628A
C
0
—25
45 —pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
—1070 —K/W —
Detector
Collector-emitter Leakage Current
I
CEO
—10 200 nA
V
CE
=10 V
Capacitance C
CE
—7—pF
V
CE
=5.0 V, f=1.0 MHz
Thermal Resistance
R
thJA
—500 —K/W —
Package
Collector-emitter Saturation Voltage SFH618A-2
V
CEsat
—0.25 0.4 V
I
C
=0.32 mA,
I
F
=1.0 mA
SFH618A-3 —0.25 0.4
I
C
=0.5 mA,
I
F
=1.0 mA
SFH618A-4 —0.25 0.4
I
C
=0.8 mA,
I
F
=1.0 mA
SFH618A-5 —0.25 0.4
I
C
=1.25 mA,
I
F
=1.0 mA
Collector-emitter Saturation Voltage SFH628A-2
V
CEsat
—0.25 0.4 V
I
C
=0.5 mA,
I
F
=±1.0 mA
SFH628A-3 —0.25 0.4
I
C
=0.8 mA,
I
F
=±1.0 mA
SFH628A-4 —0.25 0.4
I
C
=1.25 mA,
I
F
=±1.0 mA
Coupling Capacitance —C
C
—0.25 —pF —
Coupling Transfer Ratio SFH618A-2
I
C
/
I
F
63 —125 %
I
F
=1.0 mA,
V
CE
=0.5 V
SFH618A-2 32 75 —
I
F
=0.5 mA,
V
CE
=1.5 V
SFH618A-3
I
C
/
I
F
100 —200 %
I
F
=1.0 mA,
V
CE
=0.5 V
SFH618A-3 50 120 —
I
F
=0.5 mA,
V
CE
=1.5 V
SFH618A-4
I
C
/
I
F
160 —320 %
I
F
=1.0 mA,
V
CE
=0.5 V
SFH618A-4 80 200 —
I
F
=0.5 mA,
V
CE
=1.5 V
SFH618A-5
I
C
/
I
F
250 —500 %
I
F
=1.0 mA,
V
CE
=0.5 V
SFH618A-5 125 300 —
I
F
=0.5 mA,
V
CE
=1.5 V
Coupling Transfer Ratio SFH628A-2
I
C
/
I
F
63 —200 %
I
F
=±1.0 mA,
V
CE
=0.5 V
SFH628A-2 32 100 —
I
F
=±0.5 mA,
V
CE
=1.5 V
SFH628A-3
I
C
/
I
F
100 —320 %
I
F
=±1.0 mA,
V
CE
=0.5 V
SFH628A-3 50 160 —
I
F
=±0.5 mA,
V
CE
=1.5 V
SFH628A-4
I
C
/
I
F
160 —500 %
I
F
=±1.0 mA,
V
CE
=0.5 V
SFH628A-4 80 250 —
I
F
=±0.5 mA,
V
CE
=1.5 V
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 3 March 12, 2000-00
Figure 1. Current Transfer Ratio (typ.)
V
CE
=0.5 V, C
TR
=f(
T
A
)
Figure 2. Current Transfer Ratio (typ.)
V
CE
=1.5 V, C
TR
=f(
T
A
)
Figure 3. Diode Forward Voltage
TA=25°C, VF=f(IF)
Figure 4. Diode Forward Voltage
IF=1.0 mA, VF=f(TA)
Figure 5. Transistor Capacitance
TA=25°C, f=1.0 MHz, CCE=f(VCE)
Figure 6. Output Characteristics
TA=25°C, CE=f(VCE, IF)
Figure 7. Permissible Forward Current
Diode IF=f(TA)
Figure 8. Permissible Power
Dissipation Ptot=f(TA)
Figure 9. Switching Times (typ.)
TA=25°C, IF=1.0 mA, VCC=5.0 V
ton, tr, toff, tf=f(RL)
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 4 March 12, 2000-00
Switching Times, typical
VCC=5.0 V, IC=2.0 mA, RL=100 Ω, TA=25°C
Figure 10. Test Circuit—SFH618A
Turn-on Time ton 6.0 µs
Rise Time tr3.5
Turn-off Time toff 5.5
Fall Time tf5.0
Input VOUT
VCC = 5 V
RL
Figure 11. Test Circuit—SFH628A
Figure 12. Test Circuit and Waveforms
±IF
47Ω
RL
IC
VCC
10%
90%
Input Pulse
Output Pulse
tr
ton
tf
toff