© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 2
1Publication Order Number:
NDD03N80Z/D
NDD03N80Z
N‐Channel Power MOSFET
800 V, 4.5 W
Features
•ESD Diode−Protected Gate
•100% Avalanche Tested
•100% Rg Tested
•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 800 V
Continuous Drain Current RqJC ID2.9 A
Continuous Drain Current
RqJC, TA = 100°C
ID1.9 A
Pulsed Drain Current, VGS @ 10 V IDM 12 A
Power Dissipation RqJC PD96 W
Gate−to−Source Voltage VGS ±30 V
Single Pulse Avalanche Energy, ID = 2.5 A EAS 100 mJ
ESD (HBM) (JESD22−A114) Vesd 2300 V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C)
VISO 4500 V
Peak Diode Recovery (Note 1) dv/dt 4.5 V/ns
Continuous Source Current
(Body Diode)
IS3.3 A
Maximum Temperature for Soldering
Leads
TL260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IS = 3.3 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
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See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
MARKING AND ORDERING INFORMATION
V(BR)DSS RDS(ON) MAX
800 V 4.5 W @ 10 V
NDD03N80ZT4G
DPAK
CASE 369AA
NDD03N80Z−1G
IPAK
CASE 369D
N-Channel
G (1)
D (2)
S (3)
123
4
12
3
4
NDD03N80Z
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2
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction−to−Case (Drain) NDD03N80Z RqJC 1.3 °C/W
Junction−to−Ambient Steady State (Note 3) NDD03N80Z
(Note 2) NDD03N80Z−1
RqJA 33
96
2. Insertion mounted
3. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V(BR)DSS VGS =0V, I
D=1mA 800 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJReference to 25°C, ID = 1 mA 870 mV/°C
Drain−to−Source Leakage Current IDSS VDS = 800 V, VGS =0V TJ=25°C 1.0 mA
TJ= 125°C 50
Gate-to-Source Leakage Current IGSS VGS =±20 V ±10 mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VDS =V
GS, ID=50mA3.0 4.1 4.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJReference to 25°C, ID = 50 mA11 mV/°C
Static Drain-to-Source On Resistance RDS(ON) VGS =10V, I
D= 1.2 A 3.7 4.5 W
Forward Transconductance gFS VDS =15V, I
D= 1.2 A 2.1 S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5) Ciss
VDS =25V, V
GS = 0 V, f = 1 MHz
440 pF
Output Capacitance (Note 5) Coss 52
Reverse Transfer Capacitance
(Note 5)
Crss 9.0
Total Gate Charge (Note 5) Qg
VDS = 400 V, ID= 3.3 A, VGS =10V
17 nC
Gate-to-Source Charge (Note 5) Qgs 3.5
Gate-to-Drain (“Miller”) Charge
(Note 5)
Qgd 9.1
Plateau Voltage VGP 6.5 V
Gate Resistance Rg5.5 W
RESISTIVE SWITCHING CHARACTERISTICS (Note 6)
Turn-on Delay Time td(on)
VDD = 400 V, ID= 3.3 A,
VGS =10V, R
G = 0 W
9.0 ns
Rise Time tr7.0
Turn-off Delay Time td(off) 17
Fall Time tf9.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage VSD IS= 3.0 A, VGS =0V TJ=25°C 0.9 1.6 V
TJ= 100°C 0.8
Reverse Recovery Time trr
VGS =0V, V
DD =30V
IS= 3.3 A, di/dt= 100 A/ms
360 ns
Charge Time ta81
Discharge Time tb280
Reverse Recovery Charge Qrr 1.3 mC
4. Pulse Width ≤380 ms, Duty Cycle ≤2%.
5. Guaranteed by design.
6. Switching characteristics are independent of operating junction temperatures.
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TYPICAL CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
6.6 V
VGS = 6.8 V to 10 V
6.4 V
6.0 V
5.8 V
5.6 V
0 5 10 15 20 25
0.0
1.0
2.0
3.0
4.0
5.0
345678910
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
VDS = 25 V
TJ = 150°C
TJ = −55°C
TJ = 25°C
1.0
3.0
5.0
7.0
9.0
11
0.0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Region versus Gate−to−Source
Voltage
ID = 1.2 A
TJ = 25°C
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.5
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
−50 −25 0 25 50 75 100 125 150
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
ID = 1.2 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0.90
0.95
1.00
1.05
1.10
1.15
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
BVDSS, NORMALIZED BREAKDOWN
VOLTAGE (V)
ID = 1 mA
2.5
3.0
6.2 V
5.4 V
5.2 V5.0 V
12
2.0
4.0
6.0
8.0
10
12
6.5
7.0
7.0
VGS = 10 V
TJ = 25°C
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TYPICAL CHARACTERISTICS
0.1
1.0
10.0
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
TJ = 150°C
1
10
100
1000
10000
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 8. Capacitance Variation
TJ = 25°C
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
TJ = 125°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
0 2 4 6 8 10 12 14 16 18 20
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QT
QGD
QGS
VDS = 400 V
ID = 3.3 A
TJ = 25°C
VDS
VGS
1.0
10
100
1000
1 10 100
RG, GATE RESISTANCE (W)
t, TIME (ns)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
td(off)
tf
tr
td(on)
VDD = 400 V
ID = 3 A
VGS = 10 V
0.1
1.0
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
125°C
TJ = 150°C
25°C−55°C
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
IS, SOURCE CURRENT (A)
350
400
450
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.1 1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
10 ms
dc
1 ms
VGS ≤ 30 V
SINGLE PULSE
TC = 25°C
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (s)
R(t) (C/W)
Figure 13. Thermal Impedance (Junction−to−Case)
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
RqJC = 1.3°C/W
Steady State
NDD03N80Z
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6
Table 1. ORDERING INFORMATION
Device Package Shipping†
NDD03N80Z−1G IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDD03N80ZT4G DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
A = Location Code
Y = Year
WW = Work Week
G, H = Pb−Free, Halogen−Free Package
1
Gate
2
Drain 3
Source
4
Drain
YWW
3N
80ZG
4
Drain
2
Drain
1
Gate 3
Source
YWW
3N
80ZG
IPAK DPAK
NDD03N80Z
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7
PACKAGE DIMENSIONS
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
IPAK
CASE 369D
ISSUE C
NDD03N80Z
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8
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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NDD03N80Z/D
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