©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSA1174
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE2 Classific at ion
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -50 mA
IBBase Current -10 mA
PCCollector Power Dissipation 300 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA
ICEO Collector Cut-off Current VCE= -100V, IB=0 -1 µA
IEBO Emitter Cut-off Current VEB= -5V, IC= 0 -50 nA
hFE1
hFE2
DC Current Gain VCE= -6V, IC= -0.1mA
VCE= -6V, IC= -1mA 150
200 500
500 800
VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V
VCE (sat) Collector-Emitter Saturat ion Voltage IC= -10mA, IB= -1mA -0.09 -0.3 V
fTCurrent Gain Bandwidth Product VCE= -6V, IC= -1mA 50 100 MHz
Cob Output Capacitance VCB= -30V, IE= 0, f=1MHz 2 3 pF
NV Noise Voltage 25 40 mV
Classification P F E
hFE2 200 ~ 400 300 ~ 600 400 ~ 800
KSA1174
Audio Frequency Low Noise Amplifier
• Complement to KSC2784
1.Emitter 2. Collector 3. Base
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSA1174
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 -20 -40 -60 -80 -100
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
IB = -0.6µA
IB = -1.4µAIB = -1.2µA
IB = -0.8µA
IB = -0.4µA
IB = -0.2µA
IB = -1.0µA
IB = 0
IC[mA], COLLECT OR CURRENT
VCE[V], CO LL ECTO R- EM ITTER VOLT AG E
0-1-2-3-4-5
0
-2
-4
-6
-8
-10
IB = -8µA
IB = -24µAIB = -20µA
IB = -12µA
IB = -4µA
IB = -16µA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EM ITTER VOLT AGE
-0.01 -0.1 -1 -10 -100
0
200
400
600
800
1000
VCE= -6V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 10I B
VCE(sat)
VBE(sat)
VCE(sat), VBE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
0.1
1
10
IE=0
f = 1MHz
Cob [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE = -6V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IE[mA], COLLECTOR CURRENT
©2002 Fairchild Semiconductor Corporation
KSA1174
Rev. A2, September 2002
Typical Characteristics (Coninued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175 200
0
100
200
300
400
500
600
700
800
Ta[oC], AMBIENT TEMPERATURE
PC[mW], POWER DISSIPATION
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSA1174
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
Datasheet Identification Prod uct St atus Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
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