2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 1
March 2008
2SC3503/KSC3503
NPN Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
Features
• High Voltage : VCEO= 300V
• Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V
• Excellent Gain Linearity for low THD
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
•Complement to 2SA1381/KSA1381.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Device mounted on min imu m pad size
hFE Classification
Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 300 V
BVCEO Collector-Emitter Voltage 300 V
BVEBO Emitter-Base Voltage 5 V
ICCollector Current(DC) 100 mA
ICP Collector Current(Pulse) 200 mA
PCTotal Device Dissipation, TC=25°C
TC=125°C7
1.2 W
W
TJ, TSTG Junction and Stor age Temperature - 55 ~ +150 °C
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 17.8 °C/W
Classification CDEF
hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320
1TO-126
1. Emitter 2.Collector 3.Base
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pul se Width≤300µs, Duty Cycle≤2%
Ordering Information
* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.
2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix ch aracter as p acking meth od.
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdow n Voltage IC = 10µA, IE = 0 300 V
BVCEO Collecto- Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V
ICBO Collector Cut-off Current VCB = 200V, IE = 0 0.1 µA
IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA
hFE DC Current Gain VCE = 10V, IC = 10mA 40 320
VCE(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2mA 0.6 V
VBE(sat) Base-Emitter Saturation Voltage IC = 20mA, IB = 2mA 1 V
fT Current Gain Bandwidth Product VCE = 30V, IC = 10mA 150 MHz
Cob Output Capacitance VCB = 30V, f = 1MHz 2.6 pF
Cre Reverse Transfer Capacitance VCB = 30V, f = 1MHz 1.8 pF
Part Number* Marking Package Packing Method Remarks
2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade
2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade
2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade
2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade
KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade
KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade
KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade
KSC3503FSTU C3503F TO-126 TUBE hFE1 F grade
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
0246810
0
4
8
12
16
20
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 20406080100
0
2
4
6
8
10
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 20
µ
A
I
B
= 10
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLEC TOR-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
VCE = 10V
hFE, DC CURRENT GAIN
IC[mA], COL L ECTOR CUR RENT
0.1 1 10 100
0.01
0.1
1
10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0
20
40
60
80
100
120
140
160
VCE = 10V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10 100 1000
0.1
1
10
100
f = 1MHz
Cob[pF], CAPACI TANCE
VCB[V], COLLECTOR-BASE VOLTAGE
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 4
Typical Characteristics (Continued)
Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product
Figure 9. Safe Operating Area Figure 10. Power Derating
0.1 1 10 100 1000
0.1
1
10
100 f=1MHz
Cre[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100 1000
1
10
100
1000 VCE = 30 V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECT O R CURRENT
1 10 100 1000
1
10
100
1000
DC (T
a
= 25
o
C)
500
µ
s
10ms
1ms
DC (T
c
= 25
o
C)
IC MAX. (Pul se)
IC MAX.
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
TC=125oC
Tc=25oC
PC[W], POWER DISSIPATION
T[oC], TEMPERATURE
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 5
Package Dimensions
3.25
±0.20
8.00
±0.30
ø
3.20
±0.10
0.75
±0.10
#1
0.75
±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60
±0.10
11.00
±0.20
3.90
±0.1
0
14.20MAX
16.10
±0.20
13.06
±0.30
1.75
±0.2
0
(0.50)
(1.00)
0.50
+0.10
–0.05
TO-126
Dimensions in Millimeters
2SC3503/KSC3503 NPN Epitaxial Silicon Transistor2SC3503/KSC3503
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 6
Rev. I31
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Current Transfer Logic™
EcoSPARK®
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QS™
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SuperSOT™-3
SuperSOT™-6
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Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
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