ADN2882 - Analog Devices - Datasheet.Live

4.25 Gbps 3.3V Low Noise

Transimpedance Amplifier

Preliminary Technical Data

ADN2882

Rev. PrD November 04 2004

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FEATURES

Technology: high performance SiGe

Bandwidth: 3.2 GHz minimum

Input noise current density: 10 pA√Hz

Optical sensitivity: −22 dBm

Differential transimpedance: 4000 V/A

Power dissipation: 75 mW

Differential output swing: 250 mV p-p

Input current overload: +3.25 dBm

Output resistance: 50 Ω side

RSSI voltage and current ratio: 0.8V/mA

Low-freq cutoff: 15 kHz

On-chip PD filter: RF = 200 Ω CF = 20 pF

Die size: 0.7 mm × 1.2 mm

APPLICATIONS

4.25 Gbps optical modules

SFF-8472 compliant receivers

PIN/APD-TIA receive optical subassembly

SONET/GbE/FC optical receivers, transceivers, transponders

PRODUCT DESCRIPTION

The ADN2882 is a compact, high performance 3.3 V power

supply SiGe transimpedance amplifier (TIA) optimized for

small form factor 4.25 Gbps metro-access, Ethernet PIN/APD-

TIA modules and 1×/2×/4× Fibre channel receiver applications

and meets OC48 SR/IR sensitivity requirements. The ADN2882

is a single-chip solution for detecting photodiode current with a

differential output voltage. The ADN2882 features low input

referred noise current of 600 nA enabling −22 dBm sensitivity;

3.2 GHz minimum bandwidth enables up to 4.25 Gbps

operation; +3.25 dBm nominal operation at 10dB extinction

ratio. RSSI output signal proportional to average input current

is available for monitoring and alarm generation. To facilitate

assembly in small form factor packages such as a TO-46 or TO-

56 header, the ADN2882 integrates the photodiode filter

network on chip and features 15 kHz low frequency cutoff

without any external components. The ADN2882 chip area is

less than 1 mm2, operates with a 3.3 V power supply and is

available in die form.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. ADN2882 Block Diagram

1100Ω50Ω50Ω

0.85V 5mA

200Ω

20pF

OUT

OUTB

GND GND CAP

FILTER

VCC

VCC_FILTER

3.3V

RSSI

ADN2882 Preliminary Technical Data

Rev. PrD Nov. 04 2004 | Page 2 of 10

TABLE OF CONTENTS

Electrical Specifications................................................................... 3

Absolute Maximum Ratings............................................................ 4

ESD Caution.................................................................................. 4

Pad Description ................................................................................ 5

Pad Layout..........................................................................................6

Pad Coordinates ............................................................................6

Die Information.............................................................................6

Assembly Recommendations...........................................................7

REVISION HISTORY

07/04—Revision PrB July 27 2004

09/04 - Revision PrC Sept 30 2004: spec changes

11/04 – Revision PrD: RSSI added in

Preliminary Technical Data ADN2882

Rev. PrD Nov. 04 2004 | Page 3 of 10

ELECTRICAL SPECIFICATIONS

Table 1.

Parameter Conditions1 Min Typ Max Unit

DYNAMIC PERFORMANCE

Bandwidth (BW)2 −3 dB 3.3 3.8 GHz

Total Input RMS Noise (IRMS)2 DC to 4.0 GHz 520 TBD nA

Small Signal Transimpedance (ZT) 100MHz 2800 3800 4800 V/A

Low Frequency Cutoff IIN = 10µA

IIN = 500µA

TBD

kHz

Output Return Loss DC to 4.25GHz, differential −20 −12 dB

Input Overload Current3 Pavg TBD 3.25 dBm

Maximum Output Swing pk-pk diff, IIN,PK- PK = 2.0 mA 180 250 350 mV

Output Data Transition Time 20% to 80% rise/fall time IIN,PK- PK = 2.5 mA 40 ps

PSRR <10 MHz −40 dB

Group Delay Variation 50 MHz to 1.0 GHz TBD ps

Transimpedance Ripple 50 MHz to 1.0 GHz TBD dB

Total Jitter 10 µA < IIN,PK- PK ≤ 100 µA TBD TBD ps

100 µA < IIN,PK- PK ≤ 2.0 µA TBD TBD ps

Deterministic Jitter 10 µA < IIN,PK- PK ≤ 100 µA 2 ps

Linear Output Range

100 µA < IIN,PK- PK ≤ 2.0 µA

Pk-pk, < 1dB compression

TBD

DC PERFORMANCE

Power Dissipation IIN,AVE = 0 50 75 120 mW

Input Voltage 0.85 V

Output Common Mode Voltage DC terminated to VCC Vcc − 0.12 V

Output Impedance Single-ended 50 Ω

PD FILTER Resistance RF 200 Ω

PD FILTER Capacitance CF 20 pF

RSSI Sensitivity IIN, AVE = 0 uA to 1 mA 0.8 V/mA

RSSI Offset IIN, AVE = 0 uA TBD mV

1 Min/Max VCC = +3.3 V ± 0.3 V, Ta = −40°C to +95°C; Typ VCC = 3.3 V, Ta = +25C.

2 Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).

3 10–10 BER, 10 dB ER,

ADN2882 Preliminary Technical Data

Rev. PrD Nov. 04 2004 | Page 4 of 10

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Supply Voltage (VCC to GND) 5 V

Maximum Input Current 10 mA

Storage Temperature Range −65°C to +125°C

Operating Ambient Temperature Range −40°C to +95°C

Maximum Junction Temperature 165°C

Die Attach Temperature (<60 seconds) 450°C

Stresses above those listed under Absolute Maximum Rating

may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or

any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Preliminary Technical Data ADN2882

Rev. PrD Nov. 04 2004 | Page 5 of 10

PAD DESCRIPTION

Table 3.

Pad No. Pad Name Function

1 GND Ground (input return).

2 IN Current input. Bond directly to PD anode.

3 TEST Test probe Pad. Leave floating.

4 FILTER Filter Output

5 FILTER Filter Output

6 GND Ground.

7 RSSI Voltage Output (provides average input current reading)

8 CAP Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz.

9 GND Ground.

10 GND Ground (output return).

11 OUTB Negative Output. Drives 50 Ω termination (ac or dc termination).

12 OUT Positive Output. Drives 50 Ω termination (ac or dc termination).

13 GND Ground (output return).

14 GND Ground.

15 VCCFILTER Filter Supply. Connect to VCC to enable on-chip 200 Ω, 20 pf Filter.

16 VCC 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.

17 VCC 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.

FILTER

RSSI

ADN2882 Preliminary Technical Data

Rev. PrD Nov. 04 2004 | Page 6 of 10

PAD LAYOUT

Figure 2.. Pad Layout

PAD COORDINATES

Table 4.

PAD # PAD X (um) Y (um)

1 GND −500 260

2 IN −500 130

3 TEST −500 10

4 FILTER −500 −120

5 FILTER −500 −260

6 GND −350 −260

7 RSSI −200 −260

8 CAP −50 −260

9 GND 130 −260

10 GND 500 −260

11 OUTB 350 −60

12 OUT 350 60

13 GND 500 260

14 GND 130 260

15 VCCFILTER −50 260

16 VCC −200 260

17 VCC −350 260

DIE INFORMATION

Die Size

0.7mm × 1.2mm

(edge-edge including 1mil scribe)

Die Thickness

10mils = 0.25mm

Passivation Openings

0.075 mm × 0.075 mm

(pads 1-8, 9, 10, 13, 15, 16, 17)

0.144mm × 0.075mm

(pads 9, 11, 12, 14)

Passivation Composition

5000Å Si3N4 (top)

+5000 Å SiO2 (bot)

Pad Composition

Al/1%Cu

Backside Contact

FILTER

RSSI

Preliminary Technical Data ADN2882

Rev. PrD Nov. 04 2004 | Page 7 of 10

ASSEMBLY RECOMMENDATIONS

560pF

200pF

VPD VCC

OUTB OUT

Figure 3. 5-Pin TO-46 with External Photodiode Supply VPD

1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode

1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier

1× 200 pF RF single-layer capacitor

1× 560pF RF Single-layer capacitor

Notes

Minimize all GND bond wire lengths

Minimize IN, OUT and OUTB bond wire lengths

Maintain symmetry between IN and OUT/OUTB bond wires

ADN2882 Preliminary Technical Data

Rev. PrD Nov. 04 2004 | Page 8 of 10

ASSEMBLY RECOMMENDATIONS

200pF

VCC

OUTB OUT

Ceramic

Standoff

Figure 4. Recommended Layout for 4 pin TO-46

1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode

1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier

1× 200 pF RF single-layer capacitor

1× ceramic standoff

Notes

Minimize all GND bond wire lengths

Minimize IN, OUT and OUTB bond wire lengths

Maintain symmetry between IN and OUT/OUTB bond wires

Preliminary Technical Data ADN2882

Rev. PrD Nov. 04 2004 | Page 9 of 10

TYPICAL SIGNAL PERFORMANCE

ADN2882 Preliminary Technical Data

Rev. PrD Nov. 04 2004 | Page 10 of 10

ORDERING GUIDE

Model Temperature Package Description Package Option

ADN2882XCHIPS-WP -40oC to 95oC NA Tested Die

PR04946-0-11/04(PrD)