Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ Small Package Outline RDS(ON) 130mΩ
▼ Surface Mount Device ID- 2.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice 1
AP2301GN-HF
Rating
- 20
+12
-2.6
0.01
Halogen-Free Product
Continuous Drain Current3-2.1
Pulsed Drain Current1-10
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
200902046
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
-55 to 150
Linear Derating Factor
1.38
-55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2301GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-5V, ID=-2.8A - - 130 mΩ
VGS=-2.8V, ID=-2.0A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V
gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S
IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-2A - 5 9 nC
Qgs Gate-Source Charge VDS=-16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC
td(on) Turn-on Delay Time2VDS=-10V - 6 - ns
trRise Time ID=-1A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 - ns
tfFall Time RD=10Ω-5-
ns
Ciss Input Capacitance VGS=0V - 270 - pF
Coss Output Capacitance VDS=-20V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
RgGate Resistance f=1.0MHz - 10 15 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
ISM Pulsed Source Current ( Body Diode )1- - -10 A
VSD Forward On Voltage2Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP2301GN-HF
0
2
4
6
8
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oCVGS = -5V
VGS = -4V
VGS = -3V
VGS = -2V
0
2
4
6
8
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150 oCVGS = -5V
VGS = -4V
VGS = -3V
VGS = -2V
80
120
160
200
240
0246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
)
ID= -2A
TA=25
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -2.8A
VGS = -5V
0
1
10
0.1 0.3 0.5 0.7 0.9 1.1 1.3
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.0
0.5
1.0
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
AP2301GN-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
Single Pulse
0
1
2
3
4
5
0123456
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -2A
VDS = -16V
10
100
1000
1 5 9 13 17 21 25
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Q
VG
QGS QGD
QG
Charge
-4.5V
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
1ms
10ms
100ms
1s
DC
TA=25°C
Single Pulse
td(on) trtd(off)tf
VDS
VGS
10%
90%
