FAMOSPEC PNP SILICON POWER TRANSISTORS 2SA1011 transistor is designed for use in general purpose Power amplifier, vertical output application FEATURES: * Collector-Emitter Voltage Veeo= 160V(Min) * DC Current Gain hFE= 60-200@I,= 300mA MAXIMUM RATINGS PNP 2SA1011 1.5 AMPERE POWER TRANASISTORS 160 VOLTS 25 WATTS TO-220 Characteristic Symbol 2SA1011 Unit Coliector-Emitter Voltage Veco 160 Vv Collector-Base Voltage Vepo 180 Vv Emitter-Base Voltage Vego 6.0 V Collector Current - Continuous Ic 1.5 A - Peak lom 3.0 Total Power Dissipation @T, = 25C Pp 25 WwW Derate above 25C 0.2 wc Operating and Storage Junction Ty. Tst C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R8jc 5.0 C FIGURE -1 POWER DERATING wo Oo N a N oS = o P, , POWER DISSIPATION(WATTS) a a Oo oO 25 50 75 Te , TEMPERATURE(C) 125 150 PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 297 L 0.33 0.55 M 2.48 2.98 Oo 3.70 3.902SA1011 PNP eee eee ee eee eee ene ee ene ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Voltage Vepo Vv (l,= 1.0 mA, I,= 0) 180 Collector-Emitter Voltage Veeo V (1,= 1.0 mA, I,= 0 ) 140 Emitter-Base Voltage Veso V ( Ip= 1.0 mA, I-= 0) 6.0 it Collector Cutoff Current lcso uA ( Vog= 120 V, I= 0) 10 Emitter Cutoff Current leno uA ( Veg= 4.0 V, I= 0) 10 ON CHARACTERISTICS (1) DC Current Gain ** hFE (Ig= 0.3 A, Vog= 5.0 V ) 60 200 Collector-Emitter Saturation Voltage VoeE;sat) Vv (Ig= 0.5 A, I,= 50 mA ) 0.5 Base-Emitter On Voltage VeE;on) Vv (l= 10 mA, Veg= SV ) 1.5 SWITCHING CHARATERISTICS Turn-on Time Voec= 20V,ig= 0.5 A ton 0.3 hs Storage Time Ipa= -Ipa= SO mA t, 0.5 ps PW= 201s Fall Time t 0.2 HS (1) Pulse Test: Pulse Width =300ys,Duty Cycle = 2.0% ** The 2SA1011 is Classified by 300mA hFE as Follows: | 60 D 120 100 E 200 |2SA1011 PNP SEE Ic - Vee ACTIVE-REGION SAFE OPERATING AREA (SOA) 18 < g = a E g 3 8 g 04 e - Bonding Wire Limit a Second Breakdown Lint 0 3 1 Thermally Limited . at T .=25C (Sine Puse} 40 80 12 16 20 Vee , COLLECTOR-EMITTER VOLTAGE (V) 50 70 10 20 (30 50 70 = 100 300 VCE(sat) - Ie Voce , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=150 C:T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Typ$150C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) 0.01 0.02 6.05 0.1 02 03 05 1.0 20 3.0 Ib, COOLECTOR CURRENT (A) DC CURRENT GAIN COMMON EMITTER Vog2-10V & hre , DC CURRENT GAIN 8 0.01 80.02 0.05 6.1 02 03 05 1.0 3.0 Ic , COLLECTOR CURRENT (AMP)