2N7227JANTX - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 14

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 9.0

IDM Pulsed Drain Current 56

PD @ TC = 25°C Max. Power Dissipation 150 W

Linear Derating Factor 1.2 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy 700 mJ

IAR Avalanche Current 14 A

EAR Repetitive Avalanche Energy 15 mJ

dv/dt Peak Diode Recovery dv/dt 4.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s)

Weight 9.3 (Typical) g

HEXFET® MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

°C

POWER MOSFET

THRU-HOLE (TO-254AA)

02/15/10

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Product Summary

Part Number RDS(on) I D

IRFM350 0.315Ω 14A

For footnotes refer to the last page

IRFM350

JANTX2N7227

JANTXV2N7227

REF:MIL-PRF-19500/592

400V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nElectrically Isolated

nDynamic dv/dt Rating

n Light-weight

Features:

TO-254AA

PD-90712E

IRFM350

2www.irf.com

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.315 VGS = 10V, ID = 9.0A

Resistance — — 0.415 VGS = 10V, ID = 14A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 6.0 — — S VDS > 15V, IDS = 9.0A 

IDSS Zero Gate Voltage Drain Current — — 25 VDS = 320V ,VGS = 0V

— — 250 VDS = 320V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 110 VGS =10V, ID = 14A

Qgs Gate-to-Source Charge — — 18 nC VDS = 200V

Qgd Gate-to-Drain (‘Miller’) Charge — — 65

td(on) Turn-On Delay Time — — 35 VDD = 200V, ID = 14A,

trRise Time — — 190 VGS =10V, RG = 2.35Ω

td(off) Turn-Off Delay Time — — 170

tfFall Time — — 130

LS + LDTotal Inductance — 4.0 —

Ciss Input Capacitance — 1300 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 400 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 130 —



µA

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

For footnotes refer to the last page

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.83

RthJS Case-to-sink — 0.21 —

RthJA Junction-to-Ambient — — 48 Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 14

ISM Pulse Source Current (Body Diode) —— 56

VSD Diode Forward Voltage — — 1.7 V Tj = 25°C, IS = 14A, VGS = 0V 

trr Reverse Recovery Time — — 1200 ns Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 11 µC VDD ≤ 50V 

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Ω

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

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IRFM350

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

IRFM350

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

FOR TEST CIRCUIT

SEE FIGURE 13a & b

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

10ms

100µs

OPERATION IN THIS AREA LIMITED BY R

DS(on)

1ms

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IRFM350

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRFM350

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Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

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IRFM350

 ISD ≤ 14A, di/dt ≤ 145A/µs,

VDD ≤ 400V, TJ ≤ 150°C

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

 VDD = 50V, starting TJ = 25°C, L= 7.1mH

Peak IL = 14A, VGS = 10V

Footnotes:

Case Outline and Dimensions — TO-254AA

3.81 [.150]

0.12 [.005]

1.27 [.050]

1.02 [.040]

6.60 [.260]

6.32 [.249]

C14.48 [.570]

12.95 [.510]

0.36 [.014] B A

1.14 [.045]

0.89 [.035]

3.81 [.150]

20.32 [.800]

20.07 [.790]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

17.40 [.685]

16.89 [.665]

123

13.84 [.545]

13.59 [.535]

0.84 [.033]

MAX.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

3. CONTROLLING DIMENSION: INCH.

NOT E S :

PIN ASSIGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/2010