BPX 48
BPX 48 F
Silizium-Differential-Fotodiode
Silicon Differential Photodiode
BPX 48 BPX 48 F
2001-02-21 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm (BPX 48) und bei
920 nm (BPX 48 F)
• Hohe Fotoempfindlichkeit
• DIL-Plastikbauform mit hoher Packungsdichte
• Doppeldiode mit ex trem hoher Gleichmäßigkeit
Anwendungen
• Nachlaufsteuerung
• Kantenführungen
• Weg- bzw. Winkelabtastungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
BPX 48 Q62702-P17-S1
BPX 48 F Q62702-P305
Features
• Especially suitable for applications from
400 nm to 1100 nm (BPX 48) and of 920 nm
(BPX 48 F)
• High photosensitivity
• DIL plastic package with high packing density
• Double diode with extremely high
homogeneousness
Application
• Follow-up control
• Edge control
• Path and angle scanning
• Industrial electronics
• For control and drive circuits
2001-02-21 2
BPX48, BPX48F
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 80 °C
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit t ≤ 3 s)
Soldering temperature in 2 mm distance from
case bottom (t ≤ 3 s)
TS230 °C
Sperrspannung
Reverse voltage VR10 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 50 mW
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
BPX 48 BPX 48 F
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 Ix
VR = 5 V, λ = 950 nm, Ee = 0.5 mW/cm2
IP
IP
24 (≥ 15)
–
–
7.5 (≥ 4.0)
µA
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 920 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 …1150 750 …1150 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A1.54 1.54 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
0.7 ×2.2 0.7 ×2.2 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.5 0.5 mm
BPX48, BPX48F
2001-02-21 3
Halbwinkel
Half angle ϕ±60 ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR 10 (≤ 100) 10 (≤ 100) nA
Spektrale Fotoempfindlichke it
Spectral sensitivity
λ = 850 nm
λ = 950 nm Sλ
Sλ
0.55
––
0.65 A/W
Max. Abweichung der Fotoempfindlichkeit der
Systeme vom Mittelwert
Max. deviation of the system spectral sensiti vity
from the average
∆S±5±5%
Quantenausbeute
Quantum yield
λ = 850 nm
λ = 950 nm η
η0.8
––
0.95
Electrons
Photon
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
VO
VO
330 (≥ 280)
–
–
300 (≥ 280)
mV
mV
Kurzschlußstrom
Short-circuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
ISC
ISC
24
–
–
7
µA
µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 20 µA
tr, tf500 500 ns
Durchlaßspannung, IF = 40 mA, E = 0
Forward voltage VF1.3 1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C025 25 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
BPX 48 BPX 48 F
2001-02-21 4
BPX48, BPX48F
Directional Characteristics
Srel = f (ϕ)
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 950 nm TCI
TCI
0.18
––
0.2 %/K
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP 1.0 ×10– 13 1.0 ×10– 13
Nachweisgrenze, VR = 10 V, λ = 950 nm
Detection limit D* 1.2 ×1012 1.2 ×1012
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
BPX 48 BPX 48 F
W
Hz
------------
cm Hz×
W
--------------------------
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
BPX48, BPX48F
2001-02-21 5
Relati ve Sp ectral Sensi ti vi t y
BPX 48 Srel = f (λ)
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit-Voltage VO = f (Ee)
BPX 48 F
Capacitance
C = f (VR), f = 1 MH z, E = 0
Relative Spectral Sensitivity
BPX 48 F Srel = f (λ)
Total Power Diss ipat ion
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Vol t age VO = f (Ev)
BPX 48
Dark Current
IR = f (VR), E = 0
2001-02-21 6
BPX48, BPX48F
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / D im ensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of component and sha ll not be considered as assured char ac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endange red.
4.05 (0.159)
3.75 (0.148)
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
2.54 (0.100)
7.8 (0.307)
7.4 (0.291) 6.6 (0.260)
6.3 (0.248)
0.3 (0.012)
0.25 (0.010)
0.8 (0.031)
2.2 (0.087)
1.9 (0.075)
3.5 (0.138)
3.0 (0.118)
7.62 (0.300) spacing
1.10 (0.043) 0.09 (0.004)
0.4 (0.016)
2.45 (0.096)
2.54 (0.100)
1.85 (0.073)
2.25 (0.089)
cathode
anode
Radiant sensitive area
GEOY6638
Diode system
2.0 (0.079) x 0.67 (0.026)
0.6 (0.024)
0.5 (0.020)
0.7 (0.028)
0...5˚
