2001. 6. 20 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 1
CONDENSER MICROPHONE APPLICATION.
FEATURES
ᴌExpecially Suited for Use in Audio, Telephone.
ᴌCapacitor Microphones.
ᴌExcellent Voltage Characteristics.
ᴌExcellent Transient Characteristics.
MAXIMUM RATING (Ta=25ᴱ)
123
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. SOURCE
2. GATE
3. DRAIN
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
EE
L
N
M
C
H
0.80
O 0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDO -20 V
Gate Current IG10 mA
Drain Current ID1 mA
Drain Power Dissipation PD400 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100ỌA-20 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=1ỌA- -0.6 -1.5 V
Drain Current IDSS (Note) VDS=5V, VGS=0 100 - 480 ỌA
Foward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz 0.4 1.2 - mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF
Note : IDSS Classification A:100ᴕ170 , B:150ᴕ240, C:210ᴕ350 , D:320ᴕ480
2001. 6. 20 2/3
KTK596
Revision No : 1
ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ, VCC=4.5V, RL=1kή, Cin=15pF, See Specified Test Circuit.)
SPECIFIED TEST CIRCUIT
ᴌVoltage gain.
ᴌFrequency Characteristic.
ᴌDistortion.
ᴌReduced Voltage Characteristic.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Voltage Gain GVVin=10mV, f=1kHz - -3.0 - dB
Reduced Voltage Characteristic ẤGVV Vin=10mV, f=1kHz VCC=4.5Vᵎ1.5V - -1.2 -4.0 dB
Frequency Characteristic ẤGVF f=1kHzᴕ110Hz - - -1.0 dB
Input Resistance Zin f=1kHz 25 - - Mή
Output Resistance ZOf=1kHz - - 700 ή
Total Harmonic Distortion THD Vin=30mV, f=1kHz - 1.0 %
Output Noise Voltage VNO Vin=0, A curve - - -110 dB
CC
V =4.5V
V =1.5V
CC
15pF
VTVM
OSC
For Outpu
t
1kΩ
V
THD
A
B
33uF
Impedance
1kΩ
2001. 6. 20 3/3
KTK596
Revision No : 1
1
TOTAL HARMONIC DISTORTION THD (%)
0.5
30
0
INPUT VOLTAGE V (mV)
IN
THD - VV - I
DSS
DRAIN CURRENT I (µA)
50 100 300 1k
-120
NO
OUTPUT NOISE VOLTAGE V (dB)
THD - I
DSS
DRAIN CURRENT I (µA)
50 100 300 1k
3
TOTAL HARMONIC DISTORTION THD (%)
10
NO DSS
-118
-116
-114
-112
-110
50070
V :V =4.5V
V =0,A CURVE
R =1.0kΩ
I :V =5.0V
NO CC
i
L
DSS DS
IN
40 80 120 160 200 240
0.7
3
5
10
THD : V =4.5V
f=1kHz
I : V =5.0V
CC
DSS DS
I =100µA
DSS
I =250µA
DSS
I =400µA
DSS
REDUCED VOLTAGE CHARACTERISTIC
-6
v
300 1k10050
DRAIN CURRENT I (µA)
DSS
G V - I
v DSS
G V (dB)
50070
-4
-2
0
2
DSDSS
in
CC
v
I :V =5.0V
f=1kHz
V =10mV
G V :V =4.5V 1.5V
26
INPUT RESISTANCE Z (MΩ)
i
3001007050
DRAIN CURRENT I ( A)
DSS
Z - I
DSS
50070
5
7
30
50
DS
DSS
CC
I : V =5.0V
f=1kHz
THD : V =4.5V
Z - I
DSS
DRAIN CURRENT I (µA)
50 70 100 300
200
o
OUTPUT RESISTANCE Z (Ω)
i DSS
28
30
32
34
36
500 1k
Z :V =4.5V
V =10mV
f=1kHz
I :V =5.0V
iCC
in
DSS DS
oDSS
300
400
500
600
700
500 1k
DS
DSS
in
CC
o
I :V =5.0V
f=1kHz
V =10mV
Z :V =4.5V
in
V =30mV
