IRL80HS120 Typical values (unless otherwise specified) Target Applications Wireless charging Adapter Telecom VDSS VGS RDS(on) (max.) 80V min. 20V max Qg tot Qgd 32m@ 10V Vgs(th) 4.7nC 1.8nC 1.7V Benefits Top View Higher power density designs Higher switching frequency IR MOSFET -- Uses OptiMOSTM5 Chip Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reductions D 1 6 D D 2 D S G 3 5 D 4 S PQFN 2 mm x 2 mm G Gate Package Type IRL80HS120 PQFN 2mm x 2mm Standard Pack Form Tape and Reel 110 ID = 7.5A 90 100 Orderable Part Number IRL80HS120 VGS = 4.0V VGS = 4.5V VGS = 5.0V VGS = 6.0V VGS = 7.0V VGS = 10V 80 90 80 70 60 T J = 125C 50 40 70 60 50 40 30 30 20 T J = 25C 20 10 10 2 3 4 5 6 7 8 9 10 11 0 12 Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com 10 20 30 40 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Figure 1 Quantity 4000 S Source 100 120 Typical RDS(on) (m ) RDS(on) , Drain-to -Source On Resistance (m ) Base part number D Drain Figure 2 Typical On-Resistance vs. Drain Current Please read the important Notice and Warnings at the end of this document V1.3 2017-06-20 IRL80HS120 Table of Contents Table of Contents Target Applications Benefits ...............................................................................................................1 ..........................................................................................................................1 Ordering Table ......................................................................................................................1 Table of Contents ...................................................................................................................2 1 Parameters ............................................................................................................3 2 Maximum ratings, Thermal, and Avalanche characteristics .............................................4 3 Electrical characteristics ..........................................................................................5 4 Electrical characteristic diagrams ..............................................................................6 Package Information ............................................................................................................12 Qualification Information .........................................................................................................14 Revision History ....................................................................................................................15 Final Datasheet 2 V1.3 2017-06-20 IRL80HS120 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 80 V RDS(on) max 32 m ID @ TC = 25C 12.5 A ID @ TA = 25C 6.0 A Final Datasheet 3 V1.3 2017-06-20 IRL80HS120 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ = 25C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Silicon Limited) Continuous Drain Current (Silicon Limited) (Source Bonding Technologies Limited) Continuous Drain Current (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Maximum Power Dissipation Gate-to-Source Voltage Peak Soldering Temperature Operating Junction and Storage Temperature Range Table 3 Thermal characteristics Parameter Symbol Junction-to-Case (Bottom) RJC Junction-to-Case (Top) RJC Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Table 4 Values Unit ID ID TC (Bottom) = 25C, VGS @ 10V TC (Bottom) = 100C, VGS @ 10V 12.5 9.0 ID TC (Bottom) = 25C, VGS @ 10V 10.2 A ID IDM PD PD PD VGS TP TA= 25C, VGS @ 10V TC (Bottom) = 25C TC (Bottom) = 25C TC (Bottom) = 100C TA = 25C - 6.0 41 11.5 5.8 2.5 20 270 W TJ ,TSTG - -55 to + 175 Conditions - Min. - Typ. - Max. 13 90 60 42 V C Unit C/W Avalanche characteristics Parameter Single Pulse Avalanche Energy Avalanche Current Symbol Values Unit EAS IAR 22 7.5 mJ A Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.8mH, RG = 50, IAS = 7.5A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on a 1 inch square PCB (FR-4). Please refer to AN-994 for more details. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 10.2A by source bonding technology. Final Datasheet 4 V1.3 2017-06-20 IRL80HS120 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient V(BR)DSS VGS = 0V, ID = 250A V(BR)DSS/TJ Reference to 25C, ID = 1mA VGS = 10V, ID = 7.5A Static Drain-to-Source On-Resistance RDS(on) VGS = 4.5V, ID = 3.8A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 10A Gate Threshold Voltage Temp. Coefficient VGS(th)/TJ VDS = 64V, VGS = 0V Drain-to-Source Leakage Current IDSS VGS = 20V IGSS Gate-to-Source Forward Leakage IGSS VGS = -20V Gate Resistance RG Table 6 Min. 80 1.1 1.7 2.3 V - -6.4 1.1 1.0 100 100 - mV/C A Symbol Conditions Forward Trans conductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss VDS = 10V, ID = 7.5A VDS = 40V ,VGS = 0V VDD = 40V ID = 7.5A RG = 2.7 VGS = 4.5V VGS = 0V VDS = 25V = 1.0MHz Min. 14 - Output Capacitance Output Capacitance Coss Coss VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz - ID = 7.5A VDS = 40V VGS = 4.5V See Fig.8 Values Typ. Max. 4.7 7.0 1.3 0.6 1.8 1.0 2.4 9.2 7.6 22 9.2 10 540 150 12 410 70 Unit S nC nC ns pF - Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Final Datasheet nA Dynamic characteristics Parameter Table 7 Values Unit Typ. Max. V 38 mV/C 25 32 m 32 42 Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 7.5A,VGS = 0V TJ = 25C, IF = 7.5A, VDD = 40V di/dt = 100A/s D Min. Values Typ. Max. - - 12.5 - - 41 - 26 21 1.2 - G ISM VSD trr Qrr S 5 Unit A V ns nC V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams 4 Electrical characteristic diagrams 100 100 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) Tj = 25C 10 2.7V TOP 1 BOTTOM VGS 12V 10V 4.5V 4.0V 3.5V 3.3V 3.0V 2.7V 10 2.7V TOP 1 BOTTOM 0.1 0.1 0.1 1 10 0.1 100 Figure 4 Typical Output Characteristics 10 100 Typical Output Characteristics 2.4 RDS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current (A) 100 TJ = 175C 10 T J = 25C VDS = 25V 60s PULSE WIDTH 1 ID = 7.5A 2.0 VGS = 10V 1.6 1.2 0.8 0.4 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) Figure 5 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Figure 3 VGS 12V 10V 4.5V 4.0V 3.5V 3.3V 3.0V 2.7V Typical Transfer Characteristics Final Datasheet TJ , Junction Temperature (C) Figure 6 6 Normalized On-Resistance vs. Temperature V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams 10000 100 VGS , Gate-to-Source Voltage (V) Ciss ID = 7.5A 12 Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) 14 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, Cds SHORTED Coss Crss 10 VDS = 64V VDS = 40V VDS = 16V 10 8 6 4 2 0 1 0.1 1 10 0 100 Typical Capacitance vs. Drain-to-Source Voltage Figure 8 TJ = 175C TJ = 25C 1 0.1 0.6 0.8 1.0 1.2 Typical Source-Drain Diode Forward Voltage Final Datasheet 10 12 100sec 10 1msec LIMITED BY PACKAGE 1 10msec 0.1 Tc = 25C Tj = 175C Single Pulse DC 0.01 1.4 0.1 VSD , Source-to-Drain Voltage (V) Figure 9 8 OPERATION IN THIS AREA LIMITED BY RDS (on) VGS = 0V 0.4 6 Typical Gate Charge vs. Gate-to-Source Voltage 100 ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 10 4 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Figure 7 2 1 10 100 VDS , Drain-toSource Voltage (V) Figure 10 7 Maximum Safe Operating Area V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams 14 3.0 LIMITED BY PACKAGE VGS(th) , Gate threshold Voltage (V) ID , Drain Current (A) 12 10 8 6 4 2 2.5 2.0 1.5 ID = 10A ID = 250A 1.0 ID = 1.0mA ID = 1.0A 0.5 0 25 50 75 100 125 150 -75 -50 -25 175 0 50 75 100 125 150 175 TJ , Temperature ( C ) TC , Case Temperature (C) Figure 11 25 Maximum Drain Current vs. Case Temperature Figure 12 Typical Threshold Voltage vs. Junction Temperature E AS , Single Pulse Avalanche Energy (mJ) 100 ID TOP 80 BOTTOM 1.4A 2.2A 7.5A 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Figure 13 Final Datasheet Maximum Avalanche Energy vs. Drain Current 8 V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Single Pulse Avalanche Current (A) 10 0.01 1 0.05 0.10 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj =25C and Tstart = 150C. 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 14 Typical Avalanche Current vs. Pulse Width Thermal Response ( Z thJC ) 100 10 D = 0.50 0.20 0.10 1 0.02 0.05 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9 V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams Figure 16 Figure 17a Final Datasheet Peak Diode Recovery dv/dt Test Circuit for N-Channel Power MOSFETs Gate Charge Test Circuit Figure 17b 10 Gate Charge Waveform V1.3 2017-06-20 IRL80HS120 Electrical characteristic diagrams Figure 18a Unclamped Inductive Test Circuit Figure 18b Unclamped Inductive Waveforms Figure 19a Switching Time Test Circuit Figure 19b Switching Time Waveforms Final Datasheet 11 V1.3 2017-06-20 IRL80HS120 Package Information 5 Package Information PQFN 2 x 2 Outline Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.infineon.com/technical-info/appnotes/an-1154.pdf PQFN 2 x 2 Part Marking 80HS120 Note: For the most current drawing please refer to website at : www.irf.com/package/ Final Datasheet 12 V1.3 2017-06-20 IRL80HS120 Package Information PQFN 2 x 2 Tape and Reel Note: For the most current drawing please refer to website at : www.irf.com/package/ Final Datasheet 13 V1.3 2017-06-20 IRL80HS120 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) Qualification Level Moisture Sensitivity Level RoHS Compliant MSL1 (per JEDEC J-STD-020D) PQFN 2 mm x 2 mm Yes Applicable version of JEDEC standard at the time of product release. Final Datasheet 14 V1.3 2017-06-20 IRL80HS120 Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 1.0 2016-09-21 First release data sheet as Provisional. All pages 1.1 2016-10-17 Added Switch Time test data. Datasheet released as Provisional. All pages 1.2 2017-03-29 Parts tested as Unique datasheet with revised current and all other tests Updated datasheet in new Infineon Template Datasheet completed and removed "Approved (Not Released)" from page 1. All pages 1.3 2017-06-20 Table 5-- Idss--Corrected typo error for Vds from 48V to 64V--page 5 Final Datasheet 15 V1.3 2017-06-20 Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AU-ConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DI-POLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OPTIGATM, OptiMOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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