TIP 31 Series 40-100 VOLTS 3 AMP, 40 WATTS NPN POWER TRANSISTORS COMPLEMENTARY TO THE TIP32 SERIES The TIP31 Series power transistors are designed for use in general purpose amplifier and switching applications. NPN COLLECTOR Features: oO ance e 40W at 25C case temperature EMITTER e 3A continuous collector current CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 5A peak collector current aoatt028) 19225) sos 99 -. , - EB) of 1012.79) -190(4.83) 055(1,39) e Minimum fT of 3 MHz at 10V, 0.5A 30019.85) 1708.52" he aT 2 e Customer-specified selections available OAs sae2| [case TEMPERATURE | t ee OINT + .355(9.02} TaiteeO | | 2806.25) 2015.50 : .130(3.3) je~ 20810. 15) Hi || TERM.1 4 .500(12,7)MIN. TERM.2 r see TERM.3 033(0.84) \ | 107(2.72) "027(0.69) : een i aa "087(2.21) (wee [verw.1 | veam2 | term.3 | Tap | [ro-220-aB | ease | coucecton | emiTeR | COLLECTOR | maximum ratings (Tc = 25C) (unless otherwise noted) RATING SYMBOL TIP31 TIP31A TIP31B TIP31C UNITS Collector-Emitter Voltage VCEO 40 60 80 100 Voits Collector-Base Voltage VcBo 80 100 120 140 Volts Emitter Base Voltage VeBO 5 5 5 Volts Collector Current Continuous Io 3 3 3 3 A Peak lom 5 5 5 Base Current Continuous lp 1 1 1 1 A Total Power Dissipation @ Ta = 25C Po 2 2 2 2 Watts @ To = 26C 40 40 40 40 Operating and Storage Junction Temperature Range Ty, Tstg | -65 to +150 | -65to +150 | -65to +150 | -65 to +150 C thermal characteristics Thermal Resistance, Junction to Case Rgsc 3.125 3.125 3.125 3.125 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 250 250 250 250 C 779 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL| MIN | TYP | MAX | UNIT | off characteristics Collector-Emitter Breakdown Voltage TIP31 VcEO 40 (Io = 30mA) TIP31A 60 TIP31B 80 TIP31C 100 Collector Cutoff Current ICEO (Vce = -30V) TIP31, TIP31A - (VcE = 60V) TIP31B, TIP31C Culle-ctor Cutoff Current IcES iV ce = 80V) TIP31 (Vcg = 100V) TIPSTA (Voce = 120V) TIP31B (VCE = 140V) TIP31C Emitter Cutoff Current i (VeB = SV, Ic = 0) EBO Volts Ltt | PEt | mA | | O @o mA Pld Pld 2999 NON DD PO _ mA second breakdown | Second Breakdown with Base Forward Biased | FBSOA | SEE FIGURE 3 | on characteristics DC Current Gain hee (Io = 1A, Voge = 4V) 25 - (Ic = 3A, Voe = 4V) 10 _ 50 Collector-Emitter Saturation Voltage VCE(sat) (Ic = 3A, lg = 375mA) _ _ 1.2 Vv Base-Emitter Voltage VBE (Ic = 3A, Vog = 4V) fon) _ 18 V switching characteristics Turn-on Time Ry = 300, Ic = 1A ton _ 0.5 = us - Ip1 = Iga =0.1A Turn-off Time VeE(ott) = -4.3V toff 2 OuTPUT MONITOR > INPUT ov om ee gp ate tee ee ee ee - = ~~ orm 2 AL = 302 10% T 4 ! MONITOR 4.3V 562 +NOT4 = 1N9T4 | -1N914 { ' o Lu Vgen 2 ~m ton rt be tott . \ = Voc = 30 V ' 10% Vay ~ 10V pe OUTPUT | ADJUST FOR MONITOR Von * 8.8 V AT 90% INPUT MONITOR VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. Vgenis a 30-V pulse into a 50 2 termination. B. The Vgen waveform is supplied by the following characteristics: t, < 15 ns, ty < 15s, Zout = 502, tw = 204s, duty cycle < 2%. . Waveforms are monitored on an oscilloscope with the following characteristics: t, < 15s, Rin = 10 MQ, Cin < 11.5 pF. . Resistors must be noninductive types. . The d-c power supplies ray require additional bypassing in order to minimize ringing. moo FIGURE 1. RESISTIVE-LOAD SWITCHING 780 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT = . VcgE=4V To = 28C See Notes 5 and 6 > 3 8 = eo > hggEStatic Forward Current Transfer Ratio > 3 1 0.001 0.01 0.1 1 10 Ic--Collector CurrentA FIGURE 2. TYPICAL CHARACTERISTICS NOTES: 5. These parameters must be measured using pulse techniques, tw = 300 us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. 100 tw us,d=0.1=1 40 = ms, d= 0.1 = 10% tw = 10 ms, d = 0.1 = 10% : 10 Operation, See Note 7 0.4 ICollector CurrentA 0.1 0.04 0.01 1 4 10 40 100 400 1k VeeECollector-Emitter VoitageV FIGURE3 MAXIMUM SAFE OPERATING AREA NOTE ?: This combination of rnaximum voltage and current may be achieved only when switching from saturation to cutoff with aclamped inductive load. DISSIPATION DERATING CURVE 3 8 & s = o PrMaximum Continuous Device DissipationW o 0 a 50 75 100 #125 150 TcoCase Temperature"C FIGURE4 THERMAL INFORMATION 781