TLP833(F)
2008-08-04
1
TOSHIBA Photointerrupter Infrared LED + Phototransistor
TLP833(F)
Copiers, Printers, Fax Machines
VCRs, Microwave Ovens
Air Conditioners
Automatic Vending Machines
Various Position Sensors
The TLP833(F) is a photointerrupter consists of a
high-intensity GaAs LED optically coupled to a
fast-response Si phototransistor. The package
features a deep gap.
Package with deep gap (gap: 12 mm)
Designed for direct mounting on printed circuit
boards (positioning pins included).
Gap: 5 mm
Resolution: 0.5-mm slit width
High current transfer ratio: IC/IF = 5% (min)
High temperature operation: Topr = 95°C (max)
Package material: Polybutylene terephthalate
(UL94V0)
Detector impermeable to visible light
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
25°C < Ta 85°C 0.33
Forward current
derating Ta > 85°C
IF/°C
2
mA/°C
LED
Reverse voltage VR 5 V
Collectoremitter voltage VCEO 35 V
Emittercollector voltage VECO 5 V
Collector power dissipation PC 75 mW
Detector
Collector power dissipation derating
(Ta > 25°C) PC/°C 1 mW/°C
Collector current IC 50 mA
Operating temperature range Topr 30 to 95 °C
Storage temperature range Tstg 40 to 100 °C
Soldering temperature (5 s) Tsol 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TOSHIBA 1115J1
Weight: 1g (typ.)
TLP833(F)
2008-08-04
2
Markings
Operating Ranges
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC 5 24 V
Forward current IF 25 mA
Operating temperature Topr 10 75 °C
Optical Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 10mA 1.00 1.15 1.30 V
Reverse current IR V
R = 5V 10 A
LED
Peak emission wavelength P I
F = 10mA 940 nm
Dark current ID (ICEO) VCE = 24V, IF = 0 0.1 A
Detector
Peak sensitivity wavelength P 870 nm
Current transfer ratio IC/IF V
CE = 2V, IF = 10mA 5 100 %
Collectoremitter saturation
voltage VCE (sat) I
F = 20mA, IC = 0.5mA 0.1 0.35 V
Rise time tr 15
Coupled
Fall time tf
VCC = 5V, IC = 1mA
RL = 1k (Note) 15
s
Note: Switching time measurement circuit and waveform
Monthly lot number
Year of manufacture
(last digit of year of manufacture)
Month of manufacture
(January to December denoted by letters A to L respectively)
VOUT
VCC
IF
RL
90%
10%
VOUT
tf
ts
IF
td
tr
TLP833(F)
2008-08-04
3
Precautions
1. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent.
2. The package is made of polybutyleneterephthalate. Oil or chemicals may cause the package to melt or crack.
Care must be taken in relation to the environment in which the device is to be installed.
3. Mount the device on a level surface.
4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device
may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it.
5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1.
(0)P
(t)P
(0)/II
(t)/II
O
O
FC FC =
TLP833(F)
2008-08-04
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Package Dimensions
11-15J1
Unit: mm
Weight: 1 g (typ.)
Pin Connection
1. Anode
2. Cathode
3. Collector
4. Emitter
1
2
4
3
(C0.2)
2.0±0.1
2.3±0.1
(0.1)
1.2±0.1
4
(
R0.1
)
1.34±0.04
1.34±0.04
A
B
TLP833(F)
2008-08-04
5
100
1
50
30
10
5
3
3 5 10 30 100 50
Ta=2 5°C
VCE = 2 V
VCE = 0.4 V
sample 2
sample 1
0 20 40 60
80 100
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
I
F (mA)
80
0
60
40
20
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
80
0
0
60
40
20
20 40 60 80 100
IC – IF
Forward current IF (mA)
Collector current IC (mA)
50
1
0.8
30
10
5
3
0.9 1.0 1.1 1.2 1.3 1.4
Ta=75°C
25
0
25
50
I
F – VF (typ.)
Forward voltage VF (V)
Forward current IF (mA)
I
C / IF – IF
Forward current IF (mA)
Current transfer ratio
I
C / IF (%)
I
C – VCE (typ.)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
6
0
0
5
3
2
1
2 4
6 8 10 12
4
20
15
10
IF=5mA
Ta = 2 5 °C
10
0.1
1
5
3
1
0.5
0.3
3 5 10 30 50 100
Ta=2 5°C
VCE = 2 V
VCE = 0.4 V
sample 2
sample 1
TLP833(F)
2008-08-04
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Relative IC Ta (typ.)
Ambient temperature Ta (°C)
Relative collector current
1.2
0.2
1.0
0.8
0.6
0.4
40 20 0 20 40 60 80
100
VCE = 2 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
V
CE(sat) – Ta (typ.)
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.20
0
40
0.16
0.12
0.08
0.04
20 0 20 40 60 80 100
IC = 0.5 mA
IF = 20 mA
Switching Characteristics
(non saturated operation) (typ.)
Load resistance RL (k)
Switching time (s)
Switching Characteristics
(saturated operation) (typ.)
Load resistance RL (k)
Switching time (s)
I
D(ICEO) Ta (typ.)
Ambient temperature Ta (°C)
Dark current ID(ICEO) (A)
5
0
1
101
102
103
104
20 40 60 80 100 120
VCE = 24 V
10
5
VOUT
VCC
IF
RL
90%
10%
VOUT
tf
ts
IF
td
tr
Switching Time Test Circuit
500
0.3
0.1
300
100
50
30
10
5
3
1
0.5
0.3 0.5 1 3 5 10 30 50
ts
td
tr, tf
Ta = 25 °C
VCC = 5 V
VOUT = 1 V
3000
3
1
1000
500
300
100
50
30
10
5
3 5 10 30 50 100 300 500
td
tr
ts
tf
Ta = 25 °C
IF = 20 mA
VCC = 5 V
VOUT 4.65V
TLP833(F)
2008-08-04
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Relative Positioning Of Shutter And Device
For normal operation position the shutter and the device as shown in the figure below. By considering the device's
detection direction characteristic and switching time, determine the shutter slit width and pitch.
Detection Position
Characteristics(1) (typ.)
Distance d (mm)
Relative collector current
1.2
0
3
1.0
0.8
0.6
0.4
0.2
2 1 0 1 2 3 4
Detection
Position
d=0±0.3mm
0
+
d
IF = 10mA
VCE = 2V
Ta = 25°C
Shutter
Detection Position
Characteristics (2) (typ.)
Distance d (mm)
Relative collector current
1.2
0
1.0
0.8
0.6
0.4
0.2
10 11 12 13 14 15 16
d
IF=10mA
VCE=2V
Ta=25°C
Shutter
+1.5
Detection
Position
d=121.1mm
Shutter A
A
Center of sensor
12
10.9max
13.5min
Cross section between A and A
Unit in mm
TLP833(F)
2008-08-04
8
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINF RINGEMEN T.
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.