ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
D
M
=
2800
V
I
T(AV)M
=
2630
A
I
T(RMS)
=
4130
A
I
TSM
=
43×10
3
A
V
T0
=
0.85
V
r
T
=
0.16
m
Ω
Bi-Directional Control Thyristor
5STB 24Q2800
Doc. No. 5SYA1053-02 May 07
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for energy management and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values 1)
Parameter Symbol
Conditions 5STB 24Q2800 Unit
Max repetitive peak forward
blocking voltage VRM f = 50 Hz, tp = 10 ms,
Tvj = 5…125°C, Note 1
2800 V
Critical rate of rise of off-
state voltage dv/dtcrit Exp. to 1880 V, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Max reverse leakage
current IRM VRM, Tvj = 125 °C 400 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
Mechanical data
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Mounting force FM 81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Weight m 2.1 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 25.8 26.4 mm
Surface creepage distance D
S 36 mm
Air strike distance Da 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1053-02 May 07 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 2630 A
RMS on-state current IT(RMS) 4130 A
RMS on-state current IT(RMS) Full sine wave, Tc = 70°C 5840 A
Peak non-repetitive surge
current ITSM 43.0×103
A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C, sine wave
after surge: VD = VR= 0 V 9.25×106
A2s
Peak non-repetitive surge
current ITSM 46.0×103
A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C, sine wave
after surge: VD = VR= 0 V 8.78×106
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 3000 A, Tvj = 125 °C 1.35 V
Threshold voltage VT0 0.85 V
Slope resistance rT IT = 1500 A - 4500 A, Tvj= 125 °C 0.16 mΩ
Holding current IH Tvj = 25 °C 250 mA
Tvj = 125 °C 150 mA
Latching current IL Tvj = 25 °C 500 mA
Tvj = 125 °C 300 mA
Switching
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz
250 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 125 °C,
ITRM = 3000 A,
VD ≤ 1880 V,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz 500 A/µs
Circuit commutated turn-off
time tq Tvj = 125 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20 V/µs,
400 µs
Critical rate of rise of
commutating voltage dv/dtcom Tvj = 125 °C, VR ≤ 0.67⋅VRM 500 V/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery charge Qrr 1000 2100 µAs
Reverse recovery current IRM Tvj = 125 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs 30 80 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.5 µs 3 µs
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1053-02 May 07 page 3 of 7
Triggering
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Peak forward gate voltage V
FGM 12 V
Max. rated peak forward
gate current IFGM 10 A
Peak reverse gate voltage V
RGM 10 V
Max. rated gate power loss P
G
For DC gate current 3 W
Max. rated peak forward
gate power PGM(AV) see Fig. 9 W
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Gate trigger voltage VGT Tvj = 25 °C 2.6 V
Gate trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvj = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VRM 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj 125 °C
Storage temperature range T
stg -40 140 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Rth(j-c) Double-side cooled
Fm = 81...108 kN 10 K/kW Thermal resistance junction
to case
(Valid for one thyristor half
no heat flow to the second
half.)
Rth(j-c) Single-side cooled
Fm = 81...108 kN 20 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 81...108 kN 2 K/kW
Rth(c-h) Single-side cooled
Fm = 81...108 kN 4 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i c)-th(j ∑
=
i
τ
i 1 2 3 4
Ri(K/kW) 6.500 1.470 1.310 0.710
τi(s) 0.5205 0.1075 0.0194 0.0073
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1053-02 May 07 page 4 of 7
Fig. 2 On-state voltage characteristics Fig. 3 On-state characteristics.
Tj = 125°C, 10ms half sine.
05001000150020002500300035004
0
0
0
I
T
A
V
(
A
)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(
°
C
)
D
C
1
8
0
°
r
e
c
t
a
n
g
u
l
a
r
1
8
0
°
s
i
n
e
1
2
0
°
r
e
c
t
a
n
g
u
l
a
r
5STB
24Q2800
Double-s
i
d
e
d
c
o
o
l
i
n
g
Fig. 4 On-state power dissipation vs. mean on-state
current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean
on-state current. Switching losses ignored.
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1053-02 May 07 page 5 of 7
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of
on-state current Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1053-02 May 07 page 6 of 7
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRM
V(t)
-IRM
dv/dtcom
Total power loss for repetitive waveforms:
fWfWPP offonTTOT ⋅+⋅+=
where
dtIVI
T
PT
TTTT ∫⋅= 0)(
1
Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss
5STB 24Q2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1053-02 May 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
H
Fig. 18 Device Outline Drawing
Related documents:
5SYA 2020 Design of RC-Snubber for Phase Control Applications
5SYA 2049 Voltage definitions for phase control thyristors and diodes
5SYA 2051 Voltage ratings of high power semiconductors
5SYA 2034 Gate-Drive Recommendations for PCT's
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
