PHOTOCOUPLER PS2561D-1,PS2561DL-1 PS2561DL1-1,PS2561DL2-1 DIP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110C -NEPOC Series- DESCRIPTION The PS2561D-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561D-1 is in a plastic DIP (Dual In-line Package) and the PS2561DL-1 is lead bending type (Gull-wing) for surface mount. The PS2561DL1-1 is lead bending type for long creepage distance. The PS2561DL2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES * Operating ambient temperature: 110C * High Isolation voltage (BV = 5 000 Vr.m.s.) PIN CONNECTION * High collector to emitter voltage (VCEO = 80 V) (Top View) * High current transfer ratio (CTR = 160% TYP.) * High-speed switching (tr = 3 s TYP., tf = 5 s TYP.) 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector * Ordering number of taping product: PS2561DL-1-F3 : 2 000 pcs/reel : PS2561DL2-1-E3: 1 000 pcs/reel 1 * Pb-Free product 2 * Safety standards * UL approved: No. E72422 * CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) * BSI approved: No. 7112/7420 * SEMKO approved: No. 903238 * NEMKO approved: No. P09210868 * DEMKO approved: No. 314999 * FIMKO approved: No. FI 25119 * DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option) APPLICATIONS * Power supply * Telephone/FAX. * FA/OA equipment * Programmable logic controller Document No. PN10777EJ02V0DS (2nd edition) Date Published January 2010 NS The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 PACKAGE DIMENSIONS (UNIT : mm) DIP Type Long Creepage Distance PS2561DL1-1 PS2561D-1 4.60.35 4.60.35 4 3 1 2 6.50.5 6.50.5 4 3 1 2 0 to 15 +0.1 0.25 -0.05 1.250.15 10.16 3.5 0.3 3.15 3.85 0.35 0.4 3.50.3 3.20.4 4.150.4 7.62 0.500.1 0.25 M 1.250.15 0.500.10 0.25 M +0.1 0.25-0.05 2.54 0 to 15 2.54 Lead Bending Type Long Creepage Distance (Gull-Wing) PS2561DL2-1 PS2561DL-1 4.60.35 4.60.35 3 1 2 4 3 1 2 0.25 M 2.54 0.15 1.250.15 0.25 M 0.90.25 9.600.4 1.250.15 PS2561D-1, PS2561DL-1 PS2561DL1-1, PS2561DL2-1 Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 7 mm 8 mm Inner Creepage Distance (MIN.) 4 mm 4 mm 0.4 mm 0.4 mm 2 +0.1 +0.2 PHOTOCOUPLER CONSTRUCTION Isolation Distance (MIN.) 0.90.25 10.16 2.54 0.15 Parameter 0.25-0.05 0.250.2 3.50.3 0.1 +0.1 -0.05 0.25 +0.1 -0.05 6.50.5 6.50.5 4 3.50.3 Data Sheet PN10777EJ02V0DS 11.8-0.5 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 MARKING EXAMPLE No. 1 pin Mark 2561D NR031 N R Assembly Lot 0 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Pb-Free and Halogen Free New PKG Made in Japan Made in Taiwan R Y Data Sheet PN10777EJ02V0DS 3 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Specification Magazine case 100 pcs Application Approval Part Number Standard products PS2561D-1 *1 PS2561D-1 PS2561D-1Y-A Special version PS2561DL-1 PS2561DL-1Y-A (Pb-Free and (UL, CSA, BSI, PS2561DL-1 PS2561DL1-1 PS2561DL1-1Y-A Halogen Free) NEMKO, DEMKO, PS2561DL1-1 PS2561DL2-1 PS2561DL2-1Y-A SEMKO, FIMKO PS2561DL2-1 PS2561DL-1-F3 PS2561DL-1Y-F3-A Embossed Tape 2 000 pcs/reel approved) PS2561DL-1 PS2561DL2-1-E3 PS2561DL2-1Y-E3-A Embossed Tape 1 000 pcs/reel PS2561DL2-1 PS2561D-1-V PS2561D-1Y-V-A Magazine case 100 pcs PS2561DL-1-V DIN EN60747-5-2 PS2561D-1 PS2561DL-1Y-V-A (VDE0884 Part2) PS2561DL-1 PS2561DL1-1-V PS2561DL1-1Y-V-A approved (Option) PS2561DL1-1 PS2561DL2-1-V PS2561DL2-1Y-V-A PS2561DL-1-V-F3 PS2561DL-1Y-V-F3-A Embossed Tape 2 000 pcs/reel PS2561DL-1 PS2561DL2-1-V-E3 PS2561DL2-1Y-V-E3-A Embossed Tape 1 000 pcs/reel PS2561DL2-1 PS2561DL2-1 *1 For the application of the Safety Standard, following part number should be used. 4 Data Sheet PN10777EJ02V0DS PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings Unit Reverse Voltage VR 6 V Forward Current (DC) IF 40 mA PD/C 1.5 mW/C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA PC/C 1.5 mW/C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA -55 to +110 C Storage Temperature Tstg -55 to +150 C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 s, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. Data Sheet PN10777EJ02V0DS 5 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Diode Transistor Symbol Conditions MIN. TYP. MAX. Unit 1.2 1.4 V 5 A Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz ICEO VCE = 48 V, IF = 0 mA CTR IF = 5 mA, VCE = 5 V 50 160 IF = 1 mA, VCE = 5 V 10 80 Collector to Emitter Dark 10 pF 100 nA 400 % 0.3 V Current Coupled Current Transfer Ratio *1 (IC/IF) Collector Saturation VCE (sat) IF = 10 mA, IC = 2 mA Voltage Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 tr Rise Time Fall Time *2 10 VCC = 10 V, IC = 2 mA, RL = 100 tf 11 0.5 pF 3 s 5 *1 CTR rank CTR Rank CTR (%) Conditions 80 to 160 IF = 5 mA, VCE = 5 V 16 and larger IF = 1 mA, VCE = 5 V 100 to 200 IF = 5 mA, VCE = 5 V 20 and larger IF = 1 mA, VCE = 5 V 130 to 260 IF = 5 mA, VCE = 5 V 26 and larger IF = 1 mA, VCE = 5 V 200 to 400 IF = 5 mA, VCE = 5 V 40 and larger IF = 1 mA, VCE = 5 V 50 to 400 IF = 5 mA, VCE = 5 V 10 and larger IF = 1 mA, VCE = 5 V H Q W L N *2 Test circuit for switching time Pulse Input VCC PW = 100 s Duty cycle = 1/10 Input ton IF td In monitor VOUT 50 toff ts RL = 100 90% Output 10% tr 6 Data Sheet PN10777EJ02V0DS tf PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 100 1.5 mW/C 50 0 25 50 100110 125 75 100 1.5 mW/C 50 25 50 100110 125 75 150 Ambient Temperature TA (C) Ambient Temperature TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 50 IF = 10 mA TA = +100C +60C +25C Collector Current IC (mA) Forward Current IF (mA) 150 0 150 100 10 5 0C -25C -55C 1 0.5 20 15 IF = 5 mA 10 5 IF = 2 mA IF = 1 mA 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 IF = 10 mA 10 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) VCE = 48 V 24 V 10 V 5V 1 000 100 10 IF = 5 mA IF = 2 mA 1 IF = 1 mA 1 - 50 -25 0 25 50 75 100 110 0.1 0 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (C) Remark 0.2 The graphs indicate nominal characteristics. Data Sheet PN10777EJ02V0DS 7 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 400 1.4 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 Normalized to 1.0 at TA = 25C, IF = 5 mA, VCE = 5 V CTR:130% CTR:270% 0.4 0.2 0 -50 -25 0 25 50 75 VCE = 5 V, 350 n = 5 300 250 150 100 50 0 0.01 100 Ambient Temperature TA (C) 0.1 1 10 100 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 1 000 100 IC = 2 mA, VCC = 10 V, CTR = 216% IF = 5 mA, VCC = 5 V, CTR = 216% tf tr Switching Time t ( s) Switching Time t ( s) Sample A B C D E 200 10 td ts 1 tf 100 ts 10 tr 0.1 10 100 1 000 10 000 1 1 Load Resistance RL () Load Resistance RL (k) FREQUENCY RESPONSE 5 Normalized Gain GV 0 -5 100 -10 300 -15 -20 RL = 1 k IF = 5 mA, VCE = 5 V -25 0.1 1 10 100 1 000 Frequency f (kHz) Remark 8 td 10 The graphs indicate nominal characteristics. Data Sheet PN10777EJ02V0DS 100 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 TAPING SPECIFICATIONS (UNIT : mm) 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2561DL-1-F3 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 2 000 pcs/reel Data Sheet PN10777EJ02V0DS 15.9 to 19.4 Outer edge of flange 9 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 2.050.1 4.40.2 12.350.15 11.50.1 1.550.1 24.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 6.60.2 0.38 12.00.1 Tape Direction PS2561DL2-1-E3 Outline and Dimensions (Reel) R 1.0 21.00.8 1001.0 2.00.5 13.00.2 3302.0 2.00.5 25.51.0 29.51.0 Packing: 1 000 pcs/reel 10 Data Sheet PN10777EJ02V0DS 23.9 to 27.4 Outer edge of flange PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) B C D A Part Number Lead Bending A B C D PS2561DL lead bending type (Gull-wing) for long creepage distance (surface mount) 8.2 2.54 1.7 2.2 PS2561DL2 lead bending type (Gull-wing) for surface mount 10.2 2.54 1.7 2.2 Data Sheet PN10777EJ02V0DS 11 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron * Peak temperature (lead part temperature) 350C or below * Time (each pins) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100C. 12 Data Sheet PN10777EJ02V0DS PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between corrector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10777EJ02V0DS 13 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (1/2) (PS2561D-1, PS2561DL-1) Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Spec. Unit 55/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 890 Vpeak Upr 1 335 Vpeak Upr 1 669 Vpeak UTR 8 000 Vpeak Upr = 1.5 x UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg -55 to +150 C Operating temperature range TA -55 to +110 C Isolation resistance, minimum value VIO = 500 V dc at TA = 25C Ris MIN. 10 12 VIO = 500 V dc at TA MAX. at least 100C Ris MIN. 10 11 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 175 C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = Tsi 14 Data Sheet PN10777EJ02V0DS 9 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (2/2) (PS2561DL1-1, PS2561DL2-1) Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Spec. Unit 55/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 1 130 Vpeak Upr 1 695 Vpeak Upr 2 119 Vpeak UTR 8 000 Vpeak Upr = 1.5 x UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg -55 to +150 C Operating temperature range TA -55 to +110 C Isolation resistance, minimum value 12 11 VIO = 500 V dc at TA = 25C Ris MIN. 10 VIO = 500 V dc at TA MAX. at least 100C Ris MIN. 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 175 C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = Tsi Data Sheet PN10777EJ02V0DS 9 15 PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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