1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
PIN CONNECTION
(Top View)
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The PS2561D-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The PS2561D-1 is in a plastic DIP (Dual In-line Package) and the PS2561DL-1 is lead bending type (Gull-wing) for
surface mount.
The PS2561DL1-1 is lead bending type for long creepage distance.
The PS2561DL2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
• Operating ambient temperature: 110°C
• High Isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High current transfer ratio (CTR = 160% TYP.)
• High-speed switching (tr = 3
μ
s TYP., tf = 5
μ
s TYP.)
• Ordering number of taping product: PS2561DL-1-F3 : 2 000 pcs/reel
: PS2561DL2-1-E3: 1 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• BSI approved: No. 7112/7420
• SEMKO approved: No. 903238
• NEMKO approved: No. P09210868
• DEMKO approved: No. 314999
• FIMKO approved: No. FI 25119
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
PHOTOCOUPLER
PS2561D-1,PS2561DL-1
PS2561DL1-1,PS2561DL2-1
DIP PHOTOCOUPLER
OPERATING AMBIENT TEMPERATURE 110°C
−NEPOC Series−
Document No. PN10777EJ02V0DS (2nd edition)
Date Published January 2010 NS
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type Long Creepage Distance
PS2561D-1
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15°
7.62
0.25
+0.1
–0.05
12
43
PS2561DL1-1
0 to 15
0.25
+0.1
–0.05 °
10.16
2.54
0.25 M
0.50±0.1
1.25±0.15
3.85
±0.4
3.15
±0.35
3.5
±0.3 6.5±0.5
4.6±0.35
12
43
Lead Bending Type Long Creepage Distance (Gull-Wing)
PS2561DL-1
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15 0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
PS2561DL2-1
0.25 M
2.54
1.25±0.15
3.5±0.3 6.5±0.5
4.6±0.35
11.8
+0.2
–0.5
0.25
+0.1
–0.05
0.25±0.2
0.9±0.25
10.16
12
43
0.15
0.15
PHOTOCOUPLER CONSTRUCTION
Parameter PS2561D-1, PS2561DL-1 PS2561DL1-1, PS2561DL2-1
Air Distance (MIN.) 7 mm 8 mm
Outer Creepage Distance (MIN.) 7 mm 8 mm
Inner Creepage Distance (MIN.) 4 mm 4 mm
Isolation Distance (MIN.) 0.4 mm 0.4 mm
Data Sheet PN10777EJ02V0DS
2
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
MARKING EXAMPLE
2561D
NR031
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
N031
R
Package
New PKG
Made in TaiwanMade in Japan
YR
Pb-Free and
Halogen Free
Data Sheet PN10777EJ02V0DS 3
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application
Part Number *1
PS2561D-1 PS2561D-1Y-A Special version Magazine case 100 pcs Standard products PS2561D-1
PS2561DL-1 PS2561DL-1Y-A (Pb-Free and (UL, CSA, BSI, PS2561DL-1
PS2561DL1-1 PS2561DL1-1Y-A Halogen Free) NEMKO, DEMKO, PS2561DL1-1
PS2561DL2-1 PS2561DL2-1Y-A SEMKO, FIMKO PS2561DL2-1
PS2561DL-1-F3 PS2561DL-1Y-F3-A Embossed Tape 2 000 pcs/reel approved) PS2561DL-1
PS2561DL2-1-E3 PS2561DL2-1Y-E3-A Embossed Tape 1 000 pcs/reel PS2561DL2-1
PS2561D-1-V PS2561D-1Y-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2561D-1
PS2561DL-1-V PS2561DL-1Y-V-A (VDE0884 Part2) PS2561DL-1
PS2561DL1-1-V PS2561DL1-1Y-V-A approved (Option) PS2561DL1-1
PS2561DL2-1-V PS2561DL2-1Y-V-A PS2561DL2-1
PS2561DL-1-V-F3 PS2561DL-1Y-V-F3-A Embossed Tape 2 000 pcs/reel PS 2561DL-1
PS2561DL2-1-V-E3 PS2561DL2-1Y-V-E3-A Embossed Tape 1 000 pcs/reel PS 2561DL2-1
*1 For the application of the Safety Standard, following part number should be used.
Data Sheet PN10777EJ02V0DS
4
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Reverse Voltage VR6 V
Forward Current (DC) IF40 mA
Power Dissipation Derating
Δ
PD/°C 1.5 mW/°C
Power Dissipation PD150 mW
Peak Forward Current*1 IFP 1 A
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7 V
Collector Current IC50 mA
Power Dissipation Derating
Δ
PC/°C 1.5 mW/°C
Power Dissipation PC150 mW
Isolation Voltage*2 BV 5 000 Vr.m.s.
Operating Ambient Temperature TA –55 to +110 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10777EJ02V0DS 5
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF
Transistor Collector to Emitter Dark
Current ICEO VCE = 48 V, IF = 0 mA 100 nA
IF = 5 mA, VCE = 5 V 50 160 400 % Coupled Current Transfer Ratio
(IC/IF)*1 CTR
IF = 1 mA, VCE = 5 V 10 80
Collector Saturation
Voltage VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time*2 tr VCC = 10 V, IC = 2 mA, RL = 100 Ω3
μ
s
Fall Time*2 tf5
*1 CTR rank
CTR Rank CTR (%) Conditions
80 to 160 IF = 5 mA, VCE = 5 V
H 16 and larger IF = 1 mA, VCE = 5 V
100 to 200 IF = 5 mA, VCE = 5 V
Q 20 and larger IF = 1 mA, VCE = 5 V
130 to 260 IF = 5 mA, VCE = 5 V
W 26 and larger IF = 1 mA, VCE = 5 V
200 to 400 IF = 5 mA, VCE = 5 V
L 40 and larger IF = 1 mA, VCE = 5 V
50 to 400 IF = 5 mA, VCE = 5 V
N 10 and larger IF = 1 mA, VCE = 5 V
*2 Test circuit for switching time
Input
Output
90%
10%
tr
td
tf
ts
ton toff
V
CC
V
OUT
I
F
R
L
= 100 Ω
50 Ω
In monitor
PW = 100 s
Duty cycle = 1/10
μ
Pulse Input
Data Sheet PN10777EJ02V0DS
6
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
150
100
50
0 25 50 75 100
110
125 150
1.5 mW/°C
150
100
50
25 50 75 100
110
1250 150
10 000
100 110
1 000
100
10
1
7550250–25–50
V
CE
= 48 V
1.5 mW/°C
24 V
10 V
5 V
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0°C
–25°C
–55°C
+60°C
+25°C
T
A
= +100°C
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
20
02
468
I
F
= 1 mA
15
5
10
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Collector Saturation Voltage V
CE (sat)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
(V)
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0
I
F
= 1 mA
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10777EJ02V0DS 7
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
Ambient Temperature TA (°C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–
50
–
25 0 25 50 75 100
CTR:270%
CTR:130%
Load Resistance RL (Ω)
Switching Time t ( s)
μ
SWITCHING TIME vs.
LOAD RESISTANCE
0.1
1
10
100
10 100 1 000 10 000
t
f
t
r
t
d
t
s
IC = 2 mA, VCC = 10 V,
CTR = 216%
Frequency f (kHz)
Normalized Gain GV
FREQUENCY RESPONSE
RL = 1 kΩ
300 Ω
100 Ω
IF = 5 mA,
VCE = 5 V
5
0
–
5
–
10
–
15
–
20
–
25
0.1 1 10 100 1 000
Load Resistance RL (kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
1
10
100
1 000
1 10 100
t
r
t
d
t
s
t
f
IF = 5 mA, VCC = 5 V,
CTR = 216%
Forward Current IF (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
0
50
150
100
200
250
300
350
400
0.01 0.1 1 10
VCE = 5 V,
n = 5
100
B
C
Sample A
D
E
Remark The graphs indicate nominal characteristics.
Data Sheet PN10777EJ02V0DS
8
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
TAPING SPECIFICATIONS (UNIT : mm)
Tape Direction
PS2561DL-1-F3
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10777EJ02V0DS 9
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
Tape Direction
PS2561DL2-1-E3
Outline and Dimensions (Tape)
2.05±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.4±0.2
12.35±0.15
0.38
11.5±0.1
24.0±0.3
6.6±0.2
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
29.5±1.0
25.5±1.0
23.9 to 27.4
Outer edge of
flange
Data Sheet PN10777EJ02V0DS
10
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
D
C
B
A
Part Number
PS2561DL
PS2561DL2
Lead Bending A
lead bending type (Gull-wing)
for long creepage distance (surface mount)
lead bending type (Gull-wing)
for surface mount
8.2
10.2
B
2.54
2.54
C
1.7
1.7
D
2.2
2.2
Data Sheet PN10777EJ02V0DS 11
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10777EJ02V0DS
12
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10777EJ02V0DS 13
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (1/2) (PS2561D-1, PS2561DL-1)
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
UIORM
Upr 890
1 335 Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 669 Vpeak
Highest permissible overvoltage UTR 8 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +110 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C Ris MIN.
Ris MIN. 1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
Data Sheet PN10777EJ02V0DS
14
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (2/2) (PS2561DL1-1, PS2561DL2-1)
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
UIORM
Upr 1 130
1 695 Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 2 119 Vpeak
Highest permissible overvoltage UTR 8 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +110 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C Ris MIN.
Ris MIN. 1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
Data Sheet PN10777EJ02V0DS 15
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
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controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When
exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
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