NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 3401 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 460 nm bis 1080 nm * Hohe Linearitat * Nur gegurtet lieferbar * Especially suitable for applications from 460 nm to 1080 nm * High linearity * Available only on tape and reel Anwendungen Applications * * * * * * * * Umgebungslicht-Detektor Lichtschranken Industrieelektronik Messen/Steuern/Regeln" Ambient light detector Photointerrupters Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom , (Ee=0,1mW/cm2,=950nm VCE = 5 V) Photocurrent Ipce (A) SFH 3401 Q65110A2635 63...320 SFH 3401-2/3 Q65110A2644 100...320 2008-07-30 1 SFH 3401 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ...+ 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 20 V Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 120 mW Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 450 K/W 2008-07-30 2 SFH 3401 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 460 ...1080 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.55 mm2 Abmessungen der Chipflache Dimensions of chip area Lx B Lx W 1x 1 mm x mm Halbwinkel Half angle 60 Grad deg. Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 15 pF Kapazitat, VCB = 0 V, f = 1 MHz, E = 0 Capacitance CCB 45 pF Kapazitat, VEB = 0 V, f = 1 MHz, E = 0 Capacitance CEB 19 pF Dunkelstrom Dark current VCE = 10 V, E = 0 ICEO 3 (200) nA IPCB IPCB 0.28 4.8 A A Fotostrom der Kollektor-Basis Fotodiode Photocurrent of collektor-base photodiode Ee = 0.1 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V 2008-07-30 3 SFH 3401 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -1 -2 -3 IPCE 63 ...125 100 ...200 160 ...320 A IPCE 1.65 2.6 4.2 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr , t f 16 24 34 s Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 VCEsat 170 170 170 mV Stromverstarkung Current gain Ee = 0.1 mW/cm2, VCE = 5 V IPCE/IPCB 340 530 860 - Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht A/ standard light A, VCE = 5 V 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2008-07-30 0.8 0.6 0.4 0 20 40 60 80 100 4 120 SFH 3401 Rel. Spectral Sensitivity, Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V OHF02332 100 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF00326 10 1 mA pce S rel % C CE 1 2 3 10 0 80 OHF02344 20 pF 15 70 10 -1 60 10 50 10 40 -2 30 5 10 -3 20 10 0 400 500 600 700 800 900 nm 1100 Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE OHF01524 1.6 PCE 25 10 -4 -3 10 10 -2 mW/cm 2 Ee Dark Current ICEO = f (TA), VCE = 10 V, E = 0 10 -1 10 0 10 1 V 10 2 VCE Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 OHF02342 10 3 nA CEO 1.4 0 -2 10 10 0 C CB OHF00332 50 pF 45 40 10 2 1.2 35 1.0 30 0.8 10 1 25 20 0.6 15 10 0 0.4 10 0.2 5 0 -25 0 25 50 75 C 100 TA pce OHF00327 40 60 0 -2 10 80 C 100 TA 10 -1 10 0 10 1 V 10 2 V CB Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 OHF02341 10 2 nA CEO 1.0 mW/cm 2 2.5 20 Dark Current ICEO = f (VCE), E = 0 Photocurrent IPCE = f (VCE) SFH 3401-3 3.0 mA 10 -1 0 C EB OHF00333 20 pF 18 16 10 1 14 2.0 12 10 0 1.5 10 0.5 mW/cm 2 8 1.0 6 10 -1 0.25 mW/cm 2 4 0.5 0.1 mW/cm 2 0 2 10 -2 0 10 2008-07-30 20 30 40 50 60 V 70 Vce 0 10 20 30 5 40 50 V 70 V CE 0 -2 10 10 -1 10 0 10 1 V 10 2 V EB SFH 3401 Total Power Dissipation Ptot = f (TA) OHFD0228 140 mW Photocurrent IPCE = f (VCE), IB = Parameter OHF00334 6 mA PCE Ptot 120 6 A 5 5 A 100 4 4 A 80 3 3 A 60 2 2 A 1 1 A 40 20 0 0 20 2008-07-30 40 60 80 C 100 TA 0 0 2 4 6 8 10 12 14 16 V 20 V CE 6 SFH 3401 Mazeichnung Package Outlines Mae in mm (inch) / Dimensions in mm (inch). Anschlussbelegung Pin configuration Pin 1 = Kollektor / collector Pin 2 = Basis / base Pin 3 = Emitter / emitter 0.3 1.3 1 Empfohlenes Lotpaddesign Recommended Solderpad Design 1.8 2.4 1.8 Paddesign for improved heat dissipation OHF02393 Mae in mm / Dimensions in mm. 2008-07-30 Padgeometrie fur verbesserte Warmeableitung 7 SFH 3401 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t PPublished by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-07-30 8