TH7426AVWKSNGS - Atmel Corporation

March 1998 1/20

TH7426A/27A

NEAR INFRARED InGaAs LINEAR IMAGE SENSOR

300 PIXELS

DESCRIPTION

These devices are based on a 300 InGaAs photodiode li-

near array, with a 26µm pitch, using an in line pixel layout or

a staggered pixel layout.

Two 150:1 CCD multiplexor chips, offering memory and de-

layed readout capability, are hybridized on both sides of the

photodiode array so as to build a complete module.

Specially designed to allow an accurate butting, those mo-

dules could be tied together on request so as to provide an

array extension with only one dead pixel at the splice.

These devices are also available in a full CMOS interface

version :

TH74KA26A/TH74KA27A or TH74KB26A/TH74KB27A.

MAIN FEATURES

nNear infrared spectral response: 0.8µm to 1.7µm

nRoom temperature operation

nLow noise

nHigh detectivity, wide dynamic range (>10 000)

nHigh linearity, high Modulation Transfer Function (MTF)

nHigh output data rate : up to 6 MHz

nIntrinsic antiblooming

nBuilt in thermoelectric cooler and temperature sensor

available

nAccurate mechanical indexes (ready to mount)

SELECTION GUIDE

REFERENCE PIXEL COUNT LAYOUT PIXEL AREA PITCH NUMBER OF

VIDEO OUTPUTS

TH7426A 299 In line 20x30µm² 26µm 2

TH7427A 299 Staggered 30x30µm² 26µm 2

TH7428A 599 In line 20x30µm² 26µm 4

TH7429A 599 Staggered 30x30µm² 26µm 4

APPLICATIONS

nSuited for Near Infrared imaging

nThermal imaging in the 200°C to 800°C range

nHigh resolution multichannel spectrometry

nFluorescence free Raman spectrophotometry

nOn-line inspection and monitoring

GEOMETRICAL CHARACTERISTICS

ELEMENT BLOCK DIAGRAM

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TH7426A/27A

ABSOLUTE MAXIMUM RATINGS

Supply voltages (compare to Vss, at any pin) 0 to +20V

Transient voltages (compare to Vss, at any pin) 0 to +25V

DC current (at any pin), 10mA

Except - thermoelectric cooler pins 6A

except - temperature sensor +/-3mA

Operating temperature (temperature variation limited to 6°C/min) -40 to +85°C

Storage temperature (temperature variation limited to 6°C/min) -40 to +85°C

Electrostatic discharge sensitivity, MIL-STD-883 method 3015 device Class 1

Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent devices failure. Functionality at

or above these limits is not implied. Exposure to maximum ratings for extended periods may affect device reliability.

To avoid any performance degradation,the device must be handled with grounded bracelet and stored in the conductive

packing used for shipment.

TABLE 1 - ELECTRO-OPTICAL CHARACTERISTICS

15°C internal operating temperature, 3ms integration time, typical voltage input (otherwise specified).

Parameter Symbol TH 7426 TH 7427 Unit Remarks

Min. Typ. Max. Min Typ. Max.

Dark voltage signal

mean

isolated pixels

(photodiode dark current)

)

0.6 100 4

0.8 120 mV

See Fig. 6

See note (1)

Noise in darkness (rms)

mean

isolated pixels σVD200 1200 1.2 µV

Absolute photo response

mean

non uniformity

non linearity over 1.5V range

PRNU 10

1+/-10 15

1+/-10 Vcm²/µJ

See Fig. 3-4-5

Spectral response

Cut-off wavelength

Temperature shift λc

dλc/dT 1.66 1.68

1.1 1.73 1.66 1.68

1.1 173 µm

nm/°C At 50% R(λ)

max

Modulation transfer function

across array

along array

MTF 0.35

0.55 0.50

0.68 0.54

0.73 0.35

0.35 0.50

0.50 0.54

0.54

At 19.2 lp/mm

See note (2)

Output saturation voltage Vsat 2.5 2.5 V Depends on

preload level.

See Fig. 7

Noise equivalent power at

λ=1.65µmNEP 0.35

6.7

0.35

4.4

nWcm-2

BW=1Hz

BW=167Hz

Specific detectivity at λ=1.65µmD* 5.1012

8.1011 6.1012

1.1012 cmHz1/2W-1

cmHz1/2W-1 BW=1Hz

BW=167Hz

Electron to voltage conversion factor

Quantum efficiency Fc

QE 0.26

0.8 0.26

0.8 µV/e

e/ph See Fig. 5

Image grade

(number of blemishes) J

See note (3)

Electrical sample

Note : 1 Already taken into account in mean VD(VD=IdTIFc; TI=Integration time ; q = 1.6 10-19 C)

Note : 2 “Maximum value” is the theoretical value computed using the corresponding diode size

Note : 3 a pixel is considered as a blemish if :

or - its dark voltage is higher than isolated pixel max value

or - its noise is higher than isolated pixel noise max value

or - its PRNU is higher than +/- 10 %

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TABLE 2 - CONNECTION DIAGRAMS

Pin n° EVEN

Mo-

dule #

Sym-

bol Designation Pin n° ODD

Mo-

dule #

Sym-

bol Designation

1...2 NC Not connected 44...51 TC+ Thermoelectric cooler (positive node)

see notes (2) (3)

3...6 TS Temperature sensor see note (3) 52...55 NC Not connected

7...9 NC Not connected 56 O VG1 Lateral skimming gate bias

10 DNC Do not connect see note (4) 57 O φXPhotodiode lateral transfer clock

11...14 NC Not connected 58 O φPL Electrical injection clock

15 E VDD Output amplifier drain & RE supplies 59 O VGL1 Preload skimming gate bias

16 E VOS Video output signal (pixels 0-298) 60 O VGL2 Preload storage gate bias

17 E GND Video ground 61 O φL2 Shift register clock 2 (gated by RE)

18 E VSS CCD substrate bias (phases return) 62 O RE Read enable control signal

(pixels 1-299)

19 E φRCCD reset clock 63 O φL1 Shift register clock 1

20 E VDR Reset bias 64 O VN Photodiode substrate bias see note (1)

21 E VGS Output gate bias 65 O VGS Output gate bias

22 E VN Photodiode substrate bias see note (1) 66 O VDR Reset bias

23 E φL1 Shift register clock 1 67 O φRCCD reset clock

24 E RE Read enable control signal

(pixels 0-298) 68 O VSS CCD substrate bias (phases return)

25 E φL2 Shift register clock 2 (gated by RE) 69 O GND Video ground

26 E VGL2 Preload storage gate bias 70 O VOS Video output signal (pixels 1-299)

27 E VGL1 Preload skimming gate bias 71 O VDD Output amplifier drain & RE supplies

28 E φPL Electrical injection clock 72...75 NC Not connected

29 E φXPhotodiode lateral transfer clock 76 DNC Do not connect see note (4)

30 E VG1 Lateral skimming gate bias 77...79 NC Not connected

31...34 NC Not connected 80...83 TS Temperature sensor see note (3)

35...42 TC- Thermoelectric cooler (negative

node) see notes (2) (3) 84 NC Not connected

43 NC Not connected

Notes : 1 Pin 22 and 64 are internally connected together

Notes : 2 In each group every pins must be connected and tied together in order to lower pin current density

Notes : 3 Not connected on non cooled package

Notes : 4 DNC (Do Not Connect). Pins which are internally connected and must not be used.

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PIN DESCRIPTION

Odd and Even channels are fully independent, therefore same pin function will be found on odd and even sides.

FPL This is the preload injection stage electrical input. Each ΦPL pulse down overfills preload storage capacitance with

electrons. ΦPL is connected to a diode cathode which anode is internally tied to Vss.

VGL1 This is the preload stage skimming gate. Its bias determines the voltage up to which preload storage capacitance

will be biased. Thus it drives preload level.

VGL2 This is the storage capacitance grid bias. It determines the bottom voltage of preload storing well, while VGL1 deter-

mines its top level. Preload capacitance thus is charged up proportionately to (VGL2 -V

GL1) bias difference.

FL1 This is the main register storage grid clock. Charges are stored under ΦL1 when transfer is disabled (RE at low le-

vel). FL1 is also used for lateral transfers to input nodes.

FL2 This is the main register transfer grid clock. ΦL2 is used to isolate FL1 content during lateral transfers. The main re-

gister is beginning and ending with FL2 which therefore controls main register access and outputs. FL2 is gated by

RE input, it is internally pulled down when RE is low, preventing transfers, preload injection, read out and isolating

each FL1 well.

RE This is the “Read Enable” input. When high, it allows ΦL2 input connection to main register, when low, main register

corresponding grids are pulled down whatever FL2 input level is.

This input helps to serially read out two or more multiplexors with one single FL2 signal for all. Data are stored into

the main register as long as RE is low, thus read out can occur later on.

FXThis is the lateral transfer grid command. Lateral transfer is allowed when FXis at high level. FXis common to all

input nodes, all photodiode information is collected at the same time.

VG1 This is the lateral input stage skimming grid bias. This grid determines photodiodes reset bias, always the same

from integration time to integration time. After photodiode reset (input node capacitance reset) extra charges leading

to overcrossing VG1 level are skimmed back into ΦL1 main register wells.

VNThis is the InGaAs photodiode common cathode bias. VNis available on odd and ev en side, however, both pins are

connected together, to photodiode substrate.

VGS This is main register output grid bias. It is used to isolate read out capacitance from main register. It allows charges

to be read out when ΦL2 is at low level.

VDR This is the read out capacitance reset bias. After each single read out, read out capacitance is cleared off (reset) to

VDR level, during FRclock high state.

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VDD This is the output amplifier power supply (high side). It also supplies the “Read Enable” switching device which ex-

plains that IDD is different whether RE is at high or low level.

GND This is the output amplifier low side power supply. GND is linked to VSS through a diode, GND being the cathode

node. Thus GND must always be more positive than or equal to Vss.

It must be noticed that “RE” switching device is powered from VDD to VSS.G

ND is specific to output amplifier.

VOS This is the amplifier output.

VSS This is the CCD multiplexor substrate bias. All applied biases and clock levels must be more positive or equal to VSS .

TSThese are the internal temperature sensor connections. Temperature sensor is floating with respect to all other pin

connections. Pins 3 to 6 are internally connected together as well as pin 80 to 83.

TC+ This is the internal thermoelectric cooler positive input (current enters) (all pins must be externally connected in or-

der to lower current density into each pin).

TC- This is the internal thermoelectric cooler negative input (current goes out). Thermoelectric cooler connections are

floating, with respect to all other pins. All pins must be externally connected in order to lower individual pin current

density. It is advised to avoid pulsed current regulations to drive TE cooler, since it may result in EMC troubleshoo-

ting inside component cavity.

FUNCTIONAL DESCRIPTION

Individual InGaAs diodes are reversed bias. The cathode node is common to all diodes and connected to a fixed potential

Vn. The anode of each diode is wire bonded to a lateral entrance of the readout CCD stage.

These diodes behave as capacitors whose leakage current depends on dark current and illumination. This current tends to

decrease the voltage across the capacitor. Each diode capacity is first preloaded with a calibrated amount of negative char-

ges (Qb). After an integration time (TI), the amount of removed charges (QI) figures out the cumulated light absorption. So

the measurement of the remaining charge amount (Qs) in the diode capacitor gives access to QI (QI = Qb - Qs). This is

called “Vidicon” readout mode.

CCD multiplexors fulfill all those operations. They provide preloading and readout functions for the separate odd and even

pixel groups. The main CCD features consist in a two phase register (φL1 and φL2) with longitudinal and lateral transfer ca-

pability. Following is a description of how those devices keep photodiodes under control and capture pixel signals.

Four main functions can be considered :

- Preload

The potential gap between the two gates [VGL1-VGL2] defines a potential well for preload calibration (Qb), its filling

and spilling occurs using an injection diode φPL.

- Main register charge handling

At each individual transfer step, Qs moves out of the 150th stage, while Qb moves in the first stage. The longitudinal

register stage requires a series of at least 150 steps to complete the preloading cycle. This transfer operation is inhi-

bited if RE (read enable) input is maintained at a low level.

Photodiode information collection (and reset)

The lateral input stage consists in 150 input diodes, each of them directly wire bonded to one photodiode, and con-

trolled under a single common biasing gate VG1 and a lateral transfer gate φx.

At the end of integration time (see timing diagram Figure 1) :

- the preload charges Qb, stored in the register, are transferred simultaneously to the 150 photodiodes when φxis at

high level and φL1 at low level, allowing the photodiode reset.

- charges in excess (identified as Qs) are collected back to the register by forcing φL1 at high level. At this step the

new TI starts.

To isolate each stage from the other one, φL2 must be at low level during all lateral transfer operations.

- Data read-out

At the end of the photodiode reset operation :

- if RE is forced to low level (Timing Diagram - Figure 1), all Qs information remain stored in the register and so, rea-

dout is delayed .According to this situation a next photodiode reset procedure can’t be operated until the full longitu-

dinal transfer takes place (150 steps minimum).

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TH7426A/27A

- if RE is activated or always at high level (Timing Diagram - Figure 2), each stored charge is transferred to the rea-

dout capacitance; this continuous readout mode is recommended for long integration time.

Qs conversion into voltage is supported by the readout stage capacitance, linked to a low output impedance ampli-

fier. This capacitance is reset at VDR bias, before each pixel readout operation (high level φR).

Due to the “Vidicon” read out mode, Qb level needs adjustment so as to provide enough carriers to sustain photocurrent

and dark current during the integration time. Pixel antiblooming is also resulting from “Vidicon mode” since photodiodes

cannot consume more electrons than Qb.

Antismearing (frame to frame antiblooming) efficiency depends on the photodiode reset conditions, reverse bias recovering

need a minimum Qb condition such as :

Qb>Clat .VD

where : - Clat is the individual lateral input node capacitance, Clat ~1.5 pF (including photodiode, bonding pads...)

where : -V

Dis the photodiode bias : VD=V

N- 0.78VG1- 8.7

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MULTIPLEXOR TIMING DIAGRAM

* First Even output data is always at preload level (multiplexor corresponding input is not connected — See “Element Block Diagram”)

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TABLE3-STATICCHARACTERISTICS

Symbol Pin n°

EVEN/ODD Function Value Unit Note

Min Typ Max

VDD 15/71 Output amplifier 17.5 18 18.5 V (1)

IDD with Read Enable disabled

with Read Enable activated 0.7

1.1 mA

mA (2)

VDR 20/66 Reset bias 15.3 15.5 16.5 V (1)

VN22/64 internally

connected Photodiode substrate bias 11 11.3 11.5 V

GND 17/69 Video ground 0 2 V (3)

VSS 18/68 Register substrate V

VG1 30/56 Lateral skimming gate 1.9 2 2.1 V

VGL1 27/59 Preload skimming gate 2.8 3 5 V (4)

VGL2 26/60 Preload storage gate 3 4 5 V (4)

VGS 21/65 Register output gate 6.2 6.5 7 V

Note : 1 VDD-VDR >1.8V

Note : 2 For each VDD Pin

Note : 3 Recommendation: tied to VSS or, for best operation, hold at +0.5V above VSS

Note : 4 VGL1 and VGL2 are used to calibrate preloading level see Fig. 7; to minimise noise effect, it is recommended

Notes : to get VGL1 and VGL2 from the same low noise supply.

TABLE4-DYNAMIC CHARACTERISTICS

Symbol Pin n°

EVEN/ODD Function Value Unit Note

Min Typ Max

ΦL1 low

high 23/63 Longitudinal transfer stage

(120 pF typical) 0.1

90.3

9.5 0.7

10.5 V

ΦL2 low

high 25/61 (120 pF typical if all RE enabled) 0.1

90.3

9.5 0.7

10.5 V

ΦPL low

high 28/58 Preload injection diode

(10 pF typ.) 5.8

9.5 6

12 6.7

12.5 V

ΦRlow

high 19/67 Read out reset gate

(10 pF typ.) 0.1

11.5 0.3

12 0.7

12.5 V

ΦXlow

high 29/57 Lateral transfer stage

(10 pF typ.) 0.1

7.8 0.3

80.7

8.2 V

RE low

high 24/62 Read enable

(15 pF typ.) 0.1

(ΦL2 high

+2,5V)

0.2 0.4

15 V

TABLE 5 - MISCELLANEOUS DATA

Symbol Pin n° Function Value Unit Note

Min Typ Max

ITH 35 to 42 Thermo cooler 3 6 A (5)

44 to 51

VOS(DC) 16,7 Video signal DC level (wrt Vss) 12 V (7)

ZOOutput impedance 1.2 KΩ(7)

Rpt

(at 0°C) 3to6

80 to 83 Temperature sensor resistance

(recommended max. current 1 mA) 100 Ω(6)

FPTransfer frequency 0.5 3 MHz

Note : 5 See Fig. 8a, 8b, 8c, 8d.

Note : 6 See Fig. 9.

Note : 7 Short circuit to Gnd or Vss exceeding 1 min duration may permanently damage the device

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TABLE 6 - TIMING AND SWITCHING CHARACTERISTICS

Parameter Symbol Value Unit Note

Min. Typ. Max.

INTEGRATION TIME TI 0.05 3 ms

CLOCK PERIOD Tck 0.33 2 µs (3)

READ ENABLE

Duration TRE 149.5Tck+t1RE+t2RE µs

Rise time or fall time tr/tf 25 250 ns (4)

Delay t1RE 0 120 ns

Set-up RE t2RE 150 850 ns

LATERAL TRANSFER

Duration TΦx522 µs

Φx rise time or fall time tr/tf 25 150 ns (4)

Φ1 low level hold time Tx1 1 1.7 µs

Φ2 low level hold time Tx2 4 20 µs

Delay tΦx100 980 ns

Readout delay tΦ1100 200 ns

LONGITUDINAL TRANSFER

ΦL1 rise time or fall time tr/tf 25 150 ns (4)

ΦL2 rise time or fall time tr/tf 25 150 ns (4)

Preload duration TΦPL 35 240 ns

Preload rise time or fall time tr/tf 25 50 ns (4)

Preload delay tPL 0 80 ns

Skimming time tsk 70 500 ns (1)

READOUT DIODE RESET

Duration TΦR35 240 ns (2)

Rise time or fall time tr/tf 25 120 ns (4)

Delay tR 0 10 ns (2)

VIDEO SIGNAL SET-UP TIME tvideo 100 ns

Note : 1 Better if no clock transition occurs during “tsk” time.

Note : 2 tR+TΦR<ΦL2 high level duration.

Note : 3 Duty cycle: 50%

Note : 4 Rise time (tr) and fall time (tf) specified between 10% and 90%

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ELECTRO-OPTICAL TYPICAL CHARACTERISTICS

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Figure 3 : Silicon Window typical spectral response Figure 4 : Clear window typical spectral response

Figure 6 : Dark voltage per 1ms integration time

Figure 6 : vs internal operating temperature

Figure 5 : Clear window & Silicon window quantum efficiency

Figure 7 : Typical preload voltage vs VGL1 and VGL2 gate voltages

THERMAL CHARACTERISTICS (single stage TE cooled package -subvariant N- only)

T°C<0 Rpt = 100 {1+[3.90802 10-3 T] - [0.580195 10-6 T2] - [4.7350 10-12(T-100) T3]}

T°C>0 Rpt = 100 {1+[3.90802 10-3 T] - [0.580195 10-6 T2]}

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Figure 8a : Internal temperature vs

Figure 8a : Thermo-electric cooler current Figure 8b : Internal to rear face temperature gap vs

Figure 8b : Thermo-electric cooler current

Figure 8c : Thermo-electric cooler voltage vs.

Figure 8c : Thermo-electric cooler current

Figure 9 : Pt resistance variation R = R(T°C) - R(0°C) vs. temperature

Figure 8d : Rear face power dissipation vs.

Figure 8d : Thermo-electric cooler current

OUTLINE DRAWING

In the standard version devices are hermetically sealed in a Jlead 84 like package with a near IR transparent window (see

next drawing). The package basement includes a thermoelectric cooler and a temperature sensor, see Figures 8-9 for ther-

mal characteristics.

Silicon, with an antireflective coating is the window material. An optional version used an AR coated glass and an additional

frame (numerical aperture f/3) to prevent parasitic lateral visible light.

The photodiode array location is mechanically indexed upon the package rear face (opposite to the window) for fast accu-

rate mounting.

PACKAGE VARIANT (N)

(Thermoelectric cooler version)

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TH7426A/27A

ORDERING INFORMATION

TH7426AV(1) W(2) a* b* c* G d*

TH7427AV(1) W(2) a* b* c* G d*

(1) Temperature range

V = -40 to 85°C (see § c*)

(2) Package family

Ceramic Jlead type

a* Image grade

J, K, O, E see Table 1

b* Package variant

S = standard silicon window

R = clear glass window

N = non sealed removable window

c* Package sub-variant

(The detector temperature depends on the surrounding ambient and on device energy budget which is directly

related to the built in thermo-cooler option efficiency.)

- = without thermo-electric cooler; from -40 to +15°C full performances(derated over)

N = 1 stage thermo-electric cooler; from -40 to +60°C full performances (derated over)

P = 3 stages thermo-electric cooler; from -40 to +85°C full performances

d* Quality level

- = standard

D/T = industrial level

B/T = military levels

S = space level

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TH7426A/27A

APPLICATION INFORMATION

- Preload generation

Preload is fed up when ΦPL is at low level. This process needs few time to be completed ( >35 ns). Then skimming is nee-

ded to calibrate Qb. This step needs as much as possible time. Therefore it is recommended to activate ΦPL as soon as

FL2 is at low level, in order to spend most of FL2 low level duration for skimming.

Qb depends on (VGL2 -V

GL1 ) difference, thus noise on Qb may result from differential fluctuations between VGL1 and VGL2.It

is therefore recommended to get VGL1 and VGL2 biases on each side (Odd or Even) from the same power supply line.

- Preload level adjustment

Preload level must be chosen so as to covered both expected maximum signal and dark current resulting signal. It must be noti-

ced that the “Vidicon mode” implies output signal has the largest amplitude in darkness (since most of Qb is to be readout).

Since output signal treatment difficulty may arise from its large amplitude it is better to reduce as much as possible its dyna-

mic, thus to reduce preload level to the minimum required.

From Figure 6, dark voltage can be deduced, photosignal is computed from Figures3&4andapplication data (light flux, in-

tegration time). Preload must be 200 mV in excess to dark voltage and maximum photosignal sum. Preload can be adjusted

with (VGL2 -V

GL1 ) biases, as indicated in Figure 7, however it is recommended to act first on VGL2. Direct read out of pre-

load level is possible in forcing ΦXat low level avoiding lateral transfer and photodiode read out.

TH7426A/27A maximum preload is about 2.5 V (corresponding to 107electrons).

- Photodiode information collection

As explained this operation needs two steps :

a). Qb injection into input nodes.

b). Skimming back into main register of extra charges.

Step a) needs at least 1 µs to be completed (TX1). However, step b) is a longer process, which duration influences lateral

transfer efficiency. It has been measured that 20 µs is needed for less than1%transfer non efficiency which raises to 2 %

for 4 µs skimming time (TX2).

Thus it is recommended to allow as long as possible skimming time, compatible with application requirement.

- Output signal format

Figures 1 and 2 give details on output signal. Each reset (ΦR) pulse pulls up the output at reset level related to VDR bias.

Using typical biases, reset level reaches about 12 volts with respect to Vss. Notice that FRmust be pulsed only when FL2

is at high level.

Just after reset pulse, output level is stabilizing to a steady level called “floating diode level”.This level is the very reset level

to be taken into account for useful signal amplitude measurement. It is about 200 mV lower than reset level.

Then on FL2 falling edge, charges coming from main register last stage arrive. Consequently, output signal drops down.

The new steady level reached, counted from “floating diode” level represents the useful information - Uos -

Uos amplitude is maximum when no lateral transfer has occurred, since it represents preload level. In darkness, after pho-

todiode read out (lateral transfer) Uos is reduced by dark voltage signal. Under illumination Uos is still smaller until satura-

tion occurs (whole preload consumption), in this situation “floating diode” level is maintained until next pixel readout.

- Read enable operation

RE input simplifies device operation since it allows to use continuous FL2 clocks. However, one can force RE at high level

and generate external FL2 interruption during FXtransfer. In this case, first pixel data will be read out at first falling edge of

FL2. After 150 FL2 periods all pixel data will have been read out, on 151st FL2 period, output will be unused preload and so

on until next FXcycle.

When using RE input, it must be noticed that RE duration must at least allow 150 main register transfers (FL2 periods) in

order to guaranty that all main register stages contain a preload (Qb) before next FXcycle. Otherwise all photodiodes will

not be properly reset at next FXcycle.

When RE is low, output signal is continuously at floating diode level, with FRtransparencies.

- Interlacing odd even

As odd and even sides are fully separated, it is possible to drive odd and even side with 180° phase shifted FL1 and FL2

(FPL ,FRwith same phase with respect to their FL2), FXbeing identicals. In this manner Odd output signals will be de-

layed by half a Tck period with respect to Even outputs allowing, after common sampling, natural multiplexing and double

pixel data rate. This opportunity is presented in application hints (Figures 10 to 12).

- Mechanical mounting

Accurate mechanical references are provided in N and P subvariant packages (see ordering information and outline dra-

wings). If optics are mechanically referred to these packages rear face, no tuning strategy could be implemented for scale

manufacturing.

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APPLICATION HINTS

Figure 10 : Application hint : device operation

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Figure 11 : Application hint : signal treatment

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Figure 12 : Timing diagramm for figure 10 &11 (Output data : 1 MHz)

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NOTE

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Information furnished is believed to be accurate and reliable. However THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES

assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of

third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent

rights of THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied. THOMSON-CSF

SEMICONDUCTEURS SPECIFIQUES products are not authorized for use as critical components in life support devices or

systems without express written approval from THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. 1998 THOMSON-

This product is manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - 38521 SAINT-EGREVE / FRANCE.

For further information please contact : THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - Route Départementale

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E-mail : lafrique@tcs.thomson.fr - Internet : http://www.tcs.thomson-csf.com

ORDER CODE : DSTH7426A/27AT/0398 Créé / réalisé par Graphic Express - Tél. : 01.46.55.27.24 - 10236 - 03/98