HMHAA280R2V - ON SEMICONDUCTOR

August, 2018 − Rev. 6

1Publication Order Number:

HMHA2801B/D

HMHA281, HMHA2801 Series

4-Pin Half-Pitch Mini-Flat

Phototransistor

Optocouplers

Description

The HMHA281 and HMHA2801 series devices consist of a gallium

arsenide infrared emitting diode driving a silicon phototransistor in a

compact 4−pin mini−flat package. The lead pitch is 1.27 mm.

Features

•Compact 4−Pin Package

♦2.4 mm Maximum Standoff Height

♦Half−Pitch Leads for Optimum Board Space Savings

•Current Transfer Ratio:

♦HMHA281: 50% to 600%

♦HMHA2801: 80% to 600%

♦HMHA2801A: 80% to 160%

♦HMHA2801B: 130% to 260%

♦HMHA2801C: 200% to 400%

•Safety and Regulatory Approvals:

♦UL1577, 3.750 VACRMS for 1 Minute

♦DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Digital Logic Inputs

•Microprocessor Inputs

•Power Supply Monitor

•Twisted Pair Line Receiver

•Telephone Line Receiver

MPF4

CASE 100AL

www.onsemi.com

See detailed ordering and shipping information on page 7 of

this data sheet.

ORDERING INFORMATION

ON = ON Semiconductor Logo

281 = Device Number

V = DIN EN/IEC60747−5−5 Option (only

appears on component ordered with this

option)

X = One−Digit Year Code, e.g., ”5”

YY = Digit Work Week, Ranging from ”01” to ”53”

M1 = Assembly Package Code

281

VXYYM1

MARKING DIAGRAM

Phototransistor Optocoupler

ANODE

CATHODE

COLLECTOR

EMITTER

HMHA281, HMHA2801 Series

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Table 1. SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical

insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)

Parameter Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV

< 300 VRMS I–III

Climatic Classification 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test

with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test

with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak

VIORM Maximum Working Insulation Voltage 565 Vpeak

VIOTM Highest Allowable Over−Voltage 4000 Vpeak

External Creepage ≥5mm

External Clearance ≥5mm

DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm

TS Case Temperature (Note 1) 150 °C

IS, INPUT Input Current (Note 1) 200 mA

PS, OUTPUT Output Power (Note 1) 300 mW

RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >109W

1. Safety limit values – maximum values allowed in the event of a failure.

HMHA281, HMHA2801 Series

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

TOTAL PACKAGE

TSTG Storage Temperature −55 to +125 °C

TOPR Operating Temperature −55 to +100 °C

TJJunction Temperature −40 to +125 °C

PDTotal Device Power Dissipation @ TA = 25°C 210 mW

Derate Above 25°C 2.1 mW/°C

EMITTER

IF (avg) Continuous Forward Current 50 mA

IF (pk) Peak Forward Current (1 ms pulse, 300 pps) 1 A

VRReverse Input Voltage 6 V

PDLED Power Dissipation @ TA = 25°C 60 mW

Derate Above 25°C 0.6 mW/°C

DETECTOR

ICContinuous Collector Current 50 mA

VCEO Collector−Emitter Voltage 80 V

VECO Emitter−Collector Voltage 7 V

PDDetector Power Dissipation @ TA = 25°C 150 mW

Derate Above 25°C 1.5 mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

HMHA281, HMHA2801 Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Symbol Parameter Test Conditions Device Min Typ Max Unit

INDIVIDUAL COMPONENT CHARACTERISTICS

Emitter

VFForward Voltage IF = 10 mA All 1.0 −1.3 V

IRReverse Current VR = 5 V All − − 5mA

Detector

BVCEO Breakdown Voltage Collector to Emitter IC = 0.5 mA, IF = 0 All 80 − − V

BVECO Emitter to Collector IE = 100 mA, IF = 0 All 7 − −

ICEO Collector Dark Current VCE = 80 V, IF = 0 All − − 100 nA

CCE Capacitance VCE = 0 V, f = 1 MHz All −10 −pF

TRANSFER CHARACTERISTICS

CTR DC Current Transfer Ratio IF = 5 mA, VCE = 5 V HMHA281 50 −600 %

HMHA2801 80 −600

HMHA2801A 80 −160

HMHA2801B 130 −260

HMHA2801C 200 −400

VCE (SAT) Saturation Voltage IF = 8 mA, IC = 2.4 mA HMHA281 − − 0.4 V

IF = 10 mA, IC = 2 mA HMHA2801,

HMHA2801A,

HMHA2801B,

HMHA2801C

− − 0.3

trRise Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 WAll −3−ms

tfFall Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 WAll −3−

ISOLATION CHARACTERISTICS

VISO Steady State Isolation Voltage 1 Minute All 3750 − − VACRMS

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

HMHA281, HMHA2801 Series

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

0.6 0.8 1.0 1.2 1.4 1.6

100

1 10 100

0.1

100

1 10 100

100

1000

−40 −200 20406080100

−0.5

0.0

0.5

1.0

1.5

2.0

−40 −20 0 20406080100

0.1

100

Figure 1. Forward Current vs. Forward Voltage

, Forward Voltage (V)

TA = 25°C

, Forward Current (mA)

VCE = 10 V

IC, Collector Current (mA)

VCE = 5 V

VCE = 0.4 V

Figure 2. Collector Current vs. Forward Current

, Forward Current (mA)

IC / IF

, Current Transfer Ratio (%)

VCE = 10 V

VCE = 5 V

VCE = 0.4 V

TA = 25°C

Figure 3. Current Transfer Ratio vs. Forward Current

TA, Ambient Temperature (5C)

Normalized CTR (IF) / CTR (5 mA)

IF = 5 mA

Normalized to:

IF = 5 mA

VCE = 5 V

TA = 25°C

IF = 1 mA

IF = 0.5 mA

IF = 10 mA

Figure 4. Normalized CTR vs. Temperature

TA, Ambient Temperature (5C)

IC, Collector Current (mA)

VCE = 5 V

IF = 10 mA

IF = 25 mA

IF = 5 mA

IF = 1 mA

IF = 0.5 mA

Figure 5. Collector Current vs. Temperature

HMHA281, HMHA2801 Series

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

12345678910

0.0 0.2 0.4 0.6 0.8 1.0

20 40 60 80 100 1 10 100

0.01

0.001

0.1

100

1000

−40 −20 0 20406080100

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

0.26

0.28

0.30

VCE, Collector−Emitter Voltage, (V)

IC, Collector Current (mA)

TA = 25°C

IF = 20 mA

IF = 30 mA

IF = 40 mA IF = 50 mA

IF = 1.0 mA

IF = 5.0 mA

IF = 10 mA

Figure 6. Collector Current vs.

Collector−Emiter Voltage

VCE, Collector−Emitter Voltage, (V)

IC, Collector Current (mA)

IF = 20 mA

IF = 30 mA

IF = 40 mA IF = 50 mA

IF = 1.0 mA

IF = 5.0 mA

IF = 10 mA

IF = 2 mA

IF = 0.5 mA

TA, Ambient Temperature (5C)

ICEO, Collector Dark Current (mA)

VCE = 48 V

VCE = 24 V

VCE = 5 V

VCE = 10 V

RL, Load Resistance (kW)

Switching Time (ms)

TA = 25°C

IF = 16 mA

VCC = 5 V tOFF

tON

TA, Ambient Temperature (5C)

VCE(SAT), Collector−Emitter

Saturation Voltage (V)

IF = 5 mA

IC = 1 mA

Figure 7. Collector Current vs.

Collector−Emiter Voltage

Figure 8. Collector Dark Current vs.

Temperature

Figure 9. Switching Time vs. Load Resistance

Figure 10. Collector−Emitter Saturation Voltage

vs Temperature

HMHA281, HMHA2801 Series

www.onsemi.com

REFLOW PROFILE

Figure 11. Reflow Profile

260

240

220

200

180

160

140

120

100

245

Tsmax

Tsmin

120 240 360

Temperature (5C)

Time 25°C to Peak

Max. Ramp−up Rate = 3°C/S

Max. Ramp−down Rate = 6°C/S

Profile Freature Pb−Free Assembly Profile

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 – 120 seconds

Ramp−up Rate (tL to tP) 3°C / second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 – 150 seconds

Peak Body Package Temperature 245°C +0°C / –5°C

Time (tP) within 5°C of 245°C30 seconds

Ramp−down Rate (TP to TL) 6°C / second maximum

Time 25°C to Peak Temperature 8 minutes maximum

ORDERING INFORMATION

Part Number Package Shipping†

HMHA2801 Half Pitch Mini−Flat 4−Pin 100 Units / Tube

HMHA2801R2 Half Pitch Mini−Flat 4−Pin 2500 / Tape & Reel

HMHA2801V Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

HMHA2801R2V Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MFP4 2.5X4.4, 1.27P

CASE 100AL

ISSUE O DATE 31 AUG 201

NOTES:

A) NO STANDARD APPLIES TO THIS PACKAGE

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSION

0.3−0.51

2.31−2.69

4.40 (Typ)

6.30−7.29

PIN ONE

1.95−2.11

0−0.20

1.27+/− .127 0.30−0.89 0.18−0.25

4.83

7.87

1.52

1.27

LAND PATTERN RECOMMENDATION

0.55−0.75

2.39 (Max)

1.19 (Typ)

R0.15 (Typ)

0.61

2\:

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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October, 2002 − Rev. 0 Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON13485G

ON SEMICONDUCTOR STANDARD

MFP4 2.5X4.4, 1.27P

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98AON13485G

PAGE 2 OF 2

ISSUE REVISION DATE

ORELEASED FOR PRODUCTION FROM FAIRCHILD MFP04A TO ON

SEMICONDUCTOR. REQ. BY B. MARQUIS. 31 AUG 2016

August, 2016 − Rev. O Case Outline Number

100AL

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