MICR oT * UALITY SEMICONOUCTOR, INC High Voltage Diode H1153 Designed for High Temperature Operation Low RFI/EMI LTR. INCHES MILLIMETERS A -360 Dia. 9,14 Dia. ; oo 20" (TYP) B .50 Dia. 12,70 Dia. ie A fl METAL CAP (rye) METAL C 37 94 ria Nk 0 1.18 Dia. 29,97 Dia. e + E 7 10.2 H1153 o F 750 19,05 6 I G .050 1,27 an a " H 60 Dia. 15,24 eK q Ek | 40 10,16 c Dimensional Tolerances .X + .1, .XX + .02, .XXX + .005 inch. MAXIMUM RATINGS (At T, = 25C unless otherwise noted) RATING SYMBOL UNITS Repetitive Peak Reverse Voltage See Fig. 1 & 2 Vram 45 KV Average Forward Current (Fig. 1) levy 2.2 mA Peak Surge Current, %e Cycle at 60Hz, (Non-Rep) lesaa 200 mA Maximum Ambient Operating Temperature Ta 90 C These maximum ratings cannot necessarily be used simultaneously; see Fig. 1Safe Operating Areas. ELECTRICAL CHARACTERISTICS (At T, = 25C unless otherwise noted) CHARACTERISTICS SYMBOL UNITS Maximum Reverse Current at Va = 45kV fe 1 pA Maximum Forward Voltage Drop at |; = 5mA Vem 180 v Max. Anode to Cathode Capacitance at Va = 400V, F = 100kHz G 0.75 pF Max. Reverse Recovery Time, Ip = 2mA, I; = 4mA and lan = 1mA (Fig. 3) . . tn ue nsecREPETITIVE PEAK REVERSE VOLTAGE. Varn (kV) 8 & 8 8 = o o SAFE OPERATING AREA AMBIENT TEMPERATURE MEASURED WITHIN 1 OF RECTIFIER Operation in crosshatched regions should be limited J-03-1L 5 to less than 5 minutes. Use Calibrated Laboratory Grade PI Alcohol Thermometer To Measure Air Temp. Approx. 1 Below Rectifier. SAFE OPERATING AREA at T, = 90C (MEASURED WITHIN 1 OF RECTIFIER) = S = ee 0 05 #10 15 20 25 30 35 40 AVERAGE FORWARD CURRENT, I, (mA) FIGURE 1 Typical Applied Voltage - 63.5ys L Vanw = OC OUT + OVERSHOOT Typical Operating Circuit 2500 R FIGURE 2 Recovery Wave Form REVERSE RECOVERY TEST CIRCUIT SOC +2mA/-4mA conpucren t- +2.0mA CERAMIC BOK PULSE GENERATOR Sut ew . Ir be Bus PULSE WIDTH { 10 Khaz REP RATE be 0 tc 400V0 , Out. 2 ~ TIME - { SWITCHING 1,0mA somnz OSCKLOSCOPE In WITH OC 50 TERMINATION REVERSE ~4.0mA -~"" RECOVERY CURRENT