2SD1603, 2SD1604 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline TO-220AB 2 1 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 ID 2.6 k (Typ) 100 (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1603 2SD1604 Unit Collector to base voltage VCBO 60 80 V Collector to emitter voltage VCEO 60 80 V Emitter to base voltage VEBO 7 7 V Collector current IC 8 8 A Collector peak current IC(peak) 12 12 A 40 40 W 1 Collector power dissipation PC* Junction temperature Tj 150 150 C Storage temperature Tstg -55 to +150 -55 to +150 C 8 8 A C to E diode forward current Note: 1. Value at TC = 25C. ID * 1 2SD1603, 2SD1604 Electrical Characteristics (Ta = 25C) 2SD1603 2SD1604 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 60 -- -- 80 -- -- V IC = 25 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 7 -- -- 7 -- -- V IE = 50 mA, IC = 0 Collector cutoff current ICBO -- -- 100 -- -- 100 A VCB = 60 V, IE = 0 ICEO -- -- 10 -- -- 10 A VCB = 50 V, RBE = DC current tarnsfer ratio hFE 1000 -- 20000 1000 -- 20000 Collector to emitter saturation voltage VCE(sat)1 -- -- 1.5 -- -- 1.5 V IC = 4 A, IB = 8 mA* VCE(sat)2 -- -- 3.0 -- -- 3.0 V IC = 8 A, IB = 80 1 mA* VBE(sat)1 -- -- 2.0 -- -- 2.0 V IC = 4 A, IB = 8 mA* VBE(sat)2 -- -- 3.5 -- -- 3.5 V IC = 8 A, IB = 80 1 mA* C to E diode forward voltage VD -- -- 3.0 -- -- 3.0 V ID = 8 A* Turn on ton -- 0.5 -- -- 0.5 -- s IC = 4 A, IB1 = -IB2 = 8 mA Storage time tstg -- 5.0 -- -- 5.0 -- s Fall time tf -- 1.0 -- -- 1.0 -- s Base to emitter saturation voltage Note: 2 1. Pulse test. VCE = 3 V, IC = 4 A* 1 1 1 1 2SD1603, 2SD1604 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 60 40 20 0 50 100 Case temperature TC (C) 150 Area of Safe Operation 100 s 1 s 10 Collector current IC (A) iC (peak) 3 1m s =2 2SD1604 TC 0.3 ms n( 10 tio era = Op PW DC IC (max) 1.0 ) C 5 0.1 Ta = 25C 1 Shot Pulse 2SD1603 0.03 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 3.0 Collector current IC (A) 2.5 8 2.0 1.5 6 1.0 4 0.5 mA 2 Ta = 25C IB = 0 0 1 2 3 4 Collector to emitter voltage VCE (V) 5 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 30,000 10,000 5C 3,000 Ta =7 25 1,000 5 -2 300 VCE = 3 V Pulse 100 30 0.1 0.3 1.0 3 Collector current IC (A) 10 3 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD1603, 2SD1604 Saturation Voltage vs. Collector Current 10 3 500 200 VBE (sat) 1.0 0.3 VCE (sat) 500 lC/lB = 200 0.1 0.03 Ta = 25C 0.01 0.1 0.3 1.0 3 Collector current IC (A) 10 Switching Time vs. Collector Current 10 tstg Switching time t (s) 3 tf 1.0 ton 0.3 Ta = 25C 0.1 0.03 VCC = 30 V IC = 100 IB1 = -100 IB2 0.01 0.1 0.3 1.0 3 Collector current IC (A) 10 Transient Thermal Resistance Thermal resistance j-c (C/W) 10 1 s to 1,000 s 3 1 ms to 1.0 1s 0.3 TC = 25C 0.1 0.03 0.01 1 10 100 1,000 (s) 1 10 100 1,000 (ms) Time t 4 2SD1603, 2SD1604 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5