2SD1603, 2SD1604
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104
Outline
TO-220AB
2.6 kΩ
(Typ) 100 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
123
ID
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1603 2SD1604 Unit
Collector to base voltage VCBO 60 80 V
Collector to emitter voltage VCEO 60 80 V
Emitter to base voltage VEBO 77V
Collector current IC88A
Collector peak current IC(peak) 12 12 A
Collector power dissipation PC*140 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
C to E diode forward current ID*188A
Note: 1. Value at TC = 25°C.
2SD1603, 2SD1604
2
Electrical Characteristics (Ta = 25°C)
2SD1603 2SD1604
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage V(BR)CEO 60 — — 80 — — V IC = 25 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 7—— 7—— VI
E
= 50 mA, IC = 0
Collector cutoff current ICBO — — 100 — — 100 µA VCB = 60 V, IE = 0
ICEO ——10 ——10 µAV
CB = 50 V, RBE = ∞
DC current tarnsfer
ratio hFE 1000 — 20000 1000 — 20000 VCE = 3 V, IC = 4 A*1
Collector to emitter
saturation voltage VCE(sat)1 — — 1.5 — — 1.5 V IC = 4 A, IB = 8 mA*1
VCE(sat)2 — — 3.0 — — 3.0 V IC = 8 A, IB = 80
mA*1
Base to emitter
saturation voltage VBE(sat)1 — — 2.0 — — 2.0 V IC = 4 A, IB = 8 mA*1
VBE(sat)2 — — 3.5 — — 3.5 V IC = 8 A, IB = 80
mA*1
C to E diode forward
voltage VD— — 3.0 — — 3.0 V ID = 8 A*1
Turn on ton — 0.5 — — 0.5 — µs IC = 4 A,
IB1 = –IB2 = 8 mA
Storage time tstg — 5.0 — — 5.0 — µs
Fall time tf— 1.0 — — 1.0 — µs
Note: 1. Pulse test.
2SD1603, 2SD1604
3
0 50 100 150
Case temperature TC (°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
60
40
20
0.03
0.1
0.3
1.0
3
10
Collector to emitter voltage VCE (V)
Collector current IC (A)
3 10 30 100 300
Area of Safe Operation
1 µs
1 ms
PW = 10 ms
DC Operation (T
C
= 25°C)
Ta = 25°C
1 Shot Pulse
iC (peak)
IC (max)
100 µs
2SD1604
2SD1603
Collector to emitter voltage VCE (V)
Collector current IC (A)
0
Typical Output Characteristics
12345
2
4
6
8
10
Ta = 25°C
IB = 0
0.5 mA
1.0
1.5
3.0
2.5
2.0
30
100
1,000
300
10,000
30,000
3,000
Collector current IC (A)
DC current transfer ratio hFE
0.1 0.3 1.0 3 10
DC Current Transfer Ratio
vs. Collector Current
VCE = 3 V
Pulse
T
a
= 75°C
–25
25
2SD1603, 2SD1604
4
0.01
0.03
0.1
0.3
1.0
3
10
Collector current IC (A)
0.1 0.3 1.0 3 10
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
Saturation Voltage vs. Collector Current
VBE (sat)
VCE (sat)
Ta = 25°C
200 500
500 lC/lB = 200
0.01
0.03
0.1
0.3
1.0
3
10
Collector current IC (A)
Switching time t (µs)
0.1 0.3 1.0 3 10
Switching Time vs. Collector Current
tf
ton
tstg
VCC = 30 V
IC = 100 IB1 = –100 IB2
Ta = 25°C
0.01
0.03
0.1
0.3
1.0
3
10
Thermal resistance θj-c (°C/W)
1 1,000 (s)10010
1 1,000 (ms)10010
Transient Thermal Resistance
Time t
TC = 25°C
1 s to 1,000 s
1 ms to 1 s
2SD1603, 2SD1604
5
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examples described herein.
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