© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 6
1Publication Order Number:
2N5457/D
2N5457, 2N5458
JFETs - General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
•N−Channel for Higher Gain
•Drain and Source Interchangeable
•High AC Input Impedance
•High DC Input Resistance
•Low Transfer and Input Capacitance
•Low Cross−Modulation and Intermodulation Distortion
•Plastic Encapsulated Package
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 25 Vdc
Drain−Gate Voltage VDG 25 Vdc
Reverse Gate −Source Voltage VGSR −25 Vdc
Gate Current IG10 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD310
2.82
mW
mW/°C
Operating Junction Temperature TJ135 °C
Storage Temperature Range Tstg −65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
2N5457 TO−92 1000 Units/Box
2N5458 TO−92 1000 Units/Box
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5458G TO−92
(Pb−Free)
1000 Units/Box
2N5457G TO−92
(Pb−Free)
1000 Units/Box
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 5
2N
545x
AYWWG
G
2N545x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
2N5457, 2N5458
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −10 mAdc, VDS = 0)
V(BR)GSS −25 − − Vdc
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
IGSS −
−
−
−
-1.0
−200
nAdc
Gate−Source Cutoff Voltage 2N5457
(VDS = 15 Vdc, iD = 10 nAdc) 2N5458
VGS(off) −0.5
−1.0
−
−
−6.0
−7.0
Vdc
Gate−Source Voltage
(VDS = 15 Vdc, iD = 100 mAdc) 2N5457
(VDS = 15 Vdc, iD = 200 mAdc) 2N5458
VGS −
−
−2.5
−3.5
−
−
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1) 2N5457
(VDS = 15 Vdc, VGS = 0) 2N5458
IDSS 1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1) 2N5457
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458
|Yfs| 1000
1500
3000
4000
5000
5500
mmhos
Output Admittance Common Source (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
|Yos|
−10 50 mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Ciss −4.5 7.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Crss −1.5 3.0 pF
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
2N5457, 2N5458
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3
Figure 1. Noise Figure versus Source Resistance
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer Characteristics
1.0
0.4
0.2
0
-1.2
0.8
0.6
0 5 10 15 20 25
0
0.6
0.4
0.2
0.8
1.2
1.0
-0.8 -0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
VGS(off) ^ -1.2 V
VGS(off) ^ -1.2 V
RS, SOURCE RESISTANCE (Megohms)
14
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0 10
VDS = 15 V
VGS = 0
f = 1 kHz
TYPICAL CHARACTERISTICS
For 2N5457 Only
2N5457, 2N5458
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4
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
VGS, GATE - SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
0
0
4
3
2
1
0
10
4
2
0
-4
5
510152025
5
4
3
2
1
0
-7
8
6
-6 -5 -4 -3 -2 -1
-5 -3 -2 -1 0
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS(off) ^ -5.8 V
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I, DRAIN CURRENT (mA)
D
I
VDS = 15 V
10
4
2
0
8
6
0 5 10 15 20 25
VGS(off) ^ -5.8 V
VGS = 0 V
VGS = 0 V
-2 V
-1 V
-3 V
-1 V
-2 V
-3 V
-4 V
-5 V
VGS(off) ^ -3.5 V
VGS(off) ^ -3.5 V
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
TYPICAL CHARACTERISTICS
For 2N5457 Only
2N5457, 2N5458
http://onsemi.com
5
PACKAGE DIMENSIONS
TYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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2N5457/D
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