LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v03.0908
General Description
Features
Functional Diagram
The HMC499 is a high dynamic range GaAs PHEMT
MMIC Medium Power Ampli er which operates
between 21 and 32 GHz. The HMC499 provides
16 dB of gain, and an output power of +24 dBm at
1 dB compression from a +5V supply voltage. The
HMC499 ampli er can easily be integrated into Multi-
Chip-Modules (MCMs) due to its small size. All data
is with the chip in a 50 Ohm test xture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Output IP3: +33 dBm
P1dB: +24 dBm
Gain: 16 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.04 x 1.09 x 0.1 mm
Electrical Speci cations, TA = +25° C, Vdd = 5V, Idd = 200 mA*
Typical Applications
The HMC499 is ideal for use as a power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 21.0 - 24.0 24.0 - 28.0 28.0 - 32.0 GHz
Gain 13 16 12.5 15.5 12 15 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 10 5 8 dB
Output Return Loss 13 12 12 dB
Output Power for 1 dB Compression (P1dB) 20 23 20 24 21 24.5 dBm
Saturated Output Power (Psat) 24 24.5 25 dBm
Output Third Order Intercept (IP3) 30 33 33.5 dBm
Noise Figure 6.5 5.0 4.5 dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 200 200 mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 57
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Output P1dB vs. Temperature Psat vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
18 20 22 24 26 28 30 32 34 36
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
14
18
22
26
30
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
HMC499
v03.0908 GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 22 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain & Power vs.
Supply Voltage@ 30 GHz, Idd= 200 mA Reverse Isolation vs. Temperature
Power Compression @ 30 GHz
0
4
8
12
16
20
24
28
-10-8-6-4-202468101214
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
-10 -8 -6 -4 -2 0 2 4 6 8 10 12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
14
18
22
26
3 3.5 4 4.5 5 5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd (V)
0
2
4
6
8
10
12
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
20
24
28
32
36
40
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
IP3 (dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
HMC499
v03.0908 GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 59
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc
Gate Bias Voltage (Vgg) -4 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 16.7 mW/°C above 85 °C) 1.50 W
Thermal Resistance
(channel to die bottom) 60 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (Vdc) Idd (mA)
+4.5 193
+5.0 200
+5.5 207
+3.0 191
+3.5 200
+4.0 208
Typical Supply Current vs. Vdd
Note: Ampli er will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 200 mA at +5V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC499
v03.0908 GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms
2-4 Vdd1, 2, 3 Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF and 0.01 μF are required.
5RFOUT This pad is AC coupled
and matched to 50 Ohms.
6Vgg
Gate control for ampli er. Adjust to achieve Idd of 200 mA.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of 100 pF
and 0.01 μF are required.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Assembly Diagram
HMC499
v03.0908 GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 61
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC499
v03.0908 GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
