BZX84-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features * These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series. * The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is 5 %. Replace "C" with "B" for 2 % tolerance. * Silicon Planar Power Zener Diodes 3 1 2 18078 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Power dissipation 1) Symbol Ptot Value Unit 1) mW 300 Device on fiberglass substrate, see layout. Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol RthJA Value 420 1) Unit C/W Junction temperature Tj 150 C Storage temperature range TS - 65 to + 150 C 1) Device on fiberglass substrate, see layout. Document Number 85763 Rev. 1.5, 19-Apr-04 www.vishay.com 1 BZX84-Series VISHAY Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 Dynamic Resistance rzj @ IZT1 Temp. Coefficient of Zener Voltage Test Current IZT1 VZ @ IZT1 IZT2 IR @ VR mA -4 mA A V 10 /C Reverse Leakage Current min max min max BZX84C2V4 Z11 2.2 2.6 70 (100) 275 5 -9.0 -4.0 1 50 1 BZX84C2V7 Z12 2.5 2.9 75 (100) 300 (600) 5 -9.0 -4.0 1 20 1 BZX84C3 Z13 2.8 3.2 80 (95) 325 (600) 5 -9.0 -3.0 1 10 1 BZX84C3V3 Z14 3.1 3.5 85 (95) 350 (600) 5 -8.0 -3.0 1 5 1 BZX84C3V6 Z15 3.4 3.8 85 (90) 375 (600) 5 -8.0 -3.0 1 5 1 BZX84C3V9 Z16 3.7 4.1 85 (90) 400 (600) 5 -7.0 -3.0 1 3 1 BZX84C4V3 Z17 4 4.6 80 (90) 410 (600) 5 -6.0 -1.0 1 3 1 BZX84C4V7 Z1 4.4 5 50 (80) 425 (500) 5 -5.0 +2.0 1 3 2 BZX84C5V1 Z2 4.8 5.4 40 (60) 400 (480) 5 -3.0 +4.0 1 2 2 BZX84C5V6 Z3 5.2 6 15 (40) 80 (400) 5 -2.0 +6.0 1 1 2 BZX84C6V2 Z4 5.8 6.6 6.0 (10) 40 (150) 5 -1.0 +7.0 1 3 4 BZX84C6V8 Z5 6.4 7.2 6.0 (15) 30 (80) 5 +2.0 +7.0 1 2 4 BZX84C7V5 Z6 7 7.9 6.0 (15) 30 (80) 5 +3.0 +7.0 1 1 5 BZX84C8V2 Z7 7.7 8.7 6.0 (15) 40 (80) 5 +4.0 +7.0 1 0.7 5 BZX84C9V1 Z8 8.5 9.6 6.0 (15) 40 (100) 5 +5.0 +8.0 1 0.5 6 BZX84C10 Z9 9.4 10.6 8.0 (20) 50 (150) 5 +5.0 +8.0 1 0.2 7 BZX84C11 Y1 10.4 11.6 10 (20) 50 (150) 5 +5.0 +9.0 1 0.1 8 BZX84C12 Y2 11.4 12.7 10 (25) 50 (150) 5 +6.0 +9.0 1 0.1 8 BZX84C13 Y3 12.4 14.1 10 (30) 50 (170) 5 +7.0 +9.0 1 0.1 8 BZX84C15 Y4 13.8 15.6 10 (30) 50 (200) 5 +7.0 +9.0 1 0.05 0.7 VZnom. BZX84C16 Y5 15.3 17.1 10 (40) 50 (200) 5 +8.0 +9.5 1 0.05 0.7 VZnom. BZX84C18 Y6 16.8 19.1 10 (45) 50 (225) 5 +8.0 +9.5 1 0.05 0.7 VZnom. BZX84C20 Y7 18.8 21.2 15 (55) 60 (225) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C22 Y8 20.8 23.3 20 (55) 60 (250) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C24 Y9 22.8 25.6 25 (70) 60 (250) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C27 Y10 25.1 28.9 25 (80) 65 (300) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C30 Y11 28 32 30 (80) 70 (300) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C33 Y12 31 35 35 (80) 75 (325) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C36 Y13 34 38 35 (90) 80 (350) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C39 Y14 37 41 40 (130) 80 (350) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C43 Y15 40 46 45 (150) 85 (375) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C47 Y16 44 50 50 (170) 85 (375) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C51 Y17 48 54 60 (180) 85 (400) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C56 Y18 52 60 70 (200) 100 (425) 2 +9.0 +11 0.5 0.05 0.7 VZnom. BZX84C62 Y19 58 66 80 (215) 100 (450) 2 +9.0 +12 0.5 0.05 0.7 VZnom. BZX84C68 Y20 64 72 90 (240) 150 (475) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C75 Y21 70 79 95 (255) 170 (500) 2 +10 +12 0.5 0.05 0.7 VZnom. www.vishay.com 2 rzj @ IZT2 V Test Current Document Number 85763 Rev. 1.5, 19-Apr-04 BZX84-Series VISHAY Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 Dynamic Resistance rzj @ IZT1 rzj @ IZT2 V Test Current Temp. Coefficient of Zener Voltage Test Current IZT1 VZ @ IZT1 IZT2 IR @ VR mA -4 mA A V 10 /C Reverse Leakage Current min max min max BZX84B2V4 Z50 2.35 2.45 70 (100) 275 5 -9 -4 1 50 1 BZX84B2V7 Z51 2.65 2.75 75 (100) 300 (600) 5 -9 -4 1 20 1 BZX84B3 Z52 2.94 3.06 80 (95) 325 (600) 5 -9 -3 1 10 1 BZX84B3V3 Z53 3.23 3.37 85 (95) 350 (600) 5 -8 -3 1 5 1 BZX84B3V6 Z54 3.53 3.67 85 (90) 375 (600) 5 -8 -3 1 5 1 BZX84B3V9 Z55 3.82 3.98 85 (90) 400 (600) 5 -7 -3 1 3 1 BZX84B4V3 Z56 4.21 4.39 80 (90) 410 (600) 5 -6 -1 1 3 1 BZX84B4V7 Z57 4.61 4.79 50 (80) 425 (500) 5 -5 2 1 3 2 BZX84B5V1 Z58 5 5.2 40 (60) 400 (480) 5 -3 4 1 2 2 BZX84B5V6 Z59 5.49 5.71 15 (40) 80 (400) 5 -2 6 1 1 2 BZX84B6V2 Z60 6.08 6.32 6.0 (10) 40 (150) 5 -1 7 1 3 4 BZX84B6V8 Z61 6.66 6.94 6.0 (15) 30 (80) 5 2 7 1 2 4 BZX84B7V5 Z62 7.35 7.65 6.0 (15) 30 (80) 5 3 7 1 1 5 BZX84B8V2 Z63 8.04 8.36 6.0 (15) 40 (80) 5 4 7 1 0.7 5 BZX84B9V1 Z64 8.92 9.28 6.0 (15) 40 (100) 5 5 8 1 0.5 6 BZX84B10 Z65 9.8 10.2 8.0 (20) 50 (150) 5 5 8 1 0.2 7 BZX84B11 Z66 10.8 11.2 10 (20) 50 (150) 5 5 9 1 0.1 8 BZX84B12 Z67 11.8 12.2 10 (25) 50 (150) 5 6 9 1 0.1 8 BZX84B13 Z68 12.7 13.3 10 (30) 50 (170) 5 7 9 1 0.1 8 BZX84B15 Z69 14.7 15.3 10 (30) 50 (200) 5 7 9 1 0.05 0.7 VZnom. BZX84B16 Z70 15.7 16.3 10 (40) 50 (200) 5 8 9.5 1 0.05 0.7 VZnom. BZX84B18 Z71 17.6 18.4 10 (45) 50 (225) 5 8 9.5 1 0.05 0.7 VZnom. BZX84B20 Z72 19.6 20.4 15 (55) 60 (225) 5 8 10 1 0.05 0.7 VZnom. BZX84B22 Z73 21.6 22.4 20 (55) 60 (250) 5 8 10 1 0.05 0.7 VZnom. BZX84B24 Z74 23.5 24.5 25 (70) 60 (250) 5 8 10 1 0.05 0.7 VZnom. BZX84B27 Z75 26.5 27.5 25 (80) 65 (300) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B30 Z76 29.4 30.6 30 (80) 70 (300) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B33 Z77 32.3 33.7 35 (80) 75 (325) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B36 Z78 35.3 36.7 35 (90) 80 (350) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B39 Z79 38.2 39.8 40 (130) 80 (350) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B43 Z80 42.1 43.9 45 (150) 85 (375) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B47 Z81 46.1 47.9 50 (170) 85 (375) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B51 Z82 50 52 60 (180) 85 (400) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B56 Z83 54.9 57.1 70 (200) 100 (425) 2 9 11 0.5 0.05 0.7 VZnom. BZX84B62 Z84 60.8 63.2 80 (215) 100 (450) 2 9 12 0.5 0.05 0.7 VZnom. BZX84B68 Z85 66.6 69.4 90 (240) 150 (475) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B75 Z86 73.5 76.5 95 (255) 170 (500) 2 10 12 0.5 0.05 0.7 VZnom. Document Number 85763 Rev. 1.5, 19-Apr-04 www.vishay.com 3 BZX84-Series VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 18114 Fig. 1 Forward characteristics 18115 Fig. 2 Admissible Power Dissipation vs. Ambient Temperature 18117 Fig. 4 Dynamic Resistance vs. Zener Current 18118 Fig. 5 Capacitance vs. Zener Voltage C 18116 Fig. 3 Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 4 18119 Fig. 6 Dynamic Resistance vs. Zener Current Document Number 85763 Rev. 1.5, 19-Apr-04 BZX84-Series VISHAY Vishay Semiconductors C 18120 Fig. 7 Dynamic Resistance vs. Zener Current , = 18135 Fig. 10 Temperature Dependence of Zener Voltage vs. Zener Voltage C/W 18121 Fig. 8 Thermal Differential Resistance vs. Zener Voltage 18124 Fig. 11 Change of Zener Voltage vs. Junction Temperature C 18122 Fig. 9 Dynamic Resistance vs. Zener Voltage Document Number 85763 Rev. 1.5, 19-Apr-04 18136 Fig. 12 Temperature Dependence of Zener Voltage vs. Zener Voltage www.vishay.com 5 BZX84-Series VISHAY Vishay Semiconductors 18126 Fig. 13 Change of Zener Voltage vs. Junction Temperature 18137 Fig. 14 Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage 18138 Fig. 15 Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85763 Rev. 1.5, 19-Apr-04 VISHAY BZX84-Series Vishay Semiconductors 18111 Fig. 16 Breakdown Characteristics 18112 Fig. 17 Breakdown Characteristics Document Number 85763 Rev. 1.5, 19-Apr-04 www.vishay.com 7 BZX84-Series VISHAY Vishay Semiconductors 18113 Fig. 18 Breakdown Characteristics Layout for RTheta;JA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) www.vishay.com 8 17451 Document Number 85763 Rev. 1.5, 19-Apr-04 BZX84-Series VISHAY Vishay Semiconductors 0.175 (.007) 0.125 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.4 (.094) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.8 (0.031) 0.4 (.016) 3 1 0.95 (.037) 1.33 (.052) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85763 Rev. 1.5, 19-Apr-04 www.vishay.com 9 BZX84-Series VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 85763 Rev. 1.5, 19-Apr-04