GaAs SPDT Absorptive Switch with
ASIC Driver, DC - 3.0 GHz
SW65-0114
SOW-24
V 5.00
Electrical Specifications: TA = 25°C
Features
nTypical Isolation: 36 dB (2,000 MHz)
nTypical Insertion Loss: 1.8 dB (2,000 MHz)
nIntegral ASIC TTL/CMOS Driver
nPlastic, 50 mil Pitch, SOW-24 Lead, Wide Body
nLow DC Power Consumption
n50 Ohm Nominal Impedance
nTape and Reel Packaging Available
nTest Boards Available
Description
M/A-COM's SW65-0114 is a GaAs MMIC absorptive
SPDT switch with an integral silicon ASIC driver. This
device is in a 24-lead plastic package. This switch offers
excellent broadband performance and repeatability from DC
to 3 GHz, while maintaining low DC power dissipation.
The SW65-0114 is ideally suited for wireless infrastructure
applications. Also available in ceramic package with
improved performance.
Package outline conforms to JEDEC standard MS-013AD.
Parameter Test Conditions Units Min Typical Max
Insertion Loss DC - 3.0 GHz dB — 1.8 2.2
Isolation
(All arms off) DC - 3.0 GHz dB 33 36 —
VSWR
DC - 3.0 GHz
—
— On Off
1.7:1 2.1:1
2.2:1
Trise Tfall
Ton Toff
Transients
10%/90%, 90%/10% 1
50% TTL to 90%/10% RF
In-band (peak to peak)
nS
nS
mV
—-
—
—
15
50
50
50
150
150
1 dB Compression .05 GHz
.5 - 3.0 GHz dBm
dBm —
— +20
+27 —
—
Input IP3 Two tone inputs 0.05 GHz
up to +5 dBm 0.5 - 3.0 GHz dBm
dBm —
— +35
+46 —
—
VCC — V +4.5 +5.0 +5.5
VEE — V -8.0 -5.0 -4.75
ICC VCC = +5.0V mA — — 4
IEE VEE = -5.0V mA — — -1
Logic “0” Iin = 20µA max V 0.0 — 0.8
Logic “1” Iin = 20µA max V 2.0 — 5.0
1. Decoupling capacitors (.01 µF) are required on the power supply lines.
GaAs SPDT Absorptive Switch with ASIC Driver, DC - 3.0 GHz SW65-0114
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 5.00
2
Absolute Maximum Ratings 2,3 Pin Configuration
Parameter Absolute Maximum
Max. Input Power
0.05 GHz
0.5 - 3.0 GHz
+27 dBm
+34 dBm
Bias Voltages
VEE
VCC
Control Voltage 4
-8.5V
+5.5V
-0.5V to VCC +0.5V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +125°C
2. Operation of this device above any one of these parameters
may cause permanent damage.
3. When the RF input is applied to the terminated port, the
absolute maximum power is +30 dBm.
4. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.
Pin # Function Pin # Function
1 RFC 13 C1
2 GND 14 GND
3 GND 15 GND
4 GND 16 GND
5 GND 17 GND
6 RF2 18 GND
7 GND 19 RF1
8 VEE 20 GND
9 GND 21 GND
10 VCC 22 GND
11 GND 23 GND
12 C2 24 GND
Truth Table
TTL Control Input
C1 C2 RF1 RF2
1 0 On Off
0 1 Off On
RF Common To:
Part Number Package
SW65-0114 Bulk Packaging
SW65-0114TR Tape and Reel (1K Reel)
SW65-0114-TB Units Mounted on Test Board
Ordering Information
