UPGA301Ae3 Nanosecond SCR Switch Compliant DESCRIPTION The UPGA301Ae3 is designed for high current narrow-pulse switching applications where size and current handling capability are critical. These devices may be triggered on using low power logic drivers from (+0.8 V at 200 A). Epoxy packaged, oxide passivated planar SCR chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond connection allows high current surge capability for narrow pulse applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * Low thermal resistance package for higher current operation High speed switching capability Efficient heat path with Integral locking bottom metal tab Full metallic bottom eliminates flux entrapment Compatible with automatic insertion equipment Low profile-maximum height of 1mm RoHS compliant Powermite 3 Package APPLICATIONS / BENEFITS * * * * * * Reference Microsemi MicroNote 601 and 602 Nanosecond SCR switch for reliable high current pulse generators, modulators and photo-flash quenching Logic drive capability (0.8 V, 200 A) Ideal for laser range finder and camera applications Ideal for automotive collision avoidance applications 2 Small 8.45 mm foot print (See mounting pad details) MAXIMUM RATINGS @ 25 C unless otherwise specified Parameters/Test Conditions Storage Temperature Junction Temperature Thermal Resistance Junction-to-Case (1) Thermal Resistance Junction-to-Ambient Repetitive Peak Off-State Voltage Peak On-State Current for 50 ns (max) Peak Gate Current Reverse Gate Voltage Solder Temperature @ 10 s Symbol Value Unit TSTG TJ RJC RJA VDRM ITSM IGM VGR TSP -50 to +150 0 to +125 4.0 65 100 100 250 5 260 C C C/W C/W V A mA V o C Notes: 1. When mounted on 0.06" thick FR-4PC board using 2 oz copper with recommended minimum foot print RF01142, Rev. A (12/20/13) MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com (c)2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com Page 1 of 5 UPGA301Ae3 MECHANICAL and PACKAGING * * * * * * * CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026. (Consult factor for tin-lead plating.) MARKING: 301A* (dot indicates "e3" designation) POLARITY: Cathode designated by TAB 2 TAPE & REEL option: 16 mm tape per standard EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 0.072 gram See Package Dimensions on last page. PART NOMENCLATURE UP GA301A e3 Powermite RoHS Compliant SCR Part Number SYMBOLS & DEFINITIONS Definition Symbol IG IR IT VD VRRM VDRM Gate Current: The direct current into the gate terminal. Reverse Current: The anode current for a negative anode voltage. On-State Current: The anode, principal or thyristor current when the thyristor is in the on state. Off-State Voltage: The anode, principal, or thyristor voltage when the thyristor is in the off state. Reverse Voltage, Repetitive Peak: The peak reverse voltage including all repetitive transient voltages but excluding all nonrepetitive transient voltages. Repetitive Peak Off-State Voltage: The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages. RF01142, Rev. A (12/20/13) (c)2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com Page 2 of 5 UPGA301Ae3 ELECTRICAL CHARACTERISTICS @ TA = +25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Units 1.1 0.5 10 0.01 3.0 1 1.0 1.5 0.75 200 0.1 5.0 10 A V V A mA mA mA 20 30 ns 15 25 ns 0.3 0.5 s 20 50 ns On characteristics (up to 100 A w/ 100 ns pulse @ Duty Cycle = 0.0001% or less) Forward Blocking Current On - State Voltage Gate Trigger Voltage Gate Trigger Current Reverse Gate Current Holding Current Reverse Current (Note 1) IDRM VT VGT IGT IGR IH IRRM VDRM = 100 V, RGK = 1 k IT = 1 A, Ig =10 mA VD = 5 V, RGS = 100 VD = 5 V, RGS = 10 k VGR = 5 V VD = 5 V, RGK = 1 k VRRM = 30 V, RGK = 1 k 1.0 Switching characteristics (Tc = 25 C) Delay Time Rise Time td tr Circuit Commutated Turn--off Time Gate Trigger--on Pulse Width Critical Rate of Rise Off -State Voltage tq tpg(on) dv/dt Ig = 20 mA, IT = 1 A VD = 60 V, IT =1 A, Ig =10 mA dc < 1% IT = 1.0 A , IR = 1.0 A max, RGK = 1 k Ig = 10 mA, IT = 1 A VD = 30 V, RGK = 1 k 15 30 V/s Note 1: Pulse Test intended to guarantee reverse anode voltage capability for pulse commutation. The device should not be operated in the reverse blocking mode on a continuous basis. RF01142, Rev. A (12/20/13) (c)2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com Page 3 of 5 UPGA301Ae3 ITSM - Non-Repetitive Peak On-State Current (A) GRAPHS tP - Pulse Time (s) tr - Typical Rise Time (s) FIGURE 1 Surge Rating IT - Anode Current (A) FIGURE 2 Switching Speed vs. Current RF01142, Rev. A (12/20/13) (c)2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com Page 4 of 5 UPGA301Ae3 PACKAGE DIMENSIONS DIM A B C D E F G H J K L M T1 T2 Base INCH MILLIMETERS MIN MAX MIN MAX 0.068 0.072 1.73 1.83 0.172 0.174 4.37 4.43 0.197 0.204 5.01 5.17 0.035 NOM 0.889 NOM 0.159 0.161 4.03 4.09 0.072 NOM 1.83 NOM 0.056 NOM 1.422 NOM 0.043 0.045 1.10 1.14 0.252 0.260 6.40 6.61 0.007 NOM 0.178 NOM 0.028 0.030 0.71 0.77 0.014 0.018 0.36 0.46 Gate (Tab 1) Cathode (Tab 2) Anode PAD LAYOUT DIM A B C D E F INCH NOMINAL 0.190 0.210 0.038 0.034 0.030 0.030 MILLIMETERS NOMINAL 4.826 5.344 0.965 0.864 0.762 0.762 SCHEMATIC RF01142, Rev. A (12/20/13) (c)2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com Page 5 of 5