RF01142, Rev. A (12/20/13) ©2013 Microsemi Corporation Page 1 of 5
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UPGA301Ae3
Compliant
Nanosecond SCR Switch
DESCRIPTION
The UPGA301Ae3 is designed for high current narrow-pulse switching applications where size
and current handling capability are critical. These devic es ma y be triggered on using lo w
power logic drivers from (+0.8 V at 200 μA). Epoxy packaged, oxide passivated planar SCR
chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond
connection allows high current surge capability for narrow pulse applications.
Powermite 3
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Low thermal resistance pack a ge for higher curren t oper ati on
• High speed switching capability
• Efficient heat path with Integral locking bottom metal tab
• Full metallic bottom eliminates flux entrapment
• Compatible with automatic insertion equipment
• Low profile-max imum height of 1mm
• RoHS compliant
APPLICATIONS / BENEFITS
• Reference Microsemi MicroNote 601 and 602
• Nanosecond SCR switch for reliable high current pulse generators, modulators and photo-flash
quenching
• Logic drive capability (0.8 V, 200 μA)
• Ideal for laser range finder and camera applications
• Ideal for automotive collision avoidance applications
• Small 8.45 mm2 foot pr int (See mounting pad details)
MAXIMUM RATINGS @ 25 ºC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Storage Temperature
TSTG
-50 to +150
ºC
Junction Temperature
TJ
0 to +125
ºC
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
4.0
ºC/W
Thermal Resi stan ce Jun cti on-to-Ambient (1)
RӨJA
65
ºC/W
Repetitive Peak Off-State Voltage
VDRM
100
V
Peak On-State Current for 50 ns (max)
ITSM
100
A
Peak Gate Current
IGM
250
mA
Reverse Gate Voltage
VGR
5
V
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. When mounted on 0.06 ” thick FR-4PC board using 2 oz copper with recommended minimum foot print
RF01142, Rev. A (12/20/13) ©2013 Microsemi Corporation Page 2 of 5
One Enterprise, Alis o Viej o, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com
UPGA301Ae3
• CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0
• TERMINALS: Annealed matte -tin plating over copper and readily solderable per MIL-STD-750, method 2026. (Consult factor for
tin-lead plating.)
• MARKING: 301A• (dot indicates “e3” designation)
• POLARITY: Cathode designated by TAB 2
• TAPE & REEL option: 16 m m tape per standard EIA-481-B. Consult factory for quantities.
• WEIGHT: Approximately 0.072 gram
• See Package Dimensions on last page.
UP GA301A e3
Powermite
SCR Part Number
RoHS Compli ant
SYMBOLS & DEFINITIONS
Symbol
Definition
IG
Gate Current: The direct current into the gate terminal.
IR
Reverse Current: The anod e cur ren t for a ne gativ e ano de voltag e.
IT
On-State Current: The anode, principal or thyristor current when the thyristor is in the on state.
VD
Off-State Voltage: The anode, principal, or thyristor voltage when the thyristor is in the off state.
VRRM
Reverse Voltage, Repetitive Peak: The peak reverse voltage including all repetitive transient voltages but excluding all
nonrepetitive transient voltages.
VDRM
Repetitive Peak Off-State Voltage: The high est instan tane ous value of the off-state voltage, including all repetitive
transient voltages but excluding all nonrepetitive transient voltages.
RF01142, Rev. A (12/20/13) ©2013 Microsemi Corporation Page 3 of 5
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UPGA301Ae3
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
On characteristics (up to 100 A w/ 100 ns pulse @ Duty Cycle = 0.0001% or less)
Forward Blocking Current
IDRM
VDRM = 100 V, RGK = 1 kΩ
1.0
μ
A
On - State Voltage
V
T
IT = 1 A, Ig =10 mA
1.1
1.5
V
Gate Trigger Voltage
VGT
VD = 5 V, RGS = 100 Ω
0.5
0.75
V
Gate Trigger Current
I
GT
VD = 5 V, RGS = 10 kΩ
10
200
μ
A
Reverse Gate Current
IGR
VGR = 5 V
0.01
0.1
m
A
Holding Current
IH
VD = 5 V, RGK = 1 kΩ
1.0
3.0
5.0
m
A
Reverse Current (Note 1)
IRRM
VRRM = 30 V, RGK = 1 kΩ
1
10
m
A
Switching characteristics (Tc = 25 °C)
Delay Time
td
Ig = 20 mA, IT = 1 A
20
30
ns
Rise Time
tr
V
D
= 60 V, I
T
=1 A, Ig =10 mA
dc < 1%
15
25
ns
Circuit Commutated Turn—off
Time
tq
I
T
= 1.0 A , I
R
= 1.0 A max,
RGK = 1 kΩ
0.3
0.5
μ
s
Gate Trigger—on Pulse Width
tpg(on)
Ig = 10 mA, I
T
= 1 A
20
50
ns
Critical Rate of Rise
Off –State Voltage
dv/dt
VD = 30 V, RGK = 1 kΩ
15
30
V/
μ
s
Note 1: Pulse Test intended to guarantee reverse anode voltage capability for pulse commutation. T he device should not be
operated in the reverse blocking mode on a continuous basis.
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UPGA301Ae3
tP – Pulse Time (µs)
FIGURE 1
Surge Rating
IT – Anode Current (A)
FIGURE 2
Switching Speed vs. Current
I
TSM
– Non-Rep eti tive Pe ak
On-State Current (A)
t
r
– Typical Rise Time (µs)
RF01142, Rev. A (12/20/13) ©2013 Microsemi Corporation Page 5 of 5
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UPGA301Ae3
INCH
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.068
0.072
1.73
1.83
B
0.172
0.174
4.37
4.43
C
0.197
0.204
5.01
5.17
D
0.035 NOM
0.889 NOM
E
0.159
0.161
4.03
4.09
F
0.072 NOM
1.83 NOM
G
0.056 NOM
1.422 NOM
H
0.043
0.045
1.10
1.14
J
0.252
0.260
6.40
6.61
K
0.007 NOM
0.178 NOM
L
0.028
0.030
0.71
0.77
M
0.014
0.018
0.36
0.46
T1
Gate (Tab 1)
T2
Cathode (Tab 2)
Base
Anode
INCH
MILLIMETERS
DIM
NOMINAL
NOMINAL
A
0.190
4.826
B
0.210
5.344
C
0.038
0.965
D
0.034
0.864
E
0.030
0.762
F
0.030
0.762