STP20NE06L
STP20NE06LFP
N - CHANNEL 60V - 0.06 Ω- 20A TO-220/TO-220FP
STripFETPOWER MOSFET
■TYPICALRDS(on) = 0.06 Ω
■EXCEPTIONALdv/dtCAPABILITY
■100%AVALANCHE TESTED
■LOW GATE CHARGE 100 oC
■APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
APPLICATIONS
■DC MOTORCONTROL
■DC-DC& DC-AC CONVERTERS
■SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP20NE06 STP20NE06FP
VDS Drain-source Voltage (VGS =0) 60 V
V
DGR Drain- gate Voltage (RGS =20kΩ)60V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C2013A
I
D
Drain Current (continuous) at Tc= 100 oC149A
I
DM(•) Drain Current (pulsed) 80 80 A
Ptot Total Dissipation at Tc=25o
C7030W
Derating Factor 0.47 0.2 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulse width limited by safe operatingarea (1)I
SD ≤20 A, di/dt ≤300A/µs, VDD ≤V(BR)DSS,T
j≤T
JMAX
TYPE VDSS RDS(on) ID
STP20NE06L
STP20NE06LFP 60 V
60 V <0.07Ω
<0.07Ω20 A
13 A
April 1999
TO-220 TO-220FP
123
123
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THERMAL DATA
TO-220 TO-220FP
Rthj-case
Thermal Resistance Junction-case Max 2.14 5 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 20 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =35V) 100 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µ
AV
GS =0 60 V
I
DSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRating T
c= 125 oC1
10 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±
20 V ±100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID= 250 µA 1 V
RDS(on) Static Drain-source On
Resistance VGS =5V I
D=10A
V
GS =10V I
D=10A 0.07
0.06 0.085
0.07 Ω
Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 20 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=10 A 5 9 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 800
125
40
pF
pF
pF
STP20NE06L/FP
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD =30V I
D=10A
R
G=4.7 W VGS =5V
(see test circuit, figure 3)
20
45 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48V I
D=20A V
GS =5V 14
8
4
20 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =48V I
D=20A
R
G=4.7 Ω VGS =5V
(see test circuit, figure 5)
10
25
42
ns
ns
ns
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
20
80 A
A
VSD (∗)ForwardOnVoltage I
SD =20A V
GS =0 1.5 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 20 A di/dt = 100 A/µs
VDD =30V T
j= 150 oC
(see test circuit, figure 5)
65
130
4
ns
nC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
STP20NE06L/FP
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Thermal Impedancefor TO-220
OutputCharacteristics
Transconductance
Thermal ImpedanceforTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP20NE06L/FP
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Gate Chargevs Gate-sourceVoltage
Normalized Gate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
CapacitanceVariations
Normalized On Resistancevs Temperature
STP20NE06L/FP
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Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2: UnclampedInductiveWaveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
STP20NE06L/FP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP20NE06L/FP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP20NE06L/FP
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
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STP20NE06L/FP
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