BZX55C56 - Formosa Microsemi co., LTD

Page 1

Formosa MS

Zener Diode

Document ID Issued Date Revised Date Revision Page.

DS-222713 2008/02/10 2010/03/10 B 8

1

2

3

4~5

6

7

8

List

List.................................................................................................

Package outline...............................................................................

Features..........................................................................................

Maximum ratings ..............................................................................

Electrical characteristics...................................................................

Rating and characteristic curves........................................................

Pinning information...........................................................................

Taping & bulk specifications for AXIAL devices....................................

Suggested thermal profiles for soldering processes.............................

High reliability test capabilities...........................................................

Mechanical data...............................................................................

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

BZX55C2V4 THRU BZX55C100

Mechanical data

Case : Glass, DO-35G

• Terminals :Plated terminals, solderable per MIL-STD-750,

Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.125 gram

•

Package outline

Page 2

Http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

500mW Zener

Diodes - 2.4V-100V

Axial Lead

PARAMETER CONDITIONS Symbol

VF

PD

MIN. TYP. MAX.

1.50

500

UNIT

V

mW

Storage temperature range

Operating junction temperature range

TSTG

TJ-55

-65

+150

+175 oC

oC

o

Maximum ratings (at T =25 C unless otherwise noted)

A

Forward voltage

Power Dissipation

I = 200 mA

F

Dimensions in inches and (millimeters)

DO-35G

1.02 (26.0)

MIN.

1.02 (26.0)

MIN.

0.166 (4.2)

MAX.

0.022 (0.56)

0.018 (0.45)

0.087 (2.2)

MAX. DIA.

DIA.

Features

Silicon epitaxial planar chip structure.

• Glass hermetically sealed package.

Wide zener reverse voltage range 2.4V to 100V.

Small package size for high density applications.

Ideally suited for automated assembly processes.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

•

V Tolerance Selection of ±5%

Z

Formosa MS

Document ID Issued Date Revised Date Revision Page.

Zener Diode

BZX55C2V4 THRU BZX55C100

DS-222713 2008/02/10 2010/03/10 B 8

I=4mm TL≤25℃

Page 3

o

Electrical characteristics (at T =25 C unless otherwise noted)

A

Marking

code

Test

current

Zener

impedance

Leakage

current

mA

IZT Z @ I

ZT ZT IZK IR

Volts

VR

Z @ I

ZK ZK

3.3

2.4

3.6

3.9

4.3

2.7

4.7

3.0

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

Part No.

BZX55C4V3

BZX55C2V4

BZX55C4V7

BZX55C2V7

BZX55C5V1

BZX55C3V0

BZX55C3V3

BZX55C5V6

BZX55C3V6

BZX55C6V2

BZX55C3V9

BZX55C6V8

BZX55C7V5

BZX55C8V2

BZX55C9V1

BZX55C10

BZX55C11

BZX55C12

BZX55C13

BZX55C15

BZX55C16

BZX55C18

BZX55C20

BZX55C22

BZX55C24

BZX55C27

BZX55C30

BZX55C33

BZX55C36

BZX55C39

BZX55C43

BZX55C47

BZX55C51

43

47

51

5.0

2.5

85

90

80

60

40

10

8

7

10

15

20

26

30

40

50

55

80

90

110

125

0.25

50

10

4.0

2.0

1.0

0.5

0.1

1.0

2.0

3.0

5.0

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

600

550

450

200

150

50

70

90

110

170

220

500

600

700

0.50

33

36

39

Formosa MS

BZX55C2V4 THRU BZX55C100

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Zener Diode

BZX55C4V3

BZX55C2V4

BZX55C4V7

BZX55C2V7

BZX55C5V1

BZX55C3V0

BZX55C3V3

BZX55C5V6

BZX55C3V6

BZX55C6V2

BZX55C3V9

BZX55C6V8

BZX55C7V5

BZX55C8V2

BZX55C9V1

BZX55C10

BZX55C11

BZX55C12

BZX55C13

BZX55C15

BZX55C16

BZX55C18

BZX55C20

BZX55C22

BZX55C24

BZX55C27

BZX55C30

BZX55C33

BZX55C36

BZX55C39

BZX55C43

BZX55C47

BZX55C51

56

62

68

BZX55C56

BZX55C62

BZX55C68

BZX55C75

BZX55C82

BZX55C91

75

82

91

2.5

1.0

135

150

200

250

300

450

0.50

0.1

43

47

51

1000

1500

2000

5000

0.50

0.10

56

62

68

BZX55C56

BZX55C62

BZX55C68

BZX55C75

BZX55C82

BZX55C91

Note : 5% tolerance of Zener voltage

BZX55C100 100 1.0 450 0.15000 0.10 75

BZX55C100

mA(Ω)Max (Ω)Max (uA)Max

DS-222713 2008/02/10 2010/03/10 B 8

Zener

voltage

Max.

Nom.

V @ I (Volts)

Z ZT

Min.

3.14

2.28

3.42

3.71

4.09

2.57

4.47

2.85

4.85

5.32

5.89

6.46

7.13

7.79

8.65

9.50

10.45

11.40

12.35

14.25

15.20

17.10

19.00

20.90

22.80

25.65

28.50

31.35

34.20

37.05

40.85

44.65

48.45

53.20

58.90

64.60

71.25

77.90

86.45

95.00

3.47

2.52

3.78

4.10

4.52

2.84

4.94

3.15

5.36

5.88

6.51

7.14

7.88

8.61

9.56

10.50

11.55

12.60

13.65

15.75

16.80

18.90

21.00

23.10

25.20

28.35

31.50

34.65

37.80

40.95

45.15

49.35

53.55

58.80

65.10

71.40

78.75

86.10

95.55

105.0

Page 4

TOTAL POWER DISSIPATION (mW)

RELATIVE VOLTAGE CHANGE

DIODE CAPACITANCE (pF)

VOLTAGE CHANGE (mV)

-4

TEMPERATURE COEFFICIENT (10 / K)

o

AMBIENT TEMPERATURE ( C)

o

JUNCTION TEMPERATURE ( C)

ZENER VOLTAGE (V)

FIG.1-TOTAL POWER DISSIPATION VS.

AMBIENT TEMPERATURE

FIG. 3-TYPICAL CHANGE OF WORKING VOLTAGE

VS. JUNCTION TEMPERATURE

FIG. 2-TYPICAL CHANGE OF WORKING VOLTAGE

o

UNDER OPERATING CONDITIONS AT T =25 C

A

FIG. 4-TEMPERATURE COEFFICIENT OF VZ

VS. Z-VOLTAGE

FIG. 5-DIODE CAPACITANCE VS. Z-VOLTAGE

0

100

200

300

400

500

600

40 80 120 160 200 0

0

10

100

1000

5 10 15 20 25

-60

0.8

0

0.9

60

1.0

120

1.1

180

1.2

240

1.3

0

-5

0

5

10

15

10 20 30 40 50

50

100

150

200

5 10 15 20 25

-4

8 x 10 /K

I = 5mA

Z

I = 5mA

Z

-4

10 x 10 /K

-4

-4 x 10 /K

-4

-2 x 10 /K

0

-4

2 x 10 /K

-4

4 x 10 /K

-4

6 x 10 /K

Rating and characteristic curves (BZX55C2V4 THRU BZX55C100)

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

DS-222713 2008/02/10 2010/03/10 B 8

Page 5

ZENER CURRENT (mA)

THERMAL RESISTANCE FOR PULSE Cond. (K/W)

DIFFERENTIAL Z-RESISTANCE (ohm)

FORWARD CURRENT (mA)

ZENER CURRENT (mA)

ZENER VOLTAGE (V)

FORWARD VOLTAGE (V)

PULSE LENGTH (mS)

ZENER VOLTAGE (V)

FIG. 6-FORWARD CURRENT

VS. FORWARD VOLTAGE

FIG. 8-Z-CURRENT VS. Z-VOLTAGE

FIG. 10-THERMAL RESPONSE

FIG. 7-Z-CURRENT VS. Z-VOLTAGE

FIG. 9-DIFFERENTIAL Z-RESISTANCE VS. Z-VOLTAGE

0

0.001

15

0

0.1

1

0

1

0.01

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0

10

20

30

40

50

20 25 30 35

10

100

1000

5 10 15 20 25

20

40

60

80

100

4 8 12 16 20

10

100

1000

1 10 100 1000

I = 1mA

Z

I = 5mA

Z

I = 10mA

Z

t / T= 0.05

p

t / T= 0.1

p

t / T= 0.2

p

t / T= 0.5

p

Single Pulse

t / T= 0.01

p

t / T= 0.02

p

P = 500mW

tot

P = 500mW

tot

Rating and characteristic curves (BZX55C2V4 THRU BZX55C100)

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

DS-222713 2008/02/10 2010/03/10 B 8

Page 6

Formosa MS

BZX55C2V4 THRU BZX55C100

Pinning information

12

Pin1 cathode

Pin2 anode

Pin Simplified outline Symbol

Taping & bulk specifications for AXIAL devices

52.4mm/ 26.2mm

A

OFF Center

both sids

1.0mm

6.3mm Max OFF

Alignment

1.2mm

72mm DIA.

355mm

17mm DIA. 55mm Max.

17mm DIA.

71mm Max.

2

1

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Zener Diode

REEL PACKING

5,000 5 mm 360 * 340 * 370 20,000 7.3

AMMO PACKING

DO-35G/52mm 5,000 250 *7 8 *78 420 * 270 * 330 100,000 15.0

DO-35G/26mm 5,000 250 * 78 *48 420 * 270 * 330 150,000 16.7

DO-35G/52mm

DEVICE

CASE

TYPE

Q'TY 1

(PCS / REEL)

COMPONENT

SPACING

"A" in FIG. A

CARTON

SIZE

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

(m/m)

DEVICE

CASE

TYPE

Q'TY 1

(PCS / BOX)

INNER

BOX SIZE

CARTON

SIZE

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

(m/m)(m/m)

DS-222713 2008/02/10 2010/03/10 B 8

Page 7

Formosa MS

BZX55C2V4 THRU BZX55C100

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Zener Diode

BULK PACKING

DO-35G 2,000 96 * 80 * 42 410 * 335 * 265 120,000 17.4

DEVICE

CASE

TYPE

Q'TY 1

(PCS / BOX)

INNER

BOX SIZE

CARTON

SIZE

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

(m/m)(m/m)

Suggested thermal profiles for soldering processes

Temperature(°C)

1.Lead free temperature profile wave-soldering

0 20 40 60 80 100 120 140 160 180 200 220 240

Time(Sec)

0

20

40

60

80

100

120

140

160

180

200

220

240

260

280

Preheat

Max gradient 2ºC/s

Peak

Max well

time 5 Max

Cool Down

Max gradient-4ºC/s

Suggested gradient 2ºC/s or

less

-

Peak soldering temperature not

to exceed 260ºC

DS-222713 2008/02/10 2010/03/10 B 8

Page 8

Formosa MS

BZX55C2V4 THRU BZX55C100

Document ID Issued Date Revised Date Revision Page.

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Zener Diode

Item Test Conditions Reference

High reliability test capabilities

1. Solder Resistance

2. Solderability

3. Pull Test

4. Bend Lead

5. High Temperature Reverse Bias

6. Pressure Cooker

7. Temperature Cycling

8. Thermal Shock

9. Humidity

10. High Temperature Storage Life

at 260±5 for 10±2sec.

immerse body into solder 1/16"±1/32"

o

at 245±5 C for 5 sec.

0.25kg in axial lead direction for 10 sec.

0.25kg weight applied to each lead bending

o o

arc 90 ±5 for 3 times.

o

V =80% rate at T =150 C for 168 hrs.

R J

o

15P at T =121 C for 4 hrs.

SIG A

o o

-55 C to +125 C dwelled for 30 min.

and transferred for 5min. total 10 cycles.

o o

0 C for 5 min. rise to 100 C for 5 min. total 10 cycles.

o

at T =85 C, RH=85% for 1000hrs.

A

o

at 175 C for 1000 hrs.

oCMIL-STD-750D

METHOD-2031

MIL-STD-202F

METHOD-208

MIL-STD-750D

METHOD-2036

MIL-STD-750D

METHOD-2036

MIL-STD-750D

METHOD-1038

JESD22-A102

MIL-STD-750D

METHOD-1051

MIL-STD-750D

METHOD-1056

MIL-STD-750D

METHOD-1021

MIL-STD-750D

METHOD-1031

Item Test Conditions Reference

DS-222713 2008/02/10 2010/03/10 B 8