Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS -100V
▼ Simple Drive Requirement RDS(ON) 180mΩ
▼ Fast Switching Characteristic ID-12A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice 1
AP18P10GH/J
Rating
-100
±20
-12
RoHS-compliant Product
Continuous Drain Current, VGS @ 10V -10
Pulsed Drain Current1-48
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
200810162
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-55 to 150
35.7
-55 to 150
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. GDSTO-252(H)
GDSTO-251(J)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
AP18P10GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-8A - - 180 mΩ
VGS=-4.5V, ID=-6A - - 210 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS= -10V, ID= -8A - 8 - S
IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=-80V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
QgTotal Gate Charge2ID=-8A - 16 25.6 nC
Qgs Gate-Source Charge VDS=-80V - 4.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.7 - nC
td(on) Turn-on Delay Time2VDS=-50V - 9 - ns
trRise Time ID=-8A - 14 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 45 - ns
tfFall Time RD=6.25Ω-40-ns
Ciss Input Capacitance VGS=0V - 1590 2550 pF
Coss Output Capacitance VDS=-25V - 110 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF
RgGate Resistance f=1.0MHz - 8 12 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-12A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-8A, VGS=0V, - 49 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 110 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
120
150
180
210
240
270
300
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-8A
TC=25
℃
0
10
20
30
40
0 4 8 12 16 20
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
-7.0V
-5.0V
-4.5V
VG= -3.0 V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -12A
VG= -10V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
5
10
15
20
0246810
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
T
C
=150 o
C
-10V
-7.0V
-5.0V
-4.5V
VG= -3.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP18P10GH/J
Q
VG
-4.5V
QGS QGD
QG
Charge
0
3
6
9
12
15
0 10203040
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS = -80V
ID= -8A
10
100
1000
10000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0
2.5
5
7.5
10
12.5
15
0246
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS = -5V
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
18P10GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
meet Rohs requirement
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e---- 2.30 ----
F 5.88 6.84 7.80
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
18P10GJ
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
meet Rohs requirement
for low voltage MOSFET only
6
