990408TM2fXHD
Absolute Maximum Ratings/Ta=25°C
Electrical Specifications/Ta=+25°C , Vcc=3.0V , ZL=Zs=50Ω
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
TENTATIVE
SMA3006
Supply Voltage
Supply Current
Maximum Power Dissipation
Storage Temperature
RF Input Power
Vcc
Icc
PD
Tstg
Pin
4.0
10
50
–55 to +150
0
V
mA
mW
°C
dBm
Units
Silicon Wide-band Amplifier MMIC
Specifications and information herin are subject to change without notice.
Parameters Symbol Absolute Maximum
Parameters Symbol Units
Test Conditions MIN. TYP. MAX.
Supply Current
Power Gain
Noise Figure
Maximum Operation Frequency
Isolation
Input Return Loss
Output Return Loss
Icc
Gp
NF
fu
ISL
RLin
RLout
without input signal
f=800MHz
f=800MHz
–3dB from 0.1GHz gain
f=800MHz
f=800MHz
f=800MHz.
2
14
1.5
21
10
7
3.5
16
4.3
2.0
26
13
10
5
18
5.0
mA
dB
dB
GHz
dB
dB
dB
Additional Application Information/Ta=+25°C , ZL=Zs=50Ω
Parameters Symbol Units
Test Conditions TYP.
Power Gain
Noise Figure
Isolation
Input Return Loss
Output Return Loss
Gp
NF
ISL
RLin
RLout
Vcc=3V, f=1GHz
Vcc=3V, f=1.5GHz
Vcc=3V, f=1GHz
Vcc=3V, f=1.5GHz
Vcc=3V, f=1GHz
Vcc=3V, f=1.5GHz
Vcc=3V, f=1GHz
Vcc=3V, f=1.5GHz
Vcc=3V, f=1GHz
Vcc=3V, f=1.5GHz
16
16
4.5
4.7
23
23
13
11
11
12
dB
dB
dB
dB
dB
Parameters Symbol UnitsMIN. TYP. MAX.
Supply Voltage Vcc
Tj
2.7
–40
3.0
+25
3.3
+85
V
°C
Recommended operation range
Operating Junction
Temperature
981211TM2fXHD-2/2
SMA3006
Package Dimensions
0.65 0.65
1.3
2.0
2.1
1.25
0.15
0 to 0.1
0.7
0.9
123
4
5
6
1 : GND
2 : GND
3 : RF IN
4 : Vcc
5 : GND
6 : RF OUT
MCP6(unit:mm)
1000pF RF
OUTPUT
Vcc
1000pF
1000pF
RF
INPUT
1
2
3
6
5
4
Test Circuit
C
1
2
3
456
50Ω
50Ω
RF INPUT
RF OUTPUT
Vcc
RF Layout
Gp - f
Power Gain Gp[dB]
Freqency f [GHz]
0.01 0.1 1
10
20
30
0
Vcc=3.0V
Vcc=2.5V
Output Power vs. Input Power and Voltage
Output Power Po (dBm)
Input Power Pin (dBm)
–30
–20
–10
0
–40
–50 –40 –30 –20 –10 0 10
Vcc=2.5V
Vcc=3V
Vcc
RF
OUTPUT
RF
INPUT
Equivalent Circuit
